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ADSORPTION SITES OF GE ADATOMS ON STEPPED SI(110) SURFACE
Date
1994-05-20
Author
Katırcıoğlu, Şenay
ERKOC, S
Metadata
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We have investigated the possible adsorption sites of Ge adatoms on stepped Si(110) surface by total electronic energy calculations using the empirical tight-binding method. It has been found that Ge adatoms prefer to bond to the Si atoms at or near the step. In the case of more than one adatom the minimum total electronic energy configuration corresponds to the maximum number of saturated Si atoms.
Subject Keywords
Layer
,
Growth
,
Si(001)
,
Si
,
FIlms
,
111 surfaces
URI
https://hdl.handle.net/11511/41114
Journal
SURFACE SCIENCE
DOI
https://doi.org/10.1016/0039-6028(94)91412-5
Collections
Department of Physics, Article