Photovoltaic performance of Gallium-doped ZnO thin film/Si nanowires heterojunction diodes

Date

2016-04-12

Author

Akgul, Guvenc
Akgul, Funda Aksoy
Ünalan, Hüsnü Emrah
Turan, Raşit

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In this work, photovoltaic performance of Ga-doped ZnO thin film/Si NWs heterojunction diodes was investigated. Highly dense and vertically well-aligned Si NW arrays were successfully synthesised on a p-type (1 0 0)-oriented Si wafer through cost-effective metal-assisted chemical etching technique. Ga-doped ZnO thin films were deposited onto Si NWs via radio frequency magnetron sputtering to construct three-dimensional heterostructures. Photovoltaic characteristics of the fabricated diodes were determined with current density (J)-voltage (V) measurements under simulated solar irradiation of AM 1.5G. The optimal open-circuit voltage, short-circuit current density, fill factor and power conversion efficiency were found to be 0.37V, 3.30mAcm(-2), 39.00 and 0.62%, respectively. Moreover, photovoltaic diodes exhibited relatively high external quantum efficiency over the broadband wavelengths between 350 and 1100nm interval of the spectrum. The observed photovoltaic performance in this study clearly indicates that the investigated device structure composed of Ga-doped ZnO thin film/Si NWs heterojunctions could facilitate an alternative pathway for optoelectronic applications in future, and be a promising alternative candidate for high-performance low-cost new-generation photovoltaic diodes.

Subject Keywords

Heterojunction devices, Photovoltaics, Thin films, Nanowires, Nanostructured semiconductors

URI

https://hdl.handle.net/11511/39516

Collections

Department of Metallurgical and Materials Engineering, Article