Admittance analysis of an MIS structure made with PECVD deposited a-SiNx : H thin films

Date

1999-07-01

Author

Atilgan, I
Ozder, S
Ozdemir, O
Katircioglu, B

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a-SiNx:H thin films, prepared by the PECVD technique, were optically and electrically characterized. The frequency dependent trap admittance derived for the MIS structure in the accumulation gate voltage regime was revised. Based on these results an omitted multiplying factor was included into the derivation. An extension of the tunnelling model in the depletion bias regime was used in comparison with the widely accepted statistical model and finally, the more general feature of the tunnelling-based approaches was discussed.

Subject Keywords

Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Ceramics and Composites

URI

https://hdl.handle.net/11511/67534

Collections

Department of Physics, Article