Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array

Korkmaz, Melih
Arikan, Bulent
Suyolcu, Y. Eren
We report on the growth and opto-electronic characterization of type-II InAs/GaSb superlattice (SL) mid-wavelength infrared pin photodetector grown on a GaAs substrate. AlSb interfacial misfit array was employed at the GaAs buffer/GaSb epilayer interface to reduce the dislocation density of the SL structure grown on the lattice mismatched GaAs substrate. Optical and electrical performance of this sample (SL-GaAs) were then compared with the reference sample of the same structure grown on a GaSb substrate (SL-GaSb). At 80 K, the dark current density and the detectivity values of the pin photodetectors were recorded as 5.40. x. 10-3 A cm-2 and 2.34. x. 1010 cm Hz0.5W(-1) for the SL-GaAs and 9.50. x. 10(-4) A cm(-2) and 4.70. x. 1010 cm Hz0.5W(-1) for the SL-GaSb, respectively.


Direct growth of type II InAs/GaSb superlattice MWIR photodetector on GaAs substrate
SERİNCAN, UĞUR; Arikan, Bulent; Senel, Onur (Elsevier BV, 2018-08-01)
We report on the direct growth and characterization of type-II InAs/GaSb superlattice (T2SL) MWIR photodetector structure grown on a GaAs substrate by molecular beam epitaxy. The designed photodetector structure contains 140 period of 8.0 ML InAs/8.3 ML GaSb p-i-n SL structure with a 50% cutoff wavelength of 3.78 pm. We achieved a peak specific detectivity (D*) and differential resistance area product at zero bias (R(0)A) of 1.3 x 10(12)cm Hz(1/2) W-1 and 10(4) Omega cm(2) at 80 K, respectively. The obtaine...
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Cakmak, H.; Arslan, Engin; Rudzinski, M.; Demirel, P.; Ünalan, Hüsnü Emrah; Strupinski, W.; Turan, Raşit; ÖZTÜRK, MEHMET AKİF; ÖZBAY, Ekmel (Springer Science and Business Media LLC, 2014-08-01)
This study focuses on both epitaxial growths of InxGa1-xN epilayers with graded In content, and the performance of solar cells structures grown on sapphire substrate by using metal organic chemical vapor deposition. The high resolution X-ray and Hall Effect characterization were carried out after epitaxial InGaN solar cell structures growth. The In content of the graded InGaN layer was calculated from the X-ray reciprocal space mapping measurements. Indium contents of the graded InGaN epilayers change from ...
Donor acceptor type neutral state green polymer bearing pyrrole as the donor unit
Celebi, Selin; Balan, Abidin; Epik, Bugra; Baran, Derya; Toppare, Levent Kamil (Elsevier BV, 2009-07-01)
A new neutral state green polymer, poly (2,3-bis(4-tert-butylphenyl)-5,8-di(1H-pyrrol-2-yl) quinoxaline) (PTBPPQ) was synthesized and its potential use as an electrochromic material was investigated. Spectroelectrochemistry studies showed that polymer reveals two distinct absorption bands as expected for a donor-acceptor type polymer, at 408 and 745 nm. In addition, polymer has excellent switching properties with satisfactory optical contrasts and very short switching times. Outstanding optical contrast in ...
High mobility, low voltage operating C-60 based n-type organic field effect transistors
Schwabegger, G.; Ullah, Mujeeb; Irimia-Vladu, M.; Baumgartner, M.; Kanbur, Y.; Ahmed, R.; Stadler, P.; Bauer, S.; Sariciftci, N. S.; Sitter, H. (Elsevier BV, 2011-10-01)
We report on C-60 based organic field effect transistors (OFETs) that are well optimized for low voltage operation. By replacing commonly used dielectric layers by thin parylene films or by utilizing different organic materials like divinyltetramethyldisiloxane-bis(benzocyclo-butene)(BCB), low density polyethylene (PE) or adenine in combination with aluminum oxide (AlOx) to form a bilayer gate dielectric, it was possible to significantly increase the capacitance per unit area (up to two orders of magnitude)...
Assessment of InSb photodetectors on Si substrates
Ozer, S; Beşikci, Cengiz (IOP Publishing, 2003-03-07)
We present the detailed characteristics of small area (33 x 33 mum(2)) InSb photodiodes grown on GaAs coated Si substrates by molecular beam epitaxy. In spite of very large lattice mismatch, 80 K peak detectivity of similar to1 x 10(10) cm Hz(1/2) W-1 has been measured under backside illumination without anti-reflection coating. Differential resistance at 80 K is limited by Ohmic leakage under small reverse bias and trap assisted tunnelling (TAT) under moderately large reverse bias. In the temperature range...
Citation Formats
M. Korkmaz, B. Arikan, Y. E. Suyolcu, B. ASLAN, and U. SERİNCAN, “Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 0–0, 2018, Accessed: 00, 2020. [Online]. Available: