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Temperature-dependent radiative lifetimes of excitons in non-polar GaN/AlGaN quantum wells

2007-01-01
Rudin, S.
Garrett, G. A.
Shen, H.
Wraback, M.
İmer, Muhsine Bilge
Haskell, B.
Speck, J. S.
Keller, S.
Nakamura, S.
DenBaars, S. P.
We report theoretical and experimental studies of radiative recombination of carriers in GaN quantum wells grown on low defect a-plane GaN templates fabricated by lateral epitaxial overgrowth. The radiative rates are presented as functions of temperature and well width.