Indium rich InGaN solar cells grown by MOCVD

Cakmak, H.
Arslan, Engin
Rudzinski, M.
Demirel, P.
Ünalan, Hüsnü Emrah
Strupinski, W.
Turan, Raşit
ÖZBAY, Ekmel
This study focuses on both epitaxial growths of InxGa1-xN epilayers with graded In content, and the performance of solar cells structures grown on sapphire substrate by using metal organic chemical vapor deposition. The high resolution X-ray and Hall Effect characterization were carried out after epitaxial InGaN solar cell structures growth. The In content of the graded InGaN layer was calculated from the X-ray reciprocal space mapping measurements. Indium contents of the graded InGaN epilayers change from 8.8 to 7.1 % in Sample A, 15.7-7.1 % in Sample B, and 26.6-15.1 % in Sample C. The current voltage measurements of the solar cell devices were carried out after a standard micro fabrication procedure. Sample B exhibits better performance with a short-circuit current density of 6 mA/cm(2), open-circuit voltage of 0.25 V, fill factor of 39.13 %, and the best efficiency measured under a standard solar simulator with one-sun air mass 1.5 global light sources (100 mW/cm(2)) at room temperature for finished devices was 0.66 %.

Citation Formats
H. Cakmak et al., “Indium rich InGaN solar cells grown by MOCVD,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, vol. 25, no. 8, pp. 3652–3658, 2014, Accessed: 00, 2020. [Online]. Available: