Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure

Date

2019-08-01

Author

Gullu, H. H.
Surucu, O. Bayrakli
Terlemezoğlu, Makbule
Yildiz, D. E.
Parlak, Mehmet

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

255
views

0
downloads

In this study, temperature-dependent current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements are carried out for the electrical characterization of a zinc oxide (ZnO) thin film-based diode. The sandwich structure in the form of Ag/ZnO/Si/Al is investigated at temperatures between 220 and 360 K and in the frequency region of 1 kHz-1 MHz. ZnO thin film layer is deposited on a p-Si wafer substrate as a transparent conductive oxide layer by taking into consideration possible electronic applications with intrinsic attractive material properties. At each temperature step, the I-V curves showed about two orders of magnitude rectifying behavior and, according to the Schottky diode relation, the saturation current, zero-bias barrier height and ideality factor were extracted as a function of the temperature. In the case of non-ideal diode characteristics due to the inhomogeneties in the diode as observed from the characteristics of the calculated parameters, effective barrier height values are evaluated. In addition, based on the existence of the interface layer, density of interface states in the band gap region and parasitic resistances were determined by the capacitance measurements.

Subject Keywords

Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/41012

Journal

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

DOI

https://doi.org/10.1007/s10854-019-01913-w

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

On the electrical and charge conduction properties of thermally evaporated MoOx on n- and p-type crystalline silicon GÜLNAHAR, MURAT; Nasser, Hisham; Salimi, Arghavan; Turan, Raşit (Springer Science and Business Media LLC, 2020-11-01) In this work, the electrical and charge conduction characteristics of a contact structure featuring thermally evaporated MoOx, deposited on n- and p-type crystalline silicon (c-Si), are extensively investigated by room temperature current-voltage (I-V), transmission line measurements (TLM), and temperaturedependent current-voltage measurements (I-V-T). XRD diffraction spectrum shows that the deposited MoOx film exhibits amorphous nature. From TLM measurements, the values of contact resistivity are calculate...
Characterization of GZO thin films fabricated by RF magnetron sputtering method and electrical properties of In/GZO/Si/Al diode Surucu, O. Bayrakli (Springer Science and Business Media LLC, 2019-11-01) The main focus of this work is the structural and optical characterization of Ga-doped ZnO (GZO) thin film and determination of the device behavior of In/GZO/Si/Al diode. GZO thin films were deposited by RF magnetron sputtering technique from single target. The structural and morphological properties of GZO film were investigated by X-ray diffraction (XRD), Raman scattering, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy analysis (EDS) measurements. Optical properties of the fil...
Investigation of photovoltaic properties of amorphous InSe thin film based Schottky devices Yilmaz, K.; Parlak, Mehmet; Ercelebi, C. (IOP Publishing, 2007-12-01) In this study, device behavior of amorphous InSe thin films was investigated through I-V, C-V and spectral response measurements onto SnO2/p-InSe/metal Schottky diode structures. Various metal contacts such as Ag, Au, Al, In and C were deposited onto amorphous p-InSe films by the thermal evaporation technique. The best rectifying contact was obtained in a SnO2/p-InSe/Ag Schottky structure from I-V measurements, while the Au contact had poor rectification. Other metal contacts (Al, In and C) showed almost oh...
Investigation of localized levels in GaS0.5Se0.5 layered crystals by means of electrical, space-charge limited current and photoconductivity measurements Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2002-11-16) To identify the localized levels in GaS0.5Se0.5 single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 250-400 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at 0.31 eV below the conduction band with a density of about 1.3 x 10(15) cm(-3). The conductivity data above 320 K reveal a...
Calculation of the Raman frequency shifts for the alpha phase of solid oxygen Yurtseven, Hasan Hamit (Elsevier BV, 2017-01-01) We calculate in this study the Raman frequencies of the two librons and one vibron at various pressures at constant temperatures of 10 K and also at the temperatures of 6 and 18 K by using the volume data from the literature through the mode Gruneisen parameter for the a phase of oxygen.

Citation Formats

H. H. Gullu, O. B. Surucu, M. Terlemezoğlu, D. E. Yildiz, and M. Parlak, “Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, pp. 15371–15378, 2019, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41012.