Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals
Date
2013-01-01
Author
Isik, M.
Guler, I.
Hasanlı, Nızamı
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
232
views
0
downloads
Cite This
Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T = 7K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm(-2) range. Radiative transitions from shallow donor levels located at E-A = 0.11 and E-B = 0.15 eV below the bottom of conduction band to single shallow acceptor level located at 0.01 eV above the valence band are suggested to be responsible for the observed A- and B-bands. A simple model was proposed to interpret the recombination processes in Ga0.75In0.25Se single crystals.
Subject Keywords
Semiconductors
,
Optical properties
,
Photoluminescence
,
Defect levels
URI
https://hdl.handle.net/11511/34618
Journal
OPTICAL MATERIALS
DOI
https://doi.org/10.1016/j.optmat.2012.09.019
Collections
Department of Physics, Article
Suggestions
OpenMETU
Core
Defect characterization of cTl(4)GaIn(3)Se(2)S(6) layered single crystals by photoluminescence
Hasanlı, Nızamı (2015-10-01)
Photoluminescence (PL) spectra of Tl4GaIn3Se2S6 layered crystals grown by the Bridgman method have been studied in the energy region of 2.02-2.35 eV and in the temperature range of 16-45 K. A broad PL band centered at 2.20 eV was observed at T = 16 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.1 to 149.9 mW cm(-2) range. Radiative transitions from shallow donor level located at 10 meV below the bottom of conduction band to moderately deep acceptor level...
Low-temperature visible photolummescence and optical absorption in Tl2In2Se3S semiconductor
Güler, Işıkhan; Hasanlı, Nızamı; Turan, Raşit (2007-05-31)
The emission band spectra of undoped T1(2)In(2)Se(3)S layered crystals have been studied in the temperature range of 25-63 K and the wavelength region of 570-700nm. A broad photoluminescence band centered at 633 nm (1.96 eV) was observed at T = 25 K. Variation of emission band has been studied as a function of excitation laser intensity in the 2.7-111.4mWcm(-2) range. Radiative transitions from shallow donor level located at 0.03 eV below the bottom of conduction band to deep acceptor level located at 0.23 ...
Low-temperature photoluminescence spectra of layered semiconductor TlGaS2
Hasanlı, Nızamı; Bek, Alpan; Yılmaz, İsmail Ömer (Elsevier BV, 1998-1)
Photoluminescence (PL) spectra of TlGa& layered single crystals were studied in the wavelength region 500-860 nm and in the temperature range 9.5-293 K. We observed a total of three PL bands centered at 568 nm (2.183 eV, A-band), 718 nm (1.727 eV, B-band) and 780 nm (1.590 eV, C-band) at various temperatures. We have also studied the variations of the A- and B-band intensities vs excitation laser density in the range from 7 X 10e2 to 9 W cm-‘. The A- and B-bands were found to be due to radiative transitions...
Temperature-dependent optical properties of GaSe layered single crystals
Hasanlı, Nızamı (2016-8-01)
Optical properties of GaSe single crystals have been investigated using temperature-dependent transmission and room temperature reflection measurements in the wavelength range of 380–1100 nm. The analysis of the absorption data at room temperature showed the existence of indirect transitions in the crystal with energy band gap of 1.98 eV. Temperature dependence of the transmission measurements revealed the shift of the absorption edge toward lower energy as temperature is increased from 10 to 280 K. The rat...
Low-temperature visible photoluminescence spectra of TlGaSe2 layered crystal
Hasanlı, Nızamı; Aydinli, A; Baten, SMA (2000-02-01)
The photoluminescence (PL) spectra of TlGaSe2 layered single crystals were investigated in the 8.5-35 K temperature, 0.2-15.2 W cm(-2) excitation laser intensity, and in the 600-700 nm wavelength range. The PL spectrum has a slightly asymmetric Gaussian lineshape with a peak position located at 1.937 eV (640 nm) at 8.5 K. The PL is quenched with increasing temperature. The blue shift of the PL peak and the sublinear increase of the PL intensity with increasing laser intensity is explained using the inhomoge...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
M. Isik, I. Guler, and N. Hasanlı, “Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals,”
OPTICAL MATERIALS
, pp. 414–418, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34618.