Crystal data and indirect optical transitions in Tl2InGaSe4 crystals

Date

2008-06-03

Author

QASRAWI, ATEF FAYEZ HASAN
Hasanlı, Nızamı

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The room temperature crystal data and the optical properties of the Bridgman method grown Tl2InGaSe4 crystals are reported and discussed. The X-ray diffraction technique has revealed that Tl2InGaSe4 is a single phase crystal of monoclinic structure. The unit cell lattice parameters, which were recalculated from the X-ray data, are found to be a = 0.77244 nm, b = 0.64945 nm, c = 0.92205 nm and beta = 95.03 degrees. The temperature dependence of the optical band gap of Tl2InGaSe4 single crystal in the temperature region of 290-500 K has also been investigated. The absorption coefficient was calculated from the transmittance and reflectance data in the incident photon energy range of 1.60-2.10 eV. The absorption edge is observed to shift toward lower energy values as temperature increases. The fundamental absorption edge corresponds to indirect allowed transition energy gap of 1.86 eV that exhibited a temperature coefficient gamma = -3.53 x 10(-4) eV/K.

Subject Keywords

Mechanical Engineering, General Materials Science, Mechanics of Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/39180

Journal

MATERIALS RESEARCH BULLETIN

DOI

https://doi.org/10.1016/j.materresbull.2007.06.025

Collections

Department of Physics, Article

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Citation Formats

A. F. H. QASRAWI and N. Hasanlı, “Crystal data and indirect optical transitions in Tl2InGaSe4 crystals,” MATERIALS RESEARCH BULLETIN, pp. 1497–1501, 2008, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39180.