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Ion beam synthesis and characterization of Ge nanoparticles in SiO2
Date
2006-08-01
Author
Desnica, U. V.
Buljan, M.
Dubcek, P.
Siketic, Z.
Radovic, I. Bogdanovic
Bernstorff, S.
Serincan, U.
Turan, Raşit
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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Ge quantum dots embedded in SiO2 have been obtained by implantation of Ge ions in the 10(16)-10(17) cm(-2) dose range, followed by post-implantation annealing in the temperature range T-a = 300-1000 degrees C. Using Rutherford back-scattering, grazing incidence X-ray diffraction and grazing incidence small angle X-ray scattering it was found that Ge-QDs are synthesized as discrete, spherical QDs, with radius ranging from 1.7 to 10 nm, depending on dose and T-a. For T-a above 800 degrees C the Ge atom diffusion becomes considerable, leading to a strong increase of both size and size distribution of Ge QDs, but still without sizeable loss of Ge atoms from the implanted layer.
Subject Keywords
Nuclear and High Energy Physics
,
Instrumentation
URI
https://hdl.handle.net/11511/42144
Journal
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
DOI
https://doi.org/10.1016/j.nimb.2006.03.151
Collections
Department of Physics, Article