Plasma-activated direct bonding of diamond-on-insulator wafers to thermal oxide grown silicon wafers

Diamond-on-insulator (DOI) wafers featuring ultrananocrystalline diamond are studied via atomic force microscopy, profilometer and wafer bow measurements. Plasma-activated direct bonding of DOI wafers to thermal oxide grown silicon wafers is investigated under vacuum. DOI wafer with chemical mechanical polishing (CMP) on the diamond surface makes a poor bonding to silicon wafers with thermal oxide. Our results show that plasma enhanced chemical vapor deposition of silicon dioxide on top of the DOI wafer, CMP of the oxide layer and annealing are essential to achieve very high quality direct bonding to thermal oxide grown on silicon wafers. Plasma activation results in the formation of high quality bonds without exceeding 550 degrees C in the direct wafer bonding process.


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Özer, Zeynep; Altan, Hakan; Department of Physics (2016)
Terahertz Time-Domain Spectroscopy (THz-TDS) has proved to be an exceptional tool in measurements of biological and non-biological materials. The main reason why this method is preferred is that terahertz waves are typically harmless on samples due to the low excitation energy. Furthermore, one is able to extract parameters such as the absorption and refractive index easily directly from the data without using modeling. The low energy of the terahertz wave also makes it a useful tool for characterizing dyna...
Ternary-mixture grinding of ceramic raw materials
Ipek, H; Ucbas, Y; Hoşten, Çetin (Elsevier BV, 2005-01-01)
Batch experiments were carried out on the dry ball milling of commonly used ceramic raw materials quartz, kaolin and feldspar, singly and as ternary mixtures. The modified form of the Charles energy-size reduction equation was used to calculate the energy consumed by each of the components in the mixture. The results confirmed the validity of the mass fraction hypothesis for energy split between the components that had been defined and verified for the binary mixtures of equal-density minerals. The distribu...
Plasma-activated direct bonding of patterned silicon-on-insulator wafers to diamond-coated wafers under vacuum
Can, Uryan Isik; Bayram, Barış (2014-08-01)
Direct wafer bonding requires the surfaces to have low surface roughness (R-a < 0.5 nm) as well as to be free of any particles or contaminants. Meeting these requirements for wafers patterned with lithography and dry etching presents a serious problem in terms of removal of photoresist residue and etch-related particles, which would require expensive additional equipment to be removed. In this study, we propose the use of chemical mechanical polishing (CMP) to be performed after all lithography and dry etch...
Diamond-based capacitive micromachined ultrasonic transducers
Bayram, Barış (2012-02-01)
Capacitive micromachined ultrasonic transducers (CMUTs) employing diamond membranes are demonstrated. The design, finite element modeling, microfabrication, and experimental characterization of diamondbased CMUTs are reported. Ultrananocrystalline diamond having a chemical mechanical polished silicon dioxide interlayer deposited via high temperature oxide (HTO) process at 850 degrees C in a low pressure chemical vapor deposition (LPCVD) furnace is employed as the membrane to form vacuum sealed cavities usin...
Electroacoustic measurements of mixed quartz and iron oxide mineral systems
Klein, B; Altun, Naci Emre; Colebrook, M; Pawlik, M (2012-07-18)
Surface behavior of the commonly found minerals in nickel laterite ores - quartz, magnetite, hematite and goethite was investigated using electroacoustic measurements. The goal was to assess the surface potentials as single minerals and in mixed systems to understand possible interactions between particles in laterite slurries. Surface potentials were evaluated according to the electroacoustic theory with the understanding that a direct relationship existed between zeta potential and electroacoustic sonic a...
Citation Formats
B. Bayram and T. Akın, “Plasma-activated direct bonding of diamond-on-insulator wafers to thermal oxide grown silicon wafers,” DIAMOND AND RELATED MATERIALS, pp. 1431–1435, 2010, Accessed: 00, 2020. [Online]. Available: