Show/Hide Menu
Hide/Show Apps
anonymousUser
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Frequently Asked Questions
Frequently Asked Questions
Communities & Collections
Communities & Collections
Ge nanocrystals embedded in SiO2 in MOS based radiation sensors
Download
index.pdf
Date
2010-11-15
Author
AKTAĞ, ALİEKBER
YILMAZ, ERCAN
Mogaddam, Nader A. P.
AYGÜN ÖZYÜZER, GÜLNUR
Cantas, Ayten
Turan, Raşit
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
5
views
7
downloads
In this work the effects of gamma radiation on the Raman spectra of Ge nanocrystals embedded in SiO2 have been investigated SiO2 films containing nanoparticles of Ge were grown using the r f -magnetron sputtering technique Formation of Ge nanocrystals was observed after high temperature annealing in an inert atmosphere and confirmed by Raman measurements The intensity of the Raman signal originating from Ge nanocrystals was found to decrease with increasing gamma radiation The study also includes the gamma radiation effects on MOS structure with Ge nanocrystals embedded in SiO2 The gamma radiation effects from 500 up to 4000 Gray were investigated Capacitance-voltage measurements were performed and analyzed Oxide traps and interface trap charges were calculated Results show that MOS structure with Ge nanocrystals embedded in SiO2 is a good candidate to be used in radiation sensors especially at high radiation doses (C) 2010 Elsevier B V All rights reserved
Subject Keywords
Nuclear and High Energy Physics
,
Instrumentation
URI
https://hdl.handle.net/11511/36446
Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
DOI
https://doi.org/10.1016/j.nimb.2010.09.007
Collections
Department of Physics, Article