Dependence of energy levels and optical transitions on layer thicknesses in InSe/GaSe superlattices

Date

1998-12-01

Author

Erkoc, S
Katırcıoğlu, Şenay

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

136
views

0
downloads

We have investigated the dependence of energy levels and optical transition matrix elements in InSe/GaSe superlattices on well and/or barrier widths. Self-consistent-field calculations have been performed within the effective-mass theory approximation.

Subject Keywords

Inorganic Chemistry, Materials Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/37413

Journal

JOURNAL OF CRYSTAL GROWTH

DOI

https://doi.org/10.1016/s0022-0248(98)00686-1

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Correlations between the energetics of ZnCd nanoparticles and some of their corresponding bulk properties: molecular-dynamics simulations Amirouche, Lynda; Erkoç, Şakir (Elsevier BV, 2005-02-15) The structural stability of Zn-50, Cd-50, Zn25Cd25, Zn12Cd38, and Zn38Cd12 nanoparticles has been investigated by performing molecular-dynamics computer simulations using a recently developed empirical many-body potential energy function. The most stable structures were found to be compact and three dimensional for both elemental and mixed clusters. An interesting structural feature of the mixed clusters is that Zn and Cd atoms do not mix, especially at proportions around the corresponding alloy eutectic co...
Energy band gap and oscillator parameters of Ga4Se3S single crystals Qasrawi, A. F.; Hasanlı, Nızamı (Elsevier BV, 2007-06-01) The optical properties of the Bridgman method grown Ga4Se3S crystals have been investigated by means of room temperature, transmittance and reflectance spectral analysis. The optical data have revealed an indirect allowed transition band gap of 2.08 eV. The room temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 21.08 and 3.85 eV, 6.48 a...
Thermal activation energy of crystal and amorphous nano-silicon in SiO2 matrix Wang, Jiwei; Righini, Marcofabio; Gnoli, Andrea; Foss, Steinar; Finstad, Terje; Serincan, Ugur; Turan, Raşit (Elsevier BV, 2008-09-01) Temperature and size dependence of photoluminescence (PL) of nano-silicon embedded in SiO2 matrix samples were studied. In these measurements, four samples with deferent implantation dose showed their similar tendency. Their nano-structure was investigated by high resolution electron microscopy (HREM) and selected area diffraction (SAD) which confirmed that only those prepared with the higher Si implantation dose formed crystal nano-silicon. The further analysis of the dependence of thermal activation energ...
Dependence of the photoluminescence of Tl2InGaS4 layered crystal on temperature and excitation intensity Hasanlı, Nızamı; Gurlu, O; Aydinli, A; Yilmaz, I (Elsevier BV, 1998-01-01) The emission band spectra of Tl2InGaS4 layered crystals were investigated in the 10-120 K temperature range and in the 540-860 nm wavelength range using photoluminescence (PL). The peak energy position of the emission band is located at 1.754 eV (707 nm) at 10 K. The emission band has a half-width of 0.28 eV and an asymmetric Gaussian lineshape. The increase of the half-width of the emission band, the blue shift of the emission band peak energy and the quenching of the PL with increasing temperature is expl...
Anisotropic electrical and dispersive optical parameters in InS layered crystals QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Elsevier BV, 2010-02-01) The anisotropy effect on the current transport mechanism and on the dispersive optical parameters of indium monosulfide crystals has been studied by means of electrical conductivity and polarized reflectance measurements along the a-axis and the b-axis, respectively. The temperature-dependent electrical conductivity analysis in the range 10-350 K for the a-axis and in the range 30-350 K for the b-axis revealed the domination of the thermionic emission of charge carriers and the domination of variable range ...

Citation Formats

S. Erkoc and Ş. Katırcıoğlu, “Dependence of energy levels and optical transitions on layer thicknesses in InSe/GaSe superlattices,” JOURNAL OF CRYSTAL GROWTH, pp. 331–335, 1998, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37413.