A 160×120 LWIR-band CMOS infrared (CIR) microbolometer

2019-01-01
Tankut, Firat
Cologlu, Mustafa H.
Ozturk, Hande
Cilbir, Gorkem
Akar, Orhan S.
Akın, Tayfun
This paper introduces a 160x120 CMOS-based microbolometer array with a 35 mu m pixel pitch operating in the 8-12 mu m wavelength range, where the detector is fabricated with the LWIR-band CMOS infrared technology, shortly named as CIR, which is a patented novel approach that allows implementing microbolometers with standard CMOS and simple post-CMOS MEMS processes. Post-CMOS processes require only one mask lithography process and simple subtractive etching steps to obtain suspended microbolometer pixels, as opposed to the 8-15 mask deposition and etching processes in the widely used conventional surface micromachined microbolometer approaches that require the use of special high TCR materials like VOx or a-Si. Needing simple subtractive post-CMOS fabrication steps allows the CIR technology to be carried out in any CMOS and MEMS foundry in a truly fabless fashion, where industrially mature and Au-free wafer level vacuum packaging technologies can also be carried out, leading to cost advantage, simplicity, scalability, and flexibility. The implementation of an 80x80 FPA with 35 mu m pixel pitch, namely MS0835, using the CIR technology was previously demonstrated, where wafer level vacuum packaged sensors with one side AR coating demonstrated to provide an NETD (Noise Equivalent Temperature Difference) values of 112 mK at 4 fps with f/1.1 optics. As a further study, this paper reports the implementation of the 160x120 FPA with a 35 mu m pixel pitch, namely MS1635A using the CIR technology, where a 0.18 mu m CMOS process is used. The sensor has a die size of 9.3 mm x 9.1 mm including the area for wafer level vacuum packaging and dissipates less than 50 mW at 30 fps while operating with 3.3V supply. The fabricated sensor is measured to provide a peak NETD of 161 mK, 117 mK, and 89 mK at 17 fps, 11 fps, and 4 fps, respectively, in a dewar environment with f/1.0 optics, i.e., it demonstrates a good performance for high volume low-cost consumer market applications like advanced presence detection and human counting. The CIR approach of MikroSens is scalable with the used CMOS processes, allowing to reduce the pixel pitch even further while increasing the array size and/or improving the sensor performance if necessary for IoT and various other low-cost, high volume markets.

Suggestions

An 80x80 Microbolometer Type Thermal Imaging Sensor using the LWIR-Band CMOS Infrared (CIR) Technology
Tankut, Firat; Cologlu, Mustafa H.; Askar, Hidir; Ozturk, Hande; Dumanli, Hilal K.; Oruc, Feyza; Tilkioglu, Bilge; Ugur, Beril; Akar, Orhan Sevket; Tepegoz, Murat; Akın, Tayfun (2017-04-13)
This paper introduces an 80x80 microbolometer array with a 35 mu m pixel pitch operating in the 8-12 aem wavelength range, where the detector is fabricated with the LWIR-band CMOS infrared technology, shortly named as CIR, which is a novel microbolometer implementation technique developed to reduce the detector cost in order to enable the use of microbolometer type sensors in high volume markets, such as the consumer market and IoT. Unlike the widely used conventional surface micromachined microbolometer ap...
A low-cost 128x128 uncooled infrared detector array in CMOS process
Eminoglu, Selim; Tanrikulu, Mahmud Yusuf; Akın, Tayfun (2008-02-01)
This paper discusses the implementation of a low-cost 128 x 128 uncooled infrared microbolometer detector array together with its integrated readout circuit (ROC) using a standard 0.35 mu m n-well CMOS and post-CMOS MEMS processes. The detector array can be created with simple bulk-micromachining processes after the CMOS fabrication, without the need for any complicated lithography or deposition steps. The array detectors are based on suspended p(+)-active/n-well diode microbolometers with a pixel size of 4...
An Advanced Presence Detection System Using the CMOS Infrared (CIR) Technology
Arslan, Tugay; Cilbir, Gorkem; Tepegoz, Murat; Akın, Tayfun (2017-04-13)
This paper presents the development of advanced presence detection system using the CMOS infrared (CIR) technology. The recent advancements on microbolometer type uncooled LWIR imaging sensor technology allowed to reduce the fabrication cost of the microbolometer type detectors and the overall wafer cost and therefore to increase the use of this technology in a number of emerging applications, including various consumer applications and advance presence detection systems for smart buildings and smart office...
Low-Cost LWIR-Band CMOS Infrared (CIR) Microbolometers for High Volume Applications
Akın, Tayfun (2020-01-01)
This paper provides an overview of the studies and the current status for the development of a novel, low-cost, and CMOS foundry compatible approach for implementing microbolometers with standard CMOS and simple post-CMOS subtractive MEMS processes. This CMOS infrared detector technology is shortly called as the CMOS IR (CIR) technology, and it can be used to implement Focal Plane Arrays (FPAs) for infrared imaging in the LWIR-band (8-12 mu m wavelength). Post-CMOS processes require only one mask lithograph...
A Miniature Low-Cost LWIR Camera with a 160x120 Microbolometer FPA
Tepegoz, Murat; Kucukkomurler, Alper; Tankut, Firat; Eminoglu, Selim; Akın, Tayfun (2014-05-08)
This paper presents the development of a miniature LWIR thermal camera, MSE070D, which targets value performance infrared imaging applications, where a 160x120 CMOS-based microbolometer FPA is utilized. MSE070D features a universal USB interface that can communicate with computers and some particular mobile devices in the market. In addition, it offers high flexibility and mobility with the help of its USB powered nature, eliminating the need for any external power source, thanks to its low-power requiremen...
Citation Formats
F. Tankut, M. H. Cologlu, H. Ozturk, G. Cilbir, O. S. Akar, and T. Akın, “A 160×120 LWIR-band CMOS infrared (CIR) microbolometer,” 2019, vol. 11002, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42309.