Admittance analysis of an MIS structure made with PECVD deposited a-SiNx : H thin films

Date

1999-07-01

Author

Atilgan, I
Ozder, S
Ozdemir, O
Katircioglu, B

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

137
views

0
downloads

a-SiNx:H thin films, prepared by the PECVD technique, were optically and electrically characterized. The frequency dependent trap admittance derived for the MIS structure in the accumulation gate voltage regime was revised. Based on these results an omitted multiplying factor was included into the derivation. An extension of the tunnelling model in the depletion bias regime was used in comparison with the widely accepted statistical model and finally, the more general feature of the tunnelling-based approaches was discussed.

Subject Keywords

Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics, Ceramics and Composites

URI

https://hdl.handle.net/11511/67534

Journal

JOURNAL OF NON-CRYSTALLINE SOLIDS

DOI

https://doi.org/10.1016/s0022-3093(99)00334-8

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Investigation of band gap energy versus temperature for SnS 2 thin films grown by RF-magnetron sputtering Isik, M.; Gullu, H. H.; Terlemezoglu, M.; Surucu, O. Bayrakli; Parlak, Mehmet; Hasanlı, Nızamı (Elsevier BV, 2020-08-01) SnS2 thin films grown by magnetron sputtering technique were characterized by structurally and optically in the present work. Crystalline parameters, atomic compositions, and surface characteristics of SnS2 thin films were presented according to results of applied structural techniques. Optical studies of SnS2 thin films were accomplished by Raman spectroscopy and transmission methods. Raman spectrum exhibited two modes around 198 and 320 cm−1. Transmittance data obtained for various temperatures between 10...
CONDUCTING POLYMERS OF ANILINE .2. A COMPOSITE AS A GAS SENSOR DOGAN, S; Akbulut, Ural; YALCIN, T; SUZER, S; Toppare, Levent Kamil (Elsevier BV, 1993-09-01) The gas sensing ability of electrochemically prepared pure polyaniline and polyaniline-poly(bisphenol-A carbonate) films is investigated. The responses of the composite films to several vapours are more well defined and reproducible compared to the pure conducting polymer. The changes in resistance as determined via the two-probe technique are well defined down to a level of 0.025% vol./vol. ammonia. The possible reason for such a difference is discussed. The structure of the composite is examined through p...
Frequency effect on electrical and dielectric characteristics of In/Cu2ZnSnTe4/Si/Ag diode structure Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoğlu, Makbule; Yildiz, D. E.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-05-01) In/Cu2ZnSnTe4/Si/Ag diode structure was fabricated by sputtering Cu2ZnSnTe4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with s...
XPS study of pulsed Nd : YAG laser oxidized Si Aygun, G.; Atanassova, E.; Kostov, K.; Turan, Raşit (Elsevier BV, 2006-08-15) X-ray photoelectron spectra (XPS) of thin SiO2 layers grown by pulsed Nd:YAG laser at a substrate temperature of 748 K are presented, The peak decomposition technique combined with depth profiling is employed to identify the composition and chemical states of the film structure. It is established that the oxide is non-stoichiometric, and contains all oxidation states of Si in different amounts throughout the film. The interface Si/laser-grown oxide is not abrupt, and the coexistence of Si2O3 and Si2O suboxi...
Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices Yilmaz, K.; Parlak, Mehmet; Ercelebi, C. (IOP Publishing, 2007-12-01) In this study, device behavior of amorphous InSe thin films was investigated through I-V, C-V and spectral response measurements onto SnO2/p-InSe/metal Schottky diode structures. Various metal contacts such as Ag, Au, Al, In and C were deposited onto amorphous p-InSe films by the thermal evaporation technique. The best rectifying contact was obtained in a SnO2/p-InSe/Ag Schottky structure from I-V measurements, while the Au contact had poor rectification. Other metal contacts (Al, In and C) showed almost oh...

Citation Formats

I. Atilgan, S. Ozder, O. Ozdemir, and B. Katircioglu, “Admittance analysis of an MIS structure made with PECVD deposited a-SiNx : H thin films,” JOURNAL OF NON-CRYSTALLINE SOLIDS, pp. 131–144, 1999, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/67534.