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Thermally stimulated current measurements in as-grown TIGaSeS layered single crystals
Date
2009-11-01
Author
YILDIRIM, TACETTİN
Hasanlı, Nızamı
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This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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Charge carrier traps in as-grown TIGaSeS layered single crystals were studied using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 100 K. The experimental evidences were found for the presence of one shallow hole trapping center in TIGaSeS, located at 12 meV from the valence band. The trap parameters have been calculated using various methods of analysis, and these agree well with each other. Its capture cross-section and concentration have been found to be 8.9 x 10(-26) cm(2) and 2.0 x 10(14) cm(-3), respectively. Analysis of the thermally stimulated current data at different light excitation temperatures leads to a value of 19 meV/decade for the shallow hole traps distribution.
Subject Keywords
General Physics and Astronomy
,
General Materials Science
URI
https://hdl.handle.net/11511/41728
Journal
CURRENT APPLIED PHYSICS
DOI
https://doi.org/10.1016/j.cap.2009.02.011
Collections
Department of Physics, Article