Temperature-dependent radiative lifetimes of excitons in non-polar GaN/AlGaN quantum wells

Date

2007-01-01

Author

Rudin, S.
Garrett, G. A.
Shen, H.
Wraback, M.
İmer, Muhsine Bilge
Haskell, B.
Speck, J. S.
Keller, S.
Nakamura, S.
DenBaars, S. P.

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We report theoretical and experimental studies of radiative recombination of carriers in GaN quantum wells grown on low defect a-plane GaN templates fabricated by lateral epitaxial overgrowth. The radiative rates are presented as functions of temperature and well width.

Subject Keywords

Engineering, Electrical & Electronic, Optics, Physics, Multidisciplinary, Physics, Condensed Matter

URI

https://hdl.handle.net/11511/39297

DOI

https://doi.org/10.1063/1.2729894

Collections

Department of Metallurgical and Materials Engineering, Conference / Seminar

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Citation Formats

S. Rudin et al., “Temperature-dependent radiative lifetimes of excitons in non-polar GaN/AlGaN quantum wells,” 2007, vol. 893, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39297.