Defect characterization of Ga4Se3S layered single crystals by thermoluminescence

Date

2016-04-01

Author

IŞIK, MEHMET
Delice, S.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

166
views

0
downloads

Trapping centres in undoped Ga4Se3S single crystals grown by Bridgman method were characterized for the first time by thermoluminescence (TL) measurements carried out in the low-temperature range of 15-300 K. After illuminating the sample with blue light (similar to 470 nm) at 15 K, TL glow curve exhibited one peak around 74 K when measured with a heating rate of 0.4 K/s. The results of the various analysis methods were in good agreement about the presence of one trapping centre with an activation energy of 27 meV. Analysis of curve fitting method indicated that mixed order of kinetics dominates the trapping process. Heating rate dependence and distribution of the traps associated with the observed TL peak were also studied. The shift of peak maximum temperature from 74 to 113 K with increasing rate from 0.4 to 1.2 K/s was revealed. Distribution of traps was investigated using an experimental technique based on cleaning the centres giving emission at lower temperatures. Activation energies of the levels were observed to be increasing from 27 to 40 meV by rising the stopping temperature from 15 to 36 K.

Subject Keywords

Thermoluminescence, Semiconductors, Defects

URI

https://hdl.handle.net/11511/47664

Journal

PRAMANA-JOURNAL OF PHYSICS

DOI

https://doi.org/10.1007/s12043-015-1081-x

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Low-temperature thermoluminescence in TlGaS2 layered single crystals Isik, M.; Bulur, Enver; Hasanlı, Nızamı (2013-03-01) Thermoluminescence (TL) measurements have been carried out on TlGaS2 layered single crystals in the temperature range of 10-300 K. After illuminating with blue light (similar to 470 nm) at 10 K, TL glow curves exhibited peaks around 23, 36, 58, 75 and 120 K when measured with a heating rate of 0.8 K/s. The observed peaks were analyzed using curve fitting, initial rise, and peak shape methods to determine the activation energies of the associated defect centers. Analyses have revealed the presence of five de...
Low-temperature thermoluminescence in layered structured Ga0.75In0.25Se single crystals Isik, M.; Bulur, Enver; Hasanlı, Nızamı (2012-12-25) Defect centers in Ga0.75In0.25Se single crystals have been studied performing the thermoluminescence measurements in the temperature range of 10-300 K. The observed glow curves were analyzed using curve fitting, initial rise, and different heating rate methods to determine the activation energies of the defect centers. Thermal cleaning process has been applied to decompose the overlapped curves. Four defect centers with activation energies of 9, 45,54 and 60 meV have been found as a result of the analysis. ...
Defect characterization of cTl(4)GaIn(3)Se(2)S(6) layered single crystals by photoluminescence Hasanlı, Nızamı (2015-10-01) Photoluminescence (PL) spectra of Tl4GaIn3Se2S6 layered crystals grown by the Bridgman method have been studied in the energy region of 2.02-2.35 eV and in the temperature range of 16-45 K. A broad PL band centered at 2.20 eV was observed at T = 16 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.1 to 149.9 mW cm(-2) range. Radiative transitions from shallow donor level located at 10 meV below the bottom of conduction band to moderately deep acceptor level...
Analysis of glow curve of GaS0.5Se0.5 single crystals IŞIK, MEHMET; Delice, Serdar; Hasanlı, Nızamı (2015-12-01) Characterization of shallow trapping centers in GaS0.5Se0.5 crystals grown by a Bridgman method was carried out in the present work using thermoluminescence (TL) measurements performed in the low temperature range of 10-300 K. The activation energies of the trapping centers were obtained under the light of results of various analysis methods. The presence of three trapping centers located at 6, 30 and 72 meV was revealed. The analysis of the experimental glow curve gave reasonable results under the model th...
Defect characterization in neodymium doped thallium indium disulfide crystals by thermoluminescence measurements Delice, S.; Hasanlı, Nızamı (2016-10-15) Characteristics of defect centers in neodymium doped TlInS2 single crystals have been investigated in virtue of thermoluminescence measurements carried out at low temperatures (10-300 K) with various heating rates between 0.4 and 1.2 K s(-1). One glow peak was detected with peak maximum temperature of 26 K at a rate of 0.4 K s(-1). The observed glow peak was analyzed using three points and heating rate methods. The analysis results revealed the presence of one trap level with activation energy of 14 meV. Th...

Citation Formats

M. IŞIK, S. Delice, and N. Hasanlı, “Defect characterization of Ga4Se3S layered single crystals by thermoluminescence,” PRAMANA-JOURNAL OF PHYSICS, pp. 893–900, 2016, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/47664.