Low-temperature Raman scattering spectra of GaSexS1-x layered mixed crystals

Download
2002-01-01
Raman scattering has been used to study the vibrational spectra of GaSexS1-x layered mixed crystals at 10 K. We report the Frequency dependencies of different modes on composition x, with particular emphasis on A(1)('(2)) (A(1g)(1)) and A(1)('(4)) (A(1g)(2)) intralayer compressional modes having low dispersion in the Brillouin zone. The appearance of additional bands is attributed to multimode behavior typically exhibited by mixed crystals of anisotropic compounds.

Suggestions

Below and above bandgap excited photoluminescence in Tl4InGa3S8 layered single crystals
Goksen, K.; Hasanlı, Nızamı (IOP Publishing, 2007-11-14)
Photoluminescence (PL) spectra of Tl4InGa3S8 layered single crystals grown by the Bridgman method have been studied in the 550-710 nm wavelength and 80 300 K temperature ranges with below bandgap excitation (lambda(exc) = 532 nm), and in the 420-600 nm wavelength and 30-300 K temperature ranges with above bandgap excitation (lambda(exc) = 325 nm). The broad emission bands centered at 580 nm (2.14 eV) and 496 nm (2.49 eV) were observed at T = 80 and 30 K for below and above bandgap excitation processes, resp...
Temperature and excitation intensity tuned photoluminescence in Tl4GaIn3S8 layered single crystals
Golksen, K.; Hasanlı, Nızamı (Wiley, 2008-05-01)
Photoluminescence spectra of Tl4GaIn3S8 layered crystals grown by Bridgman method have been studied in the wavelength region of 500-780 nm and in the temperature range of 26-130 K with extrinsic excitation source (lambda(exc) = 532 nm), and at T = 26 K with intrinsic excitation source (lambda(exc) = 406 nm). Three emission bands A, B and C centered at 514 nm (2.41 eV), 588 nm (2.11 eV) and 686 nm (1.81 eV), respectively, were observed for extrinsic excitation process. Variations in emission spectra have bee...
Photoluminescence spectra of GaS0.75Se0.25 layered single crystals
Hasanlı, Nızamı; Ozkan, H (Wiley, 2002-01-01)
Photoluminescence (PL) spectra of GaS0.75Se0.25 layered single crystals have been studied in the wavelength region of 500-850 nm and in the temperature range of 10-200 K. Two PL bands centered at 527 ( 2.353 eV, A-band) and 658 nm (1.884 eV, B-band) were observed at T = 10 K. Variations of both bands have been studied as a function of excitation laser intensity in the range from 8x10(-3) to 10.7 W cm(-2). These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in ...
Infrared photoluminescence from TlGaS2 layered single crystals
Yuksek, NS; Hasanlı, Nızamı; Aydinli, A; Ozkan, H; Acikgoz, M (Wiley, 2004-09-01)
Photolimuniscence (PL) spectra of TlGaS2 layered crystals were studied in the wavelength region 500-1400 nm and in the temperature range 15-115 K, We observed three broad bands centered at 568 nm (A-band), 718 nm (B-band) and 1102 nm (C-band) in the PL spectrum. The observed bands have half-widths of 0.221, 0.258 and 0.067 eV for A-, B-, and C-bands, respectively. The increase of the emission band half-width, the blue shift of the emission band peak energy and the quenching of the PL with increasing tempera...
Effects of annealing on structural, electrical and optical properties of AgGa(Se0.5S0.5)(2) thin films deposited by using sintered stoichometric powder
KARAAĞAÇ, HAKAN; Parlak, Mehmet (Wiley, 2009-04-01)
The structural, electrical and optical properties of AgGa(Se0.5S0.5)(2) thin films deposited by using the thermal evaporation method have been investigated as a function of annealing in the temperature range of 450-600 degrees C. X-ray diffraction (X-RD) analysis showed that the structural transformation from amorphous to polycrystalline structure started at 450 degrees C with mixed binary phases of Ga2Se3, Ga2S3, ternary phase of AgGaS2 and single phase of S. The compositional analysis with the energy disp...
Citation Formats
N. Hasanlı, “Low-temperature Raman scattering spectra of GaSexS1-x layered mixed crystals,” CRYSTAL RESEARCH AND TECHNOLOGY, pp. 1011–1017, 2002, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39900.