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Zinc oxide nanowire networks for macroelectronic devices
Date
2009-04-20
Author
Ünalan, Hüsnü Emrah
Hiralal, Pritesh
Dalal, Sharvari
Chu, Daping
Eda, Goki
Teo, K. B. K.
Chhowalla, Manish
Milne, William I.
Amaratunga, Gehan A. J.
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.
Subject Keywords
Physics and Astronomy (miscellaneous)
URI
https://hdl.handle.net/11511/35463
Journal
APPLIED PHYSICS LETTERS
DOI
https://doi.org/10.1063/1.3120561
Collections
Department of Metallurgical and Materials Engineering, Article
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H. E. Ünalan et al., “Zinc oxide nanowire networks for macroelectronic devices,”
APPLIED PHYSICS LETTERS
, pp. 0–0, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35463.