METALLIC PHASE OF AMORPHOUS-SILICON

Date

1989-01-01

Author

ERKOC, S
Katırcıoğlu, Şenay

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

175
views

0
downloads

The local density-of-states calculation has been carried out for the amorphous silicon thin film generated by molecular-dynamics simulation by melting and quenching process. It is found that thin amorphous silicon film has a metallic phase on the free surface region.

Subject Keywords

Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Ceramics and Composites

URI

https://hdl.handle.net/11511/36234

Journal

JOURNAL OF NON-CRYSTALLINE SOLIDS

DOI

https://doi.org/10.1016/0022-3093(89)90480-8

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Electrical response of electron selective atomic layer deposited TiO2-x heterocontacts on crystalline silicon substrates Ahiboz, Doguscan; Nasser, Hisham; Aygun, Ezgi; Bek, Alpan; Turan, Raşit (IOP Publishing, 2018-04-01) Integration of oxygen deficient sub-stoichiometric titanium dioxide (TiO2-x) thin films as the electron transporting-hole blocking layer in solar cell designs are expected to reduce fabrication costs by eliminating high temperature processes while maintaining high conversion efficiencies. In this paper, we conducted a study to reveal the electrical properties of TiO2-x thin films grown on crystalline silicon (c-Si) substrates by atomic layer deposition (ALD) technique. Effect of ALD substrate temperature, p...
XPS study of pulsed Nd : YAG laser oxidized Si Aygun, G.; Atanassova, E.; Kostov, K.; Turan, Raşit (Elsevier BV, 2006-08-15) X-ray photoelectron spectra (XPS) of thin SiO2 layers grown by pulsed Nd:YAG laser at a substrate temperature of 748 K are presented, The peak decomposition technique combined with depth profiling is employed to identify the composition and chemical states of the film structure. It is established that the oxide is non-stoichiometric, and contains all oxidation states of Si in different amounts throughout the film. The interface Si/laser-grown oxide is not abrupt, and the coexistence of Si2O3 and Si2O suboxi...
Theoretical prediction of bulk glass forming ability (BGFA) of Ti-Cu based multicomponent alloys SUER, Sila; Mehrabov, Amdulla; Akdeniz, Mahmut Vedat (Elsevier BV, 2009-03-01) The bulk glass forming ability (BGFA) of Ti-Cu based multicomponent alloys has been evaluated via theoretical modeling and computer simulation studies based on a combination of electronic theory of alloys in the pseudopotential approximation and the statistical thermodynamical theory of liquid alloys The. magnitude of atomic ordering energies, calculated by means of the electronic theory of alloys in the pseudopotential approximation, was subsequently used for calculation of the key thermodynamic parameters...
Thermally stimulated currents in layered Ga4SeS3 semiconductor Aytekin, S; Yuksek, NS; Goktepe, M; Hasanlı, Nızamı; Aydinli, A (Wiley, 2004-10-01) Thermally stimulated current (TSC) measurements are carried out on nominally undoped Ga4SeS3 layered semiconductor samples with the cur-rent flowing along the c-axis in the temperature range of 10 to 150 K. The results are analyzed according to various methods, such as curve fitting, initial rise and Chen's methods, which seem to be in good agreement with each other. Experimental evidence is found for the presence of three trapping centers in Ga4SeS3 with activation energies of 70, 210 and 357 meV. The calc...
Thermally stimulated current analysis of shallow levels in TlGaS2 layered single crystals Yuksek, NS; Hasanlı, Nızamı; Ozkan, H (IOP Publishing, 2003-09-01) We have carried out thermally stimulated current measurements on as-grown T1GaS(2) layered single crystals in the temperature range of 10-60 K with various heating rates. We found experimental evidence for the presence of three trapping centres in TlGaS2, located at 6, 12 and 26 meV. We have determined the trap parameters using various methods of analysis, and these agree well with each other. The retrapping process is negligible for these levels, as confirmed by the good agreement between the experimental ...

Citation Formats

S. ERKOC and Ş. Katırcıoğlu, “METALLIC PHASE OF AMORPHOUS-SILICON,” JOURNAL OF NON-CRYSTALLINE SOLIDS, pp. 328–329, 1989, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36234.