ADSORPTION SITES OF GE ADATOMS ON STEPPED SI(110) SURFACE

Date

1994-05-20

Author

Katırcıoğlu, Şenay

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

116
views

0
downloads

We have investigated the possible adsorption sites of Ge adatoms on stepped Si(110) surface by total electronic energy calculations using the empirical tight-binding method. It has been found that Ge adatoms prefer to bond to the Si atoms at or near the step. In the case of more than one adatom the minimum total electronic energy configuration corresponds to the maximum number of saturated Si atoms.

Subject Keywords

Layer, Growth, Si(001), Si, FIlms, 111 surfaces

URI

https://hdl.handle.net/11511/41114

Journal

SURFACE SCIENCE

DOI

https://doi.org/10.1016/0039-6028(94)91412-5

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Adsorption and dissociation of PH3 on SiGe(100) (2x1) surface Turkmenoglu, Mustafa; Katırcıoğlu, Şenay (World Scientific Pub Co Pte Lt, 2008-06-01) The most stable structures for the adsorption and dissociation of phosphine (PH3) on SiGe(100) (2 x 1) surface have been investigated by relative total energy calculations based on density functional theory. According to the optimization calculations, PH3 is adsorbed on the Si (down) and Ge (down) site of the Ge-Si and Ge-Ge dimers on SiGe surface, respectively. The PH2 and H products have been found to be thermodynamically favored in the dissociation path of PH3 on SiGe surface when the system is thermally...
Adsorption of gold atoms on anatase TiO2 (100)-1x1 surface Vural, Kıvılcım Başak; Ellialtıoğlu, Süleyman Şinasi; Department of Physics (2009) In this work the electronic and structural properties of anatase TiO2 (100) surface and gold adsorption have been investigated by using the first-principles calculations based on density functional theory (DFT). TiO2 is a wide band-gap material and to this effects it finds numerous applications in technology such as, cleaning of water, self-cleaning, coating, solar cells and so on. Primarily, the relation between the surface energy of the anatase (100)-1x1 phase and the TiO2-layers is examined. After an app...
SIMULATION CALCULATIONS FOR GOLD CLUSTERS ON THE GAAS(110) SURFACE Erkoç, Şakir; HALICIOGLU, T; TILLER, WA (1992-08-15) Energy- and structure-related properties of small gold clusters deposited on the GaAs(110) surface were investigated in this work using a molecular dynamics procedure. A recently developed potential energy function based on two- and three-body interactions was employed in calculating energies and forces. These calculations produced some consistent results with experiments. The three-body interactions involving As atoms in particular, were found to play an important role in determining favorable binding site...
Energetics of arsenic terminated GaAs(001) surfaces Erkoç, Şakir; Kokten, H (2000-09-01) We have investigated systematically the energetics of arsenic terminated GaAs(001) surfaces, Available surface models proposed in the literature have been considered, and relaxation and surface energies of each model have been calculated using an empirical many-body potential energy function comprising two and three-body atomic interactions.
Adsorption of oxygen and hydrogen on stepped Si(100) surface Salman, SA; Katırcıoğlu, Şenay (1999-06-01) We have investigated the electronic band structure of oxygen and hydrogen adsorbed stepped Si(100) surface using the empirical tight binding method (ETB). The total electronic energies of the O-stepped and H-stepped Si(100) systems are calculated with a limited number of oxygen and hydrogen atoms separately to find out the most probable adsorption sites of the adatoms in the initial stage of oxidation and hydrogenation.

Citation Formats

Ş. Katırcıoğlu, “ADSORPTION SITES OF GE ADATOMS ON STEPPED SI(110) SURFACE,” SURFACE SCIENCE, pp. 0–0, 1994, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41114.