Trap distribution in TlInS2 layered crystals from thermally stimulated current measurements

Goksen, K.
Hasanlı, Nızamı
Ozkan, H.
We have carried out thermally stimulated current (TSC) measurements with the current flowing along the layer on as-grown TlInS2 layered single crystals in the low temperature range 10 - 110 K with different heating rates of 0.1 - 1.5 K/s. Experimental evidence was found for the presence of two shallow electron trapping centers with activation energies of 12 and 14 meV. Their capture cross sections have been determined as 2.2 x 10(-23) and 7.1 x 10(-25) cm(2), respectively. It was concluded that retrapping in these centers is negligible, which was confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumed slow retrapping. An exponential distribution of electron traps was revealed from the analysis of the TSC data obtained at different light excitation temperatures. This experimental technique provided a value of 27 meV/decade for the trap distribution. The parameters of the monoclinic unit cell were determined by studying the X-ray powder diffraction.


Trapping center parameters in TlInS2 layered crystals by thermally stimulated current measurements
Yuksek, NS; Hasanlı, Nızamı; Ozkan, H; Karci, O (Institute of Physics, Polish Academy of Sciences, 2004-07-01)
Thermally stimulated current measurements are carried out on TlInS2 layered single crystal with the current flowing perpendicular to the c-axis in the temperature range of 10 to 90 K. The results are analyzed according to various methods, such as curve fitting, heating rate, and initial rise methods, which seem to be in good agreement with each other. Experimental evidence is found for one trapping center in TlInS2 crystal in the low-temperature region.
Trapping center parameters and optical absorption in. quaternary TI4In3GaS8, Tl4InGa3Se8,and Tl2InGaS4 semiconductors
Hasanlı, Nızamı (Korean Physical Society, 2007-04-01)
We have carried out thermally stimulated current measurements on as-grown Tl(4)ln(3)GaS(8), Tl4InGa3Se8, and Tl2InGaS4 crystals in the low-temperature ranges of 10 - 90, 10 - 160, and 10 - 60 K, respectively. Using the different heating rates method, we revealed experimental evidence for trapping centers with activation energies of 12 meV (Tl4In3GaS8), 17 meV (Tl(4)lnGa(3)Se(8)), and 10 meV (Tl(2)lnGaS(4)). The capture cross sections of the traps were found to be 3.0 x 10(-25), 2.0 x 10(-26), and 1.3 x 10(-...
Excitation intensity- and temperature-dependent photoluminescence in layered structured Tl2GaInSe2S2 crystals
Hasanlı, Nızamı (AIP Publishing, 2013-02-21)
Photoluminescence spectra of Tl2GaInSe2S2 layered crystals have been registered in the temperature range of 17-62 K and in the wavelength region of 525-690 nm. A broad visible photoluminescence band centered at 590 nm (2.10 eV) was observed at T 17 K. Variation of emission band has been studied as a function of laser excitation intensity in the 0.1-55.7 mW cm(-2) range. The analysis of the spectra reveals that the peak energy position changes with excitation intensity (blue shift). The radiative transitions...
Optical properties of TlGa(SxSe1-x) 2 layered mixed crystals (0=x=1): Absorption edge and photoluminescence study at T=10 K
Hasanlı, Nızamı (Springer Science and Business Media LLC, 2018-09-01)
Transmittance measurements of layered mixed crystals were performed in the 1.80-2.80 eV photon energy range at . Band-gap energies of the studied crystals were estimated by means of the derivative spectra of transmittance and photon energy dependence of absorption coefficient. The compositional dependence of direct band-gap energy at revealed that as sulphur (selenium) composition is increased (decreased) in the mixed crystals, the direct band-gap energy increases from 2.19 eV () to 2.67 eV (). Photolumines...
Analysis of Thermoluminescence Glow Peaks in beta-Irradiated TlGaSeS Crystals
IŞIK, MEHMET; YILDIRIM, TACETTİN; Gasanly, N. M. (Institute of Physics, Polish Academy of Sciences, 2016-06-01)
Thermoluminescence properties of TlGaSeS layered single crystals were investigated in the temperature range of 280-720 K. Thermoluminescence glow curve exhibited three peaks with maximum temperatures of approximate to 370, 437, and 490 K. Curve fitting, initial rise and peak shape methods were used to determine the activation energies of the trapping centers. All applied methods resulted with energies around 0.82, 0.91, and 0.99 eV. Dose dependence of the thermoluminescence intensity was also examined for t...
Citation Formats
M. IŞIK, K. Goksen, N. Hasanlı, and H. Ozkan, “Trap distribution in TlInS2 layered crystals from thermally stimulated current measurements,” JOURNAL OF THE KOREAN PHYSICAL SOCIETY, pp. 367–373, 2008, Accessed: 00, 2020. [Online]. Available: