Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Application of Si Nanowires Fabricated by Metal-Assisted Etching to Crystalline Si Solar Cells
Date
2013-01-01
Author
KULAKCI, Mustafa
ES, FIRAT
ÖZDEMİR, Baris
Ünalan, Hüsnü Emrah
Turan, Raşit
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
260
views
0
downloads
Cite This
Reflection and transmission through a solar cell can be significantly reduced using light-trapping structures. This approach can be applied to both crystalline and thin-film solar cells to improve the light absorption and conversion efficiency of the cell. In this study, vertically aligned Si nanowires were fabricated over a large area via a metal-assisted etching technique. Following a detailed parametric study, nanowires were applied to industrial-size (156 mm x 156 mm) Si solar cells. The reflectivity from the device surface was reduced to less than 5% for the entire visible spectrum (350-750 nm), including the blue-violet region. Standard solar cell fabrication procedures were employed to fabricate cells with and without Si nanowires, and the results showed that the efficiencies of solar cells with nanowires were similar to those of standard pyramid-textured cells, revealing the potential of the proposed concept. A systematic study of the dependence of the solar cell parameters on the length of the nanowires was performed. The quantum efficiency of the cells exhibited relatively poor performance in the blue-ultraviolet range of the spectrum, and enhancement in carrier generation was observed in the red-infrared region especially for shorter nanowires.
Subject Keywords
Light management
,
Monocrystalline
,
Nanowires
,
Silicon solar cells
,
Texturing
URI
https://hdl.handle.net/11511/39598
Journal
IEEE JOURNAL OF PHOTOVOLTAICS
DOI
https://doi.org/10.1109/jphotov.2012.2228300
Collections
Department of Metallurgical and Materials Engineering, Article
Suggestions
OpenMETU
Core
An Alternative Metal-Assisted Etching Route for Texturing Silicon Wafers for Solar Cell Applications
Es, Fırat; Kulakci, Mustafa; Turan, Raşit (2016-03-01)
Metal-assisted etching (MAE) can be used to form antireflective and light-trapping structures on crystalline silicon solar cells. This method has been widely used to form nanowires and nanoholes on their surfaces. In this study, the MAE technique with additional hole-injection mechanisms has been investigated to form surface nanostructures with various shapes. The effect of each chemical's percentage, as well as the etching time, has been studied on the surface geometry and optical performance. The average ...
Analysis of boron doped hydrogenated amorphous silicon carbide thin film for silicon heterojunction solar cells
Salimi, Arghavan; Turan, Raşit; Department of Micro and Nanotechnology (2019)
Silicon based solar cells are the dominant type of solar cells in the photovoltaic industry. Recently, there have been increasing efforts to develop c-Si solar cells with higher efficiency and lower cost. Among them, silicon heterojunction solar cell (SHJ) is attracting much attention because of its superior performance values demonstrated at both R&D and industrial levels. One of the common limiting criteria is the recombination at the front side which can be solved by providing proper passivation at the f...
Design of high-efficiency dye-sensitized nanocrystalline solar cells
Yavuz, Halil İbrahim; Özenbaş, Ahmet Macit; Erçelebi, Ayşe Çiğdem; Department of Metallurgical and Materials Engineering (2014)
Nanocrystalline dye sensitized solar cells (DSSC) technology continues to develop as a better alternative to the silicon based solar cells, which are commercialized. This study aims at finding low cost and highly efficient DSSC design and production methods via examination of effects of both photoanode structure and photon-electron generation mechanism on photoanode layers. This will contribute to the commercialization of DSSC technology. Photoanode structure is examined in four groups; transparent conducti...
Selective emitter formation via single step doping through laser patterned mask oxide layer for monocrystalline silicon solar cells
Çiftpınar, Emine Hande; Turan, Raşit; Department of Physics (2014)
Selective emitter is one of the new approaches for higher efficiency solar cells. Although selective emitter cells could be processed by several different methods such as; etch back process, laser doping, ion implantation, doping paste, a different method based on diffusion through a laser patterned oxide layer was studied in this thesis. Utilization of pattern oxide layer as a diffusion barrier enables to obtain selective emitter profile via single step doping which reduces overall production cost and time...
Efficient Light Trapping in Inverted Nanopyramid Thin Crystalline Silicon Membranes for Solar Cell Applications
MAVROKEFALOS, Anastassios; HAN, Sang Eon; Yerci, Selçuk; Branham, Matthew S.; CHEN, Gang (2012-06-01)
Thin-film crystalline silicon (c-Si) solar cells with light-trapping structures can enhance light absorption within the semiconductor absorber layer and reduce material usage. Here we demonstrate that an inverted nanopyramid light-trapping scheme for c-Si thin films, fabricated at wafer scale via a low-cost wet etching process, significantly enhances absorption within the c-Si layer. A broadband enhancement in absorptance that approaches the Yablo-novitch limit (Yablo-novitch, E. J. Opt. Soc. Am. 1987, 72, ...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
M. KULAKCI, F. ES, B. ÖZDEMİR, H. E. Ünalan, and R. Turan, “Application of Si Nanowires Fabricated by Metal-Assisted Etching to Crystalline Si Solar Cells,”
IEEE JOURNAL OF PHOTOVOLTAICS
, pp. 548–553, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39598.