Fabrication of CdSexTe1-x thin films by sequential growth using double sources

Date

2021-10-15

Author

Demir, Medine
Terlemezoglu, M.
Parlak, Mehmet

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CdSexTe(1-x) (CST) ternary thin films were fabricated by stacking thermally evaporated CdSe and electron beam evaporated CdTe layers. The final structure was achieved in a stoichiometric form of approximately Cd:Se:Te = 50:25:25. The post-annealing processes at 300, 400, and 450 °C were applied to trigger the compound formation of CST thin films. The X-ray diffraction (XRD) profiles revealed that CdTe and CdSe have major peaks at 23.9° and 25.5° corresponds to (111) direction in cubic zinc-blend structure. Raman modes of CdTe were observed at 140 and 168 cm−1, while Raman modes of CdSe films were detected at 208 and 417 cm−1. The post-annealing process was found to be an effective method in order to combine both diffraction peaks and the vibrational modes of CdTe and CdSe, consequently to form CST ternary alloy. Transmission spectroscopy analysis revealed that CST films have direct band gap value of 1.6 eV.

Subject Keywords

CdSexTe1-x, Thin film, Evaporation, Annealing

URI

https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85109209586&origin=inward
https://hdl.handle.net/11511/91352

Journal

Physica B: Condensed Matter

DOI

https://doi.org/10.1016/j.physb.2021.413232

Collections

Department of Mathematics, Article

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Citation Formats

M. Demir, M. Terlemezoglu, and M. Parlak, “Fabrication of CdSexTe1-x thin films by sequential growth using double sources,” Physica B: Condensed Matter, pp. 0–0, 2021, Accessed: 00, 2021. [Online]. Available: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85109209586&origin=inward.