Refractive index, static dielectric constant, energy band gap and oscillator parameters of Ga2SeS single crystals

Date

2007-09-01

Author

Qasrawi, A. F.
Hasanlı, Nızamı

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The optical properties of Bridgman method grown Ga2SeS crystals have been investigated by means of room-temperature transmittance and reflectance spectral analysis. The optical data have revealed direct and indirect allowed transition band gaps of 2.49 and 2.10 eV, respectively. The room-temperature refractive index, which was calculated from the reflectance and transmittance data, allowed the identification of the dispersion and oscillator energies, static dielectric constant and static refractive index as 20.93 eV and 4.01 eV, 6.21 and 2.49, respectively.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Surfaces and Interfaces, Condensed Matter Physics

URI

https://hdl.handle.net/11511/47398

Journal

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

DOI

https://doi.org/10.1002/pssa.200723122

Collections

Department of Physics, Article

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Citation Formats

A. F. Qasrawi and N. Hasanlı, “Refractive index, static dielectric constant, energy band gap and oscillator parameters of Ga2SeS single crystals,” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, pp. 3165–3169, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47398.