Thermal lattice scattering mobility and carrier effective mass in intrinsic Tl2InGaTe4 single crystals

Date

2007-04-18

Author

Qasrawi, A. F.
Hasanlı, Nızamı

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Systematic structural, dark electrical resistivity and Hall coefficient measurements have been carried out on n- type Tl2InGaTe4 single crystals. The data from x- ray powder diffraction allowed determination of the tetragonal unit cell lattice parameters. Analysis of the electrical resistivity and carrier concentration, which was recorded in the temperature range 210 - 350 K, reveals the intrinsic type of conduction with an average energy band gap of 0.85 eV. The temperature- dependent Hall mobility was observed to follow the mu alpha T-3/2 law and was analysed assuming the domination of acoustic phonons scattering. The experimental Hall mobility data for Tl2InGaTe4 crystals agrees with the theoretical acoustic phonon scattering mobility data with an acoustic deformation potential of 7.6 eV.

Subject Keywords

General Materials Science, Condensed Matter Physics

URI

https://hdl.handle.net/11511/36176

Journal

JOURNAL OF PHYSICS-CONDENSED MATTER

DOI

https://doi.org/10.1088/0953-8984/19/15/156206

Collections

Department of Physics, Article

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Citation Formats

A. F. Qasrawi and N. Hasanlı, “Thermal lattice scattering mobility and carrier effective mass in intrinsic Tl2InGaTe4 single crystals,” JOURNAL OF PHYSICS-CONDENSED MATTER, pp. 0–0, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36176.