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Temperature-dependent radiative lifetimes of excitons in non-polar GaN/AlGaN quantum wells
Date
2007-01-01
Author
Rudin, S.
Garrett, G. A.
Shen, H.
Wraback, M.
İmer, Muhsine Bilge
Haskell, B.
Speck, J. S.
Keller, S.
Nakamura, S.
DenBaars, S. P.
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This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
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We report theoretical and experimental studies of radiative recombination of carriers in GaN quantum wells grown on low defect a-plane GaN templates fabricated by lateral epitaxial overgrowth. The radiative rates are presented as functions of temperature and well width.
Subject Keywords
Engineering, Electrical & Electronic
,
Optics
,
Physics, Multidisciplinary
,
Physics, Condensed Matter
URI
https://hdl.handle.net/11511/39297
DOI
https://doi.org/10.1063/1.2729894
Collections
Department of Metallurgical and Materials Engineering, Conference / Seminar