An Advanced Presence Detection System Using the CMOS Infrared (CIR) Technology

2017-04-13
Arslan, Tugay
Cilbir, Gorkem
Tepegoz, Murat
Akın, Tayfun
This paper presents the development of advanced presence detection system using the CMOS infrared (CIR) technology. The recent advancements on microbolometer type uncooled LWIR imaging sensor technology allowed to reduce the fabrication cost of the microbolometer type detectors and the overall wafer cost and therefore to increase the use of this technology in a number of emerging applications, including various consumer applications and advance presence detection systems for smart buildings and smart offices. Such applications require even lower cost detectors, which can be achieved with a recently introduced CMOS infrared (CIR) technology that enables the mass fabrication of microbolometer type sensors in almost any CMOS foundries without additional equipment investment. This paper introduces an advanced presence detection system which uses an LWIR microbolometer type sensor fabricated using the CIR technology. The advanced presence detection (APD) system can provide 80x80 infrared video together with the temperature map of the scene where the sensor can collect LWIR radiation using 120 degrees wide FOV lens. The embedded microprocessor can process the infrared video and provide real time number of people data as output. The APD system can both provide SPI interface for OEM developers and USB interface for fast evaluation and prototyping.

Suggestions

An 80x80 Microbolometer Type Thermal Imaging Sensor using the LWIR-Band CMOS Infrared (CIR) Technology
Tankut, Firat; Cologlu, Mustafa H.; Askar, Hidir; Ozturk, Hande; Dumanli, Hilal K.; Oruc, Feyza; Tilkioglu, Bilge; Ugur, Beril; Akar, Orhan Sevket; Tepegoz, Murat; Akın, Tayfun (2017-04-13)
This paper introduces an 80x80 microbolometer array with a 35 mu m pixel pitch operating in the 8-12 aem wavelength range, where the detector is fabricated with the LWIR-band CMOS infrared technology, shortly named as CIR, which is a novel microbolometer implementation technique developed to reduce the detector cost in order to enable the use of microbolometer type sensors in high volume markets, such as the consumer market and IoT. Unlike the widely used conventional surface micromachined microbolometer ap...
A Miniature Low-Cost LWIR Camera with a 160x120 Microbolometer FPA
Tepegoz, Murat; Kucukkomurler, Alper; Tankut, Firat; Eminoglu, Selim; Akın, Tayfun (2014-05-08)
This paper presents the development of a miniature LWIR thermal camera, MSE070D, which targets value performance infrared imaging applications, where a 160x120 CMOS-based microbolometer FPA is utilized. MSE070D features a universal USB interface that can communicate with computers and some particular mobile devices in the market. In addition, it offers high flexibility and mobility with the help of its USB powered nature, eliminating the need for any external power source, thanks to its low-power requiremen...
A 160×120 LWIR-band CMOS infrared (CIR) microbolometer
Tankut, Firat; Cologlu, Mustafa H.; Ozturk, Hande; Cilbir, Gorkem; Akar, Orhan S.; Akın, Tayfun (2019-01-01)
This paper introduces a 160x120 CMOS-based microbolometer array with a 35 mu m pixel pitch operating in the 8-12 mu m wavelength range, where the detector is fabricated with the LWIR-band CMOS infrared technology, shortly named as CIR, which is a patented novel approach that allows implementing microbolometers with standard CMOS and simple post-CMOS MEMS processes. Post-CMOS processes require only one mask lithography process and simple subtractive etching steps to obtain suspended microbolometer pixels, as...
A low-cost small pixel uncooled infrared detector for large focal plane arrays using a standard CMOS process
Eminoglu, S; Tanrikulu, MY; Tezcan, DS; Akın, Tayfun (2002-04-03)
This paper reports the development of a low-cost, small pixel uncooled infrared detector using a standard CMOS process. The detector is based on a suspended and thermally isolated p(+)-active/n-well diode whose forward voltage changes due to an increase in the pixel temperature with absorbed infrared radiation. The detector is obtained with simple post-CMOS etching steps on dies fabricated using a standard n-well CMOS process. The post-CMOS process steps are achieved without needing any deposition or lithog...
A low-cost 128x128 uncooled infrared detector array in CMOS process
Eminoglu, Selim; Tanrikulu, Mahmud Yusuf; Akın, Tayfun (2008-02-01)
This paper discusses the implementation of a low-cost 128 x 128 uncooled infrared microbolometer detector array together with its integrated readout circuit (ROC) using a standard 0.35 mu m n-well CMOS and post-CMOS MEMS processes. The detector array can be created with simple bulk-micromachining processes after the CMOS fabrication, without the need for any complicated lithography or deposition steps. The array detectors are based on suspended p(+)-active/n-well diode microbolometers with a pixel size of 4...
Citation Formats
T. Arslan, G. Cilbir, M. Tepegoz, and T. Akın, “An Advanced Presence Detection System Using the CMOS Infrared (CIR) Technology,” 2017, vol. 10177, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36593.