On the electrical and charge conduction properties of thermally evaporated MoOx on n- and p-type crystalline silicon

Date

2020-11-01

Author

GÜLNAHAR, MURAT
Nasser, Hisham
Salimi, Arghavan
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

236
views

0
downloads

In this work, the electrical and charge conduction characteristics of a contact structure featuring thermally evaporated MoOx, deposited on n- and p-type crystalline silicon (c-Si), are extensively investigated by room temperature current-voltage (I-V), transmission line measurements (TLM), and temperaturedependent current-voltage measurements (I-V-T). XRD diffraction spectrum shows that the deposited MoOx film exhibits amorphous nature. From TLM measurements, the values of contact resistivity are calculated to be rho(c): 55.9 mXcm(2) for Ag/MoOx/n-Si and rho(c): 48.7 m Omega-cm(2) for Ag/MoOx/p-Si. The barrier parameters such as barrier height (phi(e)) and ideality factor (n) are investigated by the thermionic emission theory for I-V and I-V-T measurements. The phi(e), n, and conventional Richardson plot demonstrate resolute temperature dependency, obeying the barrier height of Gaussian distribution model. The uniform barrier height values are calculated to be phi(b):1.24 eV for Ag/MoOx/n-Si and /b:0.66 eV for Ag/MoOx/p-Si from the extrapolation of phi(e) at n = 1 of the linear fitting of the variation with the experimental barrier height phi(e)with ideality factor. The activation energy (Ea) and Richardson constant (A*), obtained from Richardson plot, are much smaller than phi(b) and the theoretical values of n- and p-type c-Si. The modified Richardson plot yields more reliable Richardson constant and homogeneous barrier height values of 106.2 Acm(-2) K-2 and 1.21 eV, 23.4 Acm(-2) K-2 and 0.63 eV for Ag/MoOx/n-Si and Ag/MoOx/p-Si heterostructures, respectively. The results demonstrate that thermally evaporated MoOx has particular advantages due to its good rectifying characteristics such as the extra enhancement to barrier height and low contact resistivity for interfacial layer applications.

Subject Keywords

Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/69460

Journal

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

DOI

https://doi.org/10.1007/s10854-020-04884-5

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Investigation of electrical characteristics of Ag/ZnO/Si sandwich structure Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoğlu, Makbule; Yildiz, D. E.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-08-01) In this study, temperature-dependent current-voltage (I-V), frequency-dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) measurements are carried out for the electrical characterization of a zinc oxide (ZnO) thin film-based diode. The sandwich structure in the form of Ag/ZnO/Si/Al is investigated at temperatures between 220 and 360 K and in the frequency region of 1 kHz-1 MHz. ZnO thin film layer is deposited on a p-Si wafer substrate as a transparent conductive oxide layer by taking in...
Investigation of localized levels in GaS0.5Se0.5 layered crystals by means of electrical, space-charge limited current and photoconductivity measurements Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2002-11-16) To identify the localized levels in GaS0.5Se0.5 single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 250-400 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at 0.31 eV below the conduction band with a density of about 1.3 x 10(15) cm(-3). The conductivity data above 320 K reveal a...
Photoelectronic and electrical properties of InS crystals Qasrawi, AF; Hasanlı, Nızamı (IOP Publishing, 2002-12-01) To identify the localized levels in InS single crystals, the dark electrical conductivity, current-voltage characteristics and photoconductivity measurements were carried out in the temperature range of 10-350 K. Temperature dependence of dark electrical conductivity and the space-charge limited current studies indicate the presence of a single discrete trapping level located at (10 +/- 2) meV below the conduction band with a density of about 4.8 x 10(11) cm(-3). The conductivity data above 110 K reveal an ...
Characterization of GZO thin films fabricated by RF magnetron sputtering method and electrical properties of In/GZO/Si/Al diode Surucu, O. Bayrakli (Springer Science and Business Media LLC, 2019-11-01) The main focus of this work is the structural and optical characterization of Ga-doped ZnO (GZO) thin film and determination of the device behavior of In/GZO/Si/Al diode. GZO thin films were deposited by RF magnetron sputtering technique from single target. The structural and morphological properties of GZO film were investigated by X-ray diffraction (XRD), Raman scattering, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy analysis (EDS) measurements. Optical properties of the fil...
On the application of hole-selective MoOx as full-area rear contact for industrial scale p-type c-Si solar cells Nasser, Hisham; Es, Fırat; Zolfaghari Borra, Mona; Semiz, Emel; Kokbudak, Gamze; Orhan, Efe; Turan, Raşit (Wiley, 2020-11-01) We present the feasibility of integrating substoichiometric molybdenum oxide (MoOx) as hole-selective rear contact into the production sequence of industrial scale p-type crystalline silicon (c-Si) solar cells. Thin films of MoOx are deposited directly on p-type c-Si by thermal evaporation at room temperature. It is found that Ag/MoOx/p-type c-Si rear contact structure exhibits low contact resistivity and modest surface recombination current density. The attained peak efficiency (eta) of the fabricated sola...

Citation Formats

M. GÜLNAHAR, H. Nasser, A. Salimi, and R. Turan, “On the electrical and charge conduction properties of thermally evaporated MoOx on n- and p-type crystalline silicon,” JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, pp. 0–0, 2020, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/69460.