ADSORPTION SITES OF GE ADATOMS ON STEPPED SI(110) SURFACE

Date

1994-05-20

Author

Katırcıoğlu, Şenay
ERKOC, S

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We have investigated the possible adsorption sites of Ge adatoms on stepped Si(110) surface by total electronic energy calculations using the empirical tight-binding method. It has been found that Ge adatoms prefer to bond to the Si atoms at or near the step. In the case of more than one adatom the minimum total electronic energy configuration corresponds to the maximum number of saturated Si atoms.

Subject Keywords

Layer, Growth, Si(001), Si, FIlms, 111 surfaces

URI

https://hdl.handle.net/11511/41114

Journal

SURFACE SCIENCE

DOI

https://doi.org/10.1016/0039-6028(94)91412-5

Collections

Department of Physics, Article

Citation Formats

Ş. Katırcıoğlu and S. ERKOC, “ADSORPTION SITES OF GE ADATOMS ON STEPPED SI(110) SURFACE,” SURFACE SCIENCE, vol. 311, no. 3, pp. 0–0, 1994, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41114.