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Trapping center parameters in TlInS2 layered crystals by thermally stimulated current measurements

Yuksek, NS
Hasanlı, Nızamı
Ozkan, H
Karci, O
Thermally stimulated current measurements are carried out on TlInS2 layered single crystal with the current flowing perpendicular to the c-axis in the temperature range of 10 to 90 K. The results are analyzed according to various methods, such as curve fitting, heating rate, and initial rise methods, which seem to be in good agreement with each other. Experimental evidence is found for one trapping center in TlInS2 crystal in the low-temperature region.