Zinc oxide nanowire networks for macroelectronic devices

Date

2009-04-20

Author

Ünalan, Hüsnü Emrah
Hiralal, Pritesh
Dalal, Sharvari
Chu, Daping
Eda, Goki
Teo, K. B. K.
Chhowalla, Manish
Milne, William I.
Amaratunga, Gehan A. J.

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Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.

Subject Keywords

Physics and Astronomy (miscellaneous)

URI

https://hdl.handle.net/11511/35463

Journal

APPLIED PHYSICS LETTERS

DOI

https://doi.org/10.1063/1.3120561

Collections

Department of Metallurgical and Materials Engineering, Article

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Citation Formats

H. E. Ünalan et al., “Zinc oxide nanowire networks for macroelectronic devices,” APPLIED PHYSICS LETTERS, pp. 0–0, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/35463.