Trap distribution in TlInS2 layered crystals from thermally stimulated current measurements

Date

2008-02-01

Author

IŞIK, MEHMET
Goksen, K.
Hasanlı, Nızamı
Ozkan, H.

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We have carried out thermally stimulated current (TSC) measurements with the current flowing along the layer on as-grown TlInS2 layered single crystals in the low temperature range 10 - 110 K with different heating rates of 0.1 - 1.5 K/s. Experimental evidence was found for the presence of two shallow electron trapping centers with activation energies of 12 and 14 meV. Their capture cross sections have been determined as 2.2 x 10(-23) and 7.1 x 10(-25) cm(2), respectively. It was concluded that retrapping in these centers is negligible, which was confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumed slow retrapping. An exponential distribution of electron traps was revealed from the analysis of the TSC data obtained at different light excitation temperatures. This experimental technique provided a value of 27 meV/decade for the trap distribution. The parameters of the monoclinic unit cell were determined by studying the X-ray powder diffraction.

Subject Keywords

General Physics and Astronomy

URI

https://hdl.handle.net/11511/36225

Journal

JOURNAL OF THE KOREAN PHYSICAL SOCIETY

DOI

https://doi.org/10.3938/jkps.52.367

Collections

Department of Physics, Article

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Trapping center parameters in TlInS2 layered crystals by thermally stimulated current measurements Yuksek, NS; Hasanlı, Nızamı; Ozkan, H; Karci, O (Institute of Physics, Polish Academy of Sciences, 2004-07-01) Thermally stimulated current measurements are carried out on TlInS2 layered single crystal with the current flowing perpendicular to the c-axis in the temperature range of 10 to 90 K. The results are analyzed according to various methods, such as curve fitting, heating rate, and initial rise methods, which seem to be in good agreement with each other. Experimental evidence is found for one trapping center in TlInS2 crystal in the low-temperature region.
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Citation Formats

M. IŞIK, K. Goksen, N. Hasanlı, and H. Ozkan, “Trap distribution in TlInS2 layered crystals from thermally stimulated current measurements,” JOURNAL OF THE KOREAN PHYSICAL SOCIETY, pp. 367–373, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36225.