Design and characterization of TlInSe2 varactor devices

Date

2011-07-15

Author

QASRAWI, ATEF FAYEZ HASAN
Aljammal, Faten G.
Taleb, Nisreen M.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

101
views

0
downloads

TlInSe2 single crystal has been successfully prepared by the Bridgman crystal growth technique. The crystal, which exhibits compositional atomic percentages of 25.4%, 25.2% and 49.4% for TI, In and Se, respectively, is found to be of tetragonal structure with lattice parameters of a=0.8035 and c=0.6883 nm. The crystals were used to design radio frequency sensitive varactor device. The temperature dependence of the current-voltage characteristics of the device allowed the calculation of the room temperature barrier height and ideality factor as 0.87 eV and as 3.2, respectively. Rising the device temperature increased the barrier height and decreased the ideality factor. This behavior was attributed to the current transport across the metal-semiconductor interface. The capacitance of the device is observed to increase with increasing voltage and increasing temperature as well. The temperature activation of the capacitance starts above 82 degrees C with a temperature coefficient of capacitance being 1.08 x 10 (3) K (1). Furthermore, the capacitance of the device was observed to increase with increasing frequency up to a maximum critical frequency of 4.0 kHz, after which the capacitance decreased with increasing frequency. The behavior reflected the ability of maximum amount of charge holding being at a 4.0 kHz. The analysis of the capacitance-voltage characteristics at fixed frequencies reflected a frequency dependent barrier height and acceptors density. The decrease in the barrier height and acceptors density with increasing frequency is mainly due to the inability of the free charge to follow the ac signal.

Subject Keywords

Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/36874

Journal

Physica B: Condensed Matter

DOI

https://doi.org/10.1016/j.physb.2011.04.018

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Growth and characterization of Tl3InSe4 single crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Elsevier BV, 2011-06-01) Tl3InSe4 single crystal has been successfully prepared by the Bridgman crystal growth technique. The crystal that is reported for the first time is found to be of tetragonal structure with lattice parameters of a=0.8035 and c=0.6883 nm. The electrical resistivity and Hall effect measurements on the crystal revealed a conductivity type conversion from p- to n-type at a critical temperature of 283 K. The electron to hole mobility ratio is found to be 1.10. The analysis of the temperature-dependent electrical ...
Indium rich InGaN solar cells grown by MOCVD Cakmak, H.; Arslan, Engin; Rudzinski, M.; Demirel, P.; Ünalan, Hüsnü Emrah; Strupinski, W.; Turan, Raşit; ÖZTÜRK, MEHMET AKİF; ÖZBAY, Ekmel (Springer Science and Business Media LLC, 2014-08-01) This study focuses on both epitaxial growths of InxGa1-xN epilayers with graded In content, and the performance of solar cells structures grown on sapphire substrate by using metal organic chemical vapor deposition. The high resolution X-ray and Hall Effect characterization were carried out after epitaxial InGaN solar cell structures growth. The In content of the graded InGaN layer was calculated from the X-ray reciprocal space mapping measurements. Indium contents of the graded InGaN epilayers change from ...
Modeling of Magnetic Properties of Nanocrystalline La-doped Barium Hexaferrite KÜÇÜK, İLKER; Sozeri, Huseyin; Ozkan, Husnu (Springer Science and Business Media LLC, 2011-05-01) In this paper an artificial neural network (ANN) has been developed to compute the magnetization of the pure and La-doped barium ferrite powders synthesized in ammonium nitrate melt. The input parameters were: the Fe/Ba ratio, La content, sintering temperature, HCl washing and applied magnetic field. A total of 8284 input data set from currently measured 35 different samples with different Fe/Ba ratios, La contents and washed or not washed in HCl were available. These data were used in the training set for ...
Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array Korkmaz, Melih; Arikan, Bulent; Suyolcu, Y. Eren; ASLAN, BÜLENT; SERİNCAN, UĞUR (IOP Publishing, 2018-03-01) We report on the growth and opto-electronic characterization of type-II InAs/GaSb superlattice (SL) mid-wavelength infrared pin photodetector grown on a GaAs substrate. AlSb interfacial misfit array was employed at the GaAs buffer/GaSb epilayer interface to reduce the dislocation density of the SL structure grown on the lattice mismatched GaAs substrate. Optical and electrical performance of this sample (SL-GaAs) were then compared with the reference sample of the same structure grown on a GaSb substrate (S...
RAMAN-SPECTROSCOPY OF SOFT AND RIGID MODES IN FERROELECTRIC TLINS2 BURLAKOV, VM; RYABOV, AP; YAKHEEV, MP; VINOGRADOV, EA; MELNIK, NN; Hasanlı, Nızamı (Wiley, 1989-06-01) Low‐frequency Raman spectra of a TlInS2 single crystal in the vicinity of a ferroelectric phase transition are reported. In the ferroelectric phase a soft mode interacting with some rigid modes is observed. The temperature dependence of the soft mode frequency is found to be proportional to (Tc – T)1/2. An unusual behaviour of the rigid mode (ω = 20 cm−1) is observed. This fact is interpreted in terms of inherent lattice defects which cause nonhomogeneous broadening.

Citation Formats

A. F. H. QASRAWI, F. G. Aljammal, N. M. Taleb, and N. Hasanlı, “Design and characterization of TlInSe2 varactor devices,” Physica B: Condensed Matter, pp. 2740–2744, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36874.