Indium rich InGaN solar cells grown by MOCVD

Date

2014-08-01

Author

Cakmak, H.
Arslan, Engin
Rudzinski, M.
Demirel, P.
Ünalan, Hüsnü Emrah
Strupinski, W.
Turan, Raşit
ÖZTÜRK, MEHMET AKİF
ÖZBAY, Ekmel

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This study focuses on both epitaxial growths of InxGa1-xN epilayers with graded In content, and the performance of solar cells structures grown on sapphire substrate by using metal organic chemical vapor deposition. The high resolution X-ray and Hall Effect characterization were carried out after epitaxial InGaN solar cell structures growth. The In content of the graded InGaN layer was calculated from the X-ray reciprocal space mapping measurements. Indium contents of the graded InGaN epilayers change from 8.8 to 7.1 % in Sample A, 15.7-7.1 % in Sample B, and 26.6-15.1 % in Sample C. The current voltage measurements of the solar cell devices were carried out after a standard micro fabrication procedure. Sample B exhibits better performance with a short-circuit current density of 6 mA/cm(2), open-circuit voltage of 0.25 V, fill factor of 39.13 %, and the best efficiency measured under a standard solar simulator with one-sun air mass 1.5 global light sources (100 mW/cm(2)) at room temperature for finished devices was 0.66 %.

Subject Keywords

Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/42040

Journal

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

DOI

https://doi.org/10.1007/s10854-014-2070-4

Collections

Department of Metallurgical and Materials Engineering, Article

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Citation Formats

H. Cakmak et al., “Indium rich InGaN solar cells grown by MOCVD,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, pp. 3652–3658, 2014, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42040.