Thermal lattice scattering mobility and carrier effective mass in intrinsic Tl2InGaTe4 single crystals

Qasrawi, A. F.
Hasanlı, Nızamı
Systematic structural, dark electrical resistivity and Hall coefficient measurements have been carried out on n- type Tl2InGaTe4 single crystals. The data from x- ray powder diffraction allowed determination of the tetragonal unit cell lattice parameters. Analysis of the electrical resistivity and carrier concentration, which was recorded in the temperature range 210 - 350 K, reveals the intrinsic type of conduction with an average energy band gap of 0.85 eV. The temperature- dependent Hall mobility was observed to follow the mu alpha T-3/2 law and was analysed assuming the domination of acoustic phonons scattering. The experimental Hall mobility data for Tl2InGaTe4 crystals agrees with the theoretical acoustic phonon scattering mobility data with an acoustic deformation potential of 7.6 eV.


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Transmission and reflection measurements on GaSxSe1-x mixed crystals (0 <= x <= 1) were carried out in the 400-1000 nm spectral range. Band gap energies of the studied crystals were obtained using the derivative spectra of transmittance and reflectance. The compositional dependence of band gap energy revealed that as sulfur (selenium) composition is increased (decreased) in the mixed crystals, band gap energy increases quadratically from 1.99 eV (GaSe) to 2.55 eV (GaS). Spectral dependencies of refractive i...
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Bed-to-surface heat transfer experiments from a vertically submerged cylindrical surface were conducted in laboratory-scale (D-c = 25 cm) conical spouted and spout-fluid beds at two different conical angles (31 degrees and 66 degrees) in the high particle density range (2500 kg/m(3) <= sigma(p) <= 6000 kg/m(3)). The effects of the bed design parameters (conical angle and inlet diameter of spouting gas entrance) and operating conditions (static bed height, particle size, density, and spouting and fluidizatio...
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YILDIRIM, TACETTİN; Hasanlı, Nızamı (Elsevier BV, 2009-11-15)
Thermally stimulated current (TSC) measurements were carried out in as-grown TlGaSeS layered single crystals. The investigations were performed in temperatures ranging from 10 to 160 K with heating rate of 0.8 K s(-1). The analysis of the data revealed three electron trap levels at 13, 20 and 50 meV The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 3.3 x 10(-24), 1.0 x 10(-24), and 11 x 10(-24)...
Electrical conductivity and Hall mobility in p-type TlGaSe2 crystals
Qasrawi, AF; Hasanlı, Nızamı (Elsevier BV, 2004-07-02)
Systematic dark electrical conductivity and Hall mobility measurements have been carried out in the temperature range of 200-350 K on p-type TlGaSe2 crystals. The analysis of the temperature-dependent electrical conductivity and carrier concentration reveals the extrinsic type of conduction with an acceptor impurity level located at 0.33 eV, and donor and acceptor concentrations of 9.0 x 10(15) and 1.3 x 10(16) cm(-3), respectively. A hole and electron effective masses of 0.520m(0) and 0.325m(0), respective...
Optoelectronic properties of Tl3InSe4 single crystals
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Informa UK Limited, 2010-01-01)
The crystal structure, temperature-dependent electrical conductivity, Hall coefficient, current-voltage characteristics, absorption spectra and temperature- and illumination-dependent photoconductivity of Tl3InSe4 single crystals were investigated. Tl3InSe4 crystallises in a body-centred lattice with tetragonal symmetry and belongs to the space group [image omitted]. The crystals are extrinsic p-type semiconductors and exhibit a conductivity conversion from p- to n-type at a critical temperature, Tc, of 283...
Citation Formats
A. F. Qasrawi and N. Hasanlı, “Thermal lattice scattering mobility and carrier effective mass in intrinsic Tl2InGaTe4 single crystals,” JOURNAL OF PHYSICS-CONDENSED MATTER, pp. 0–0, 2007, Accessed: 00, 2020. [Online]. Available: