Plasma-activated direct bonding of diamond-on-insulator wafers to thermal oxide grown silicon wafers

Date

2010-11-01

Author

Bayram, Barış
Akın, Tayfun

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Diamond-on-insulator (DOI) wafers featuring ultrananocrystalline diamond are studied via atomic force microscopy, profilometer and wafer bow measurements. Plasma-activated direct bonding of DOI wafers to thermal oxide grown silicon wafers is investigated under vacuum. DOI wafer with chemical mechanical polishing (CMP) on the diamond surface makes a poor bonding to silicon wafers with thermal oxide. Our results show that plasma enhanced chemical vapor deposition of silicon dioxide on top of the DOI wafer, CMP of the oxide layer and annealing are essential to achieve very high quality direct bonding to thermal oxide grown on silicon wafers. Plasma activation results in the formation of high quality bonds without exceeding 550 degrees C in the direct wafer bonding process.

Subject Keywords

Diamond-on-insulator, Plasma activation, Ultrananocrystalline diamond, Direct bonding

URI

https://hdl.handle.net/11511/40766

Journal

DIAMOND AND RELATED MATERIALS

DOI

https://doi.org/10.1016/j.diamond.2010.08.015

Collections

Department of Electrical and Electronics Engineering, Article

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Citation Formats

B. Bayram and T. Akın, “Plasma-activated direct bonding of diamond-on-insulator wafers to thermal oxide grown silicon wafers,” DIAMOND AND RELATED MATERIALS, pp. 1431–1435, 2010, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/40766.