Thermally stimulated current measurements in as-grown TIGaSeS layered single crystals

Date

2009-11-01

Author

YILDIRIM, TACETTİN
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

180
views

0
downloads

Charge carrier traps in as-grown TIGaSeS layered single crystals were studied using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 100 K. The experimental evidences were found for the presence of one shallow hole trapping center in TIGaSeS, located at 12 meV from the valence band. The trap parameters have been calculated using various methods of analysis, and these agree well with each other. Its capture cross-section and concentration have been found to be 8.9 x 10(-26) cm(2) and 2.0 x 10(14) cm(-3), respectively. Analysis of the thermally stimulated current data at different light excitation temperatures leads to a value of 19 meV/decade for the shallow hole traps distribution.

Subject Keywords

General Physics and Astronomy, General Materials Science

URI

https://hdl.handle.net/11511/41728

Journal

CURRENT APPLIED PHYSICS

DOI

https://doi.org/10.1016/j.cap.2009.02.011

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Thermally Stimulated Current Study of Shallow Traps in As-Grown TlInSe2 Chain Crystals Hasanlı, Nızamı (Institute of Physics, Polish Academy of Sciences, 2011-03-01) Thermally stimulated current measurements were carried out on as-grown TlInSe2 single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K s(-1). The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 x 10(13) and 3.4 x 10(12) cm(-3)) and capture cross section (4.1 x 10(-28) and...
Thermally stimulated current observation of trapping centers and their distribution in as-grown TlGaSeS layered single crystals YILDIRIM, TACETTİN; Hasanlı, Nızamı (Elsevier BV, 2009-11-15) Thermally stimulated current (TSC) measurements were carried out in as-grown TlGaSeS layered single crystals. The investigations were performed in temperatures ranging from 10 to 160 K with heating rate of 0.8 K s(-1). The analysis of the data revealed three electron trap levels at 13, 20 and 50 meV The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 3.3 x 10(-24), 1.0 x 10(-24), and 11 x 10(-24)...
Thermally stimulated current measurements in undoped Ga3InSe4 single crystals IŞIK, MEHMET; Hasanlı, Nızamı (Elsevier BV, 2011-06-01) The trap levels in nominally undoped Ga3InSe4 crystals were investigated in the temperature range of 10-300 K using the thermally stimulated currents technique. The study of trap levels was accomplished by the measurements of current flowing along the c-axis of the crystal. During the experiments we utilized a constant heating rate of 0.8 K/s. Experimental evidence is found for one hole trapping center in the crystal with activation energy of 62 meV. The analysis of the experimental TSC curve gave reasonabl...
Properties of Tl4Se3S single crystals and characterization of Ag/Tl4Se3S Schottky barrier diodes QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Elsevier BV, 2010-03-01) The main physical properties of Tl4Se3S single crystals were investigated for the first time. Particularly, the crystal data, Debye temperature, dark electrical resistivity and Hall effect in addition to the temperature dependent current-voltage characteristics and photosensitivity of the Ag/Tl4Se3S Schottky barrier diode were studied. The X-ray diffraction patterns have revealed that the crystal exhibited a single phase of tetragonal structure belonging to the D-4h(18) - 14mcm space group. A Debye temperat...
Shallow trapping center parameters in as-grown AgIn5S8 crystals determined by thermally stimulated current measurements YILDIRIM, TACETTİN; Hasanlı, Nızamı (Wiley, 2009-12-01) Thermally stimulated current measurements were carried out on as-grown AgIn5S8 single crystals. The investigations were performed in temperatures ranging from 10 to 70 K with heating rate of 0.2 K/s. The analysis of the data revealed the electron trap level located at 5 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 2.2 x 10(-25) cm(2) for capture cross section and 6.1 x 10(12) cm(-3) f...

Citation Formats

T. YILDIRIM and N. Hasanlı, “Thermally stimulated current measurements in as-grown TIGaSeS layered single crystals,” CURRENT APPLIED PHYSICS, pp. 1278–1282, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41728.