Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals

Date

2013-01-01

Author

Isik, M.
Guler, I.
Hasanlı, Nızamı

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Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T = 7K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm(-2) range. Radiative transitions from shallow donor levels located at E-A = 0.11 and E-B = 0.15 eV below the bottom of conduction band to single shallow acceptor level located at 0.01 eV above the valence band are suggested to be responsible for the observed A- and B-bands. A simple model was proposed to interpret the recombination processes in Ga0.75In0.25Se single crystals.

Subject Keywords

Semiconductors, Optical properties, Photoluminescence, Defect levels

URI

https://hdl.handle.net/11511/34618

Journal

OPTICAL MATERIALS

DOI

https://doi.org/10.1016/j.optmat.2012.09.019

Collections

Department of Physics, Article

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Citation Formats

M. Isik, I. Guler, and N. Hasanlı, “Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals,” OPTICAL MATERIALS, pp. 414–418, 2013, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34618.