Ion beam synthesis and characterization of Ge nanoparticles in SiO2

Desnica, U. V.
Buljan, M.
Dubcek, P.
Siketic, Z.
Radovic, I. Bogdanovic
Bernstorff, S.
Serincan, U.
Turan, Raşit
Ge quantum dots embedded in SiO2 have been obtained by implantation of Ge ions in the 10(16)-10(17) cm(-2) dose range, followed by post-implantation annealing in the temperature range T-a = 300-1000 degrees C. Using Rutherford back-scattering, grazing incidence X-ray diffraction and grazing incidence small angle X-ray scattering it was found that Ge-QDs are synthesized as discrete, spherical QDs, with radius ranging from 1.7 to 10 nm, depending on dose and T-a. For T-a above 800 degrees C the Ge atom diffusion becomes considerable, leading to a strong increase of both size and size distribution of Ge QDs, but still without sizeable loss of Ge atoms from the implanted layer.

Citation Formats
U. V. Desnica et al., “Ion beam synthesis and characterization of Ge nanoparticles in SiO2,” NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, vol. 249, pp. 843–846, 2006, Accessed: 00, 2020. [Online]. Available: