The effect of Ga/In ratio and annealing temperature on the nonlinear absorption behaviors in amorphous TlGaxIn(1-x)S2 (0 ≤ x ≤ 1) chalcogenide thin films

Date

2020-08-01

Author

Ünlü, Bekir Asilcan
Karatay, Ahmet
Yüksek, Mustafa
Ünver, Hüseyin
Hasanlı, Nızamı
Elmali, Ayhan

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

223
views

0
downloads

The amorphous semiconductor TlGaxIn(1-x)S2 (0 <= x <= 1) chalcogenide thin films were prepared with 70 nm thicknesses by using vacuum evaporation technique. The nonlinear absorption properties of the films were studied by Z-scan technique. The energy band gap values were calculated by using linear absorption spectra. The effect of Ga/In ratio leads to increase 0.22 eV in band gap energy. To derive the transmission in open aperture Z-scan data, a theoretical model incorporating two photon and free carrier absorptions and their saturations were considered and effective nonlinear absorption coefficients and saturation intensity thresholds extracted from the fitting of the experimental results. Highest effective nonlinear absorption coefficient was found for TlInS2 sample due to having the smallest energy bandgap. In an attempt to investigate the effect of localized defect states on the nonlinear absorption, TlGaS2 thin films were annealed up to 473 K. It was found that increasing annealing temperature leads to reduction of the localized defect states. Nonlinear absorption coefficient and saturation intensity threshold decrease with reduction of the localized defect states.

Subject Keywords

Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials

URI

https://hdl.handle.net/11511/41562

Journal

Optics and Laser Technology

DOI

https://doi.org/10.1016/j.optlastec.2020.106230

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

THE EFFECT OF A 3RD COMPONENT IMPURITY-C ON THE HEAT-CAPACITY OF A3B-TYPE ORDERED ALLOYS Mehrabov, Amdulla; MATYSINA, ZA (Wiley, 1989-12-01) For the first time theoretical (in terms of the classical theory of ordering) and experimental (with the adiabatic calorimeter method) investigations are made of the effect of a third component impurity C on the heat capacity of A3B‐type ordered alloys with FCC structure. The effect of the impurities Mn, Cr, Mo, or W on the heat capacity of Ni3Fe alloys is analysed as an example. The comparison of the theoretical results with the experimental data shows good qualitative agreement.
On the electrical and charge conduction properties of thermally evaporated MoOx on n- and p-type crystalline silicon GÜLNAHAR, MURAT; Nasser, Hisham; Salimi, Arghavan; Turan, Raşit (Springer Science and Business Media LLC, 2020-11-01) In this work, the electrical and charge conduction characteristics of a contact structure featuring thermally evaporated MoOx, deposited on n- and p-type crystalline silicon (c-Si), are extensively investigated by room temperature current-voltage (I-V), transmission line measurements (TLM), and temperaturedependent current-voltage measurements (I-V-T). XRD diffraction spectrum shows that the deposited MoOx film exhibits amorphous nature. From TLM measurements, the values of contact resistivity are calculate...
The nonlinear and saturable absorption characteristics of Ga0.90In0.10Se and Ga0.85In0.15Se semiconductor crystals and their amorphous thin films KARATAY, AHMET; Aksoy, Cagla; YAĞLIOĞLU, HALİME GÜL; ELMALI, Ayhan; Kurum, Ulas; ATEŞ, AYTÜNÇ; Hasanlı, Nızamı (IOP Publishing, 2011-07-01) We investigated the nonlinear and saturable absorption characteristics of Ga0.90In0.10Se and Ga0.85In0.15Se semiconductor crystals and their very thin amorphous films by open aperture (OA) Z-scan and pump-probe techniques. The linear absorption spectra indicated a blue shift in energy with increasing film thickness. This can be attributed to the quantum confinement effect. For both 4 ns and 65 ps pulse durations the two photon absorption coefficients of Ga0.90In0.10Se and Ga0.85In0.15Se crystals increased w...
Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy Altan, Hakan; Pham, D.; Grebel, H.; Federici, J. F. (IOP Publishing, 2007-05-01) The effect of high-kappa dielectric HfO2 films on 200 mm diameter p-type silicon substrates was investigated and compared with conventional dielectric material, SiO2. We employed all-optical characterization methods using terahertz (THz) time-domain spectroscopy and visible cw pump/THz probe spectroscopy. Measurements were performed on two sets of samples, each set containing both HfO2 and SiO2 coated wafers with varying thickness of oxide layer. One set had a protective coating of either photoresist or Si3...
A numerically stable algorithm for scattering from several circular cylinders including metamaterials with different boundary conditions SEVER, EMRAH; DİKMEN, FATİH; TUCHKİN, YURY ALEXANDEROVİCH; Sabah, Cumali (Elsevier BV, 2018-01-01) The analytically obtained algebraic equation systems for the TM/TE-z polarized monochromatic waves scattering from eccentrically layered circular cylinders are ill-conditioned for numerical calculations. Therefore, such ill conditioned systems must be regularized for reliable numerical results. Here, the steps of the regularization of the ill conditioned system obtained for the scattered field from a circular metamaterial cylinder includes three parallel circular cylinders: a dielectric, an impedance and a ...

Citation Formats

B. A. Ünlü, A. Karatay, M. Yüksek, H. Ünver, N. Hasanlı, and A. Elmali, “The effect of Ga/In ratio and annealing temperature on the nonlinear absorption behaviors in amorphous TlGaxIn(1-x)S2 (0 ≤ x ≤ 1) chalcogenide thin films,” Optics and Laser Technology, pp. 0–0, 2020, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41562.