Design and Implementation of an Encapsulated GaN X-Band Power Amplifier Family

Date

2018-11-19

Author

Memioğlu, Onur
Karakuzulu, Alper
Gündel, Adnan
Koçer, Fatih
Aydın Çivi, Hatice Özlem

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This paper describes the design and verification results of two wideband class AB High Power Amplifiers (PA), encapsulated in commercial packages. Both amplifiers designed on WIN Semiconductors' 0.25 mu m GaN on SiC technology. The selected GaN process features compact common-source (CS) transistor layouts with individual source grounding vias. The family spans the whole X-band frequency with the first design tuned between 7-11 GHz and the second design tuned between 10-12 GHz. Both designs have saturated power output greater than 25 W throughout the whole bandwidth with peak power added efficiency at 30%. A multistage power combining matching strategy to achieve a tradeoff in wideband performance and power output is given. In depth discussion of the MMIC design of the PAs is supported by a discussion of the thermal management of the packages, including the PCB design and active cooling methodology, in order to present a fully functional PA family.

Subject Keywords

EM simulation, Thermal analysis, Monolithic microwave integrated circuit (MMIC), Wideband amplifiers, Pseudomorphic high electron mobility transistor (pHEMT), X-Band; high efficiency, Power Amplifier (PA)

URI

https://hdl.handle.net/11511/36811

DOI

https://doi.org/10.23919/eumic.2018.8539902

Conference Name

13th European Microwave Integrated Circuits Conference (EuMIC)

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

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Citation Formats

O. Memioğlu, A. Karakuzulu, A. Gündel, F. Koçer, and H. Ö. Aydın Çivi, “Design and Implementation of an Encapsulated GaN X-Band Power Amplifier Family,” presented at the 13th European Microwave Integrated Circuits Conference (EuMIC), Madrid, SPAIN, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36811.