Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

2016-04-12
Akgul, Guvenc
Akgul, Funda Aksoy
Ünalan, Hüsnü Emrah
Turan, Raşit
In this work, photovoltaic performance of Ga-doped ZnO thin film/Si NWs heterojunction diodes was investigated. Highly dense and vertically well-aligned Si NW arrays were successfully synthesised on a p-type (1 0 0)-oriented Si wafer through cost-effective metal-assisted chemical etching technique. Ga-doped ZnO thin films were deposited onto Si NWs via radio frequency magnetron sputtering to construct three-dimensional heterostructures. Photovoltaic characteristics of the fabricated diodes were determined with current density (J)-voltage (V) measurements under simulated solar irradiation of AM 1.5G. The optimal open-circuit voltage, short-circuit current density, fill factor and power conversion efficiency were found to be 0.37V, 3.30mAcm(-2), 39.00 and 0.62%, respectively. Moreover, photovoltaic diodes exhibited relatively high external quantum efficiency over the broadband wavelengths between 350 and 1100nm interval of the spectrum. The observed photovoltaic performance in this study clearly indicates that the investigated device structure composed of Ga-doped ZnO thin film/Si NWs heterojunctions could facilitate an alternative pathway for optoelectronic applications in future, and be a promising alternative candidate for high-performance low-cost new-generation photovoltaic diodes.
PHILOSOPHICAL MAGAZINE

Suggestions

Photovoltaic performance of CdS/CdTe junctions on ZnO nanorod arrays
Kartopu, G.; Turkay, D.; Özcan, Can; Hadıbrata, W.; Aurang, P.; Yerci, Selçuk; Ünalan, Hüsnü Emrah; Barrioz, V.; Qu, Y.; Bowen, L.; Gurlek, A. K.; Maiello, P.; Turan, Raşit; Irvine, S. J. C. (2018-03-01)
One-dimensional nanostructures, such as nanorod (NR) arrays, are expected to improve the photovoltaic (PV) response of solar cells with an ultrathin absorber due to an increased areal (junction) density and light trapping. We report on the deposition of CdS and CdTe:As semiconductor thin films on ZnO NR arrays by means of metalorganic chemical vapour deposition (MOCVD). The change in optical properties of the ZnO NRs upon the growth of CdS shell was monitored and compared to the simulated data, which confir...
Copper nanowire network based transparent thin film heaters
Tigan, Doğancan; Ünalan, Hüsnü Emrah; İmer, Muhsine Bilge; Department of Metallurgical and Materials Engineering (2018)
Metallic nanowire random networks are highly promising as transparent thin film heaters (TTFHs) due to their significant optoelectronic performance and thermal conductivity. Typically silver nanowires (Ag NWs) are utilized as TTFHs but in recent years, copper nanowires (Cu NWs) started to replace them in many applications as an economic alternative. The electrical conductivity of Cu is almost equal to that of Ag and it is much cheaper than Ag at least in bulk form. However, stability of Cu NWs is a lot poor...
Near infrared interference filter design and the production with ion-assisted deposition techniques
Aydoğdu, Selçuk; Esendemir, Akif; Department of Physics (2012)
Near infrared region (NIR) of the electromagnetic spectrum (EM) is defined as 700nm to 1400nm wavelength interval by International Commission on Illumination(CIE). This wavelength interval is extensively used for target acquisition, night vision, wireless communication etc. Therefore, filtering the desired portion of EM spectra becomes a need for that kind of applications. Interference filters are multilayer optical devices which can be designed and produced for the desired wavelength intervals. The product...
PHOTO-CARRIER DYNAMICS OF BLENDED AND MULTI-LAYERED FILMS OF ZINC PHTHALOCYANINE AND C-60 MEASURED BY TIME-RESOLVED TERAHERTZ SPECTROSCOPY
Melinger, Joseph S.; Lane, Paul; Esentürk, Okan; Heilweil, Edwin (2010-06-25)
We present a study of photo-induced carrier dynamics in organic thin films that contain zinc phthalocyanine (ZnPc) and buckminsterfullerene (C-60) investigated by ultrafast time resolved terahertz spectroscopy (TRTS). We compare two classes of films: 1) blend films of ZnPc and C-60 prepared by co-evaporation, and 2) superlattice films from alternating neat layers of ZnPc and C-60, where the individual layer varies in thickness between 2 nm and 40 nm. These films are model structures for the charge generatio...
Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode
Yigiterol, F.; Güllü, Hasan Hüseyin; Bayraklı, Özge; YILDIZ, DİLBER ESRA (Springer Science and Business Media LLC, 2018-05-01)
Electrical characteristics of the Au/Si3N4/4H n-SiC metal–insulator-semiconductor (MIS) diode were investigated under the temperature, T, interval of 160–400 K using current–voltage (I–V), capacitance–voltage (C−V) and conductance–voltage (G/ω−V) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height (ΦB0) and ideality factor (n) were calculated according to the thermionic emission (TE) from forward bias I–V analysis in the whole working T. Experimental results showed that the valu...
Citation Formats
G. Akgul, F. A. Akgul, H. E. Ünalan, and R. Turan, “Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes,” PHILOSOPHICAL MAGAZINE, pp. 1093–1109, 2016, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39516.