Zinc oxide nanowire networks for macroelectronic devices

Ünalan, Hüsnü Emrah
Zhang, Yan
Hiralal, Pritesh
Dalal, Sharvari
Chu, Daping
Eda, Goki
Teo, K. B. K.
Chhowalla, Manish
Milne, William I.
Amaratunga, Gehan A. J.
Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.

Citation Formats
H. E. Ünalan et al., “Zinc oxide nanowire networks for macroelectronic devices,” APPLIED PHYSICS LETTERS, vol. 94, no. 16, pp. 0–0, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35463.