Below and above bandgap excited photoluminescence in Tl4InGa3S8 layered single crystals

Date

2007-11-14

Author

Goksen, K.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

61
views

0
downloads

Photoluminescence (PL) spectra of Tl4InGa3S8 layered single crystals grown by the Bridgman method have been studied in the 550-710 nm wavelength and 80 300 K temperature ranges with below bandgap excitation (lambda(exc) = 532 nm), and in the 420-600 nm wavelength and 30-300 K temperature ranges with above bandgap excitation (lambda(exc) = 325 nm). The broad emission bands centered at 580 nm (2.14 eV) and 496 nm (2.49 eV) were observed at T = 80 and 30 K for below and above bandgap excitation processes, respectively. Variations in emission spectra have been studied as a function of excitation laser intensity in the 10.3-429.7 mWcm(-2) range for below bandgap excitation. Radiative transitions from the donor levels located at 0.02 and 0.37 eV below the bottom of the conduction band to the deep acceptor level located at 0.20 eV above the top of the valence band were proposed to be responsible for the observed PL bands. From x-ray powder diffraction and EDS analysis, the monoclinic unit cell parameters and compositional parameters, respectively, were determined.

Subject Keywords

General Materials Science, Condensed Matter Physics

URI

https://hdl.handle.net/11511/43111

Journal

JOURNAL OF PHYSICS-CONDENSED MATTER

DOI

https://doi.org/10.1088/0953-8984/19/45/456221

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Temperature and excitation intensity tuned photoluminescence in Tl4GaIn3S8 layered single crystals Golksen, K.; Hasanlı, Nızamı (Wiley, 2008-05-01) Photoluminescence spectra of Tl4GaIn3S8 layered crystals grown by Bridgman method have been studied in the wavelength region of 500-780 nm and in the temperature range of 26-130 K with extrinsic excitation source (lambda(exc) = 532 nm), and at T = 26 K with intrinsic excitation source (lambda(exc) = 406 nm). Three emission bands A, B and C centered at 514 nm (2.41 eV), 588 nm (2.11 eV) and 686 nm (1.81 eV), respectively, were observed for extrinsic excitation process. Variations in emission spectra have bee...
Low-temperature Raman scattering spectra of GaSexS1-x layered mixed crystals Hasanlı, Nızamı (Wiley, 2002-01-01) Raman scattering has been used to study the vibrational spectra of GaSexS1-x layered mixed crystals at 10 K. We report the Frequency dependencies of different modes on composition x, with particular emphasis on A(1)('(2)) (A(1g)(1)) and A(1)('(4)) (A(1g)(2)) intralayer compressional modes having low dispersion in the Brillouin zone. The appearance of additional bands is attributed to multimode behavior typically exhibited by mixed crystals of anisotropic compounds.
Visible photoluminescence from chain Tl4In3GaSe8 semiconductor Hasanlı, Nızamı (IOP Publishing, 2006-07-05) The emission band spectra of undoped Tl4In3GaSe8 chain crystals have been studied in the 16-300 K temperature range and the 535-740 nm wavelength range. Two visible photoluminescence bands centred at 589 and 633 nm were observed at T = 16 K. Variations of both bands have been investigated over a wide range of laser excitation intensity ( 3 x 10(-4) -1.2 W cm(-2)). Radiative transitions with energies of 2.10 and 1.96 eV from two upper conduction bands to two shallow acceptor levels (0.03 and 0.01 eV), respec...
Infrared photoluminescence from TlGaS2 layered single crystals Yuksek, NS; Hasanlı, Nızamı; Aydinli, A; Ozkan, H; Acikgoz, M (Wiley, 2004-09-01) Photolimuniscence (PL) spectra of TlGaS2 layered crystals were studied in the wavelength region 500-1400 nm and in the temperature range 15-115 K, We observed three broad bands centered at 568 nm (A-band), 718 nm (B-band) and 1102 nm (C-band) in the PL spectrum. The observed bands have half-widths of 0.221, 0.258 and 0.067 eV for A-, B-, and C-bands, respectively. The increase of the emission band half-width, the blue shift of the emission band peak energy and the quenching of the PL with increasing tempera...
Photoluminescence spectra of GaS0.75Se0.25 layered single crystals Hasanlı, Nızamı; Ozkan, H (Wiley, 2002-01-01) Photoluminescence (PL) spectra of GaS0.75Se0.25 layered single crystals have been studied in the wavelength region of 500-850 nm and in the temperature range of 10-200 K. Two PL bands centered at 527 ( 2.353 eV, A-band) and 658 nm (1.884 eV, B-band) were observed at T = 10 K. Variations of both bands have been studied as a function of excitation laser intensity in the range from 8x10(-3) to 10.7 W cm(-2). These bands are attributed to recombination of charge carriers through donor-acceptor pairs located in ...

Citation Formats

K. Goksen and N. Hasanlı, “Below and above bandgap excited photoluminescence in Tl4InGa3S8 layered single crystals,” JOURNAL OF PHYSICS-CONDENSED MATTER, pp. 0–0, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/43111.