Analysis of the Hall effect in TlGaTe2 single crystals

Hasanlı, Nızamı
The electrical resistivity and Hall coefficient of p-type TlGaTe2 crystals were measured in the temperature range of 110-320 K. The electrical resistivity, charge carrier density and Hall mobility data for the crystals have been analyzed by means of existing theories and models to determine the extrinsic energy levels, the carrier effective mass, the donor and acceptor concentrations and the dominant scattering mechanism in the crystal as well. The analysis of the temperature-dependent electrical resistivity recorded parallel and perpendicular to the crystal's axis ( c-axis) reflected the existence of energy levels located at 0.26 and at 0.20 eV, respectively. The difference of these two energy levels is due to crystal anisotropy. The energy level at 0.26 eV was found to represent an acceptor level, as confirmed from Hall data analysis. The temperature dependence of the carrier density was analyzed by using the single-donor-single-acceptor model. The latter analysis revealed the carrier effective mass and the acceptor and donor concentrations as 0.73m(0), 4.10 x 10(17) cm(-3) and 1.20 x 10(17) cm(-3), respectively. The Hall mobility of TlGaTe2 is found to be limited by the scattering of hole-acoustic phonon interactions. The calculated theoretical mobility fits to the experimental one under the condition that the acoustic deformation potential is 11.0 eV, which is the energy position of the top of valence band maximum that is formed by the Te 5s states.


Investigation of carrier scattering mechanisms in TIInS2 single crystals by Hall effect measurements
Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2004-05-01)
TlInS2 single crystals are studied through the conductivity and Hall effect measurements in the temperature regions of 100-400 and 170-400 K, respectively. An anomalous behavior of Hall voltage, which changes sign below 315 K, is interpreted through the existence of deep donor impurity levels that behave as acceptor levels when are empty. The hole and electron mobility are limited by the hole- and electron-phonon short range interactions scattering above and below 315 K, respectively. An energy level of 35 ...
Comparison of the short and long-term degradation behaviors of as-cast pure Mg, AZ91 and WE43 alloys
Ocal, Ezgi Butev; ESEN, ZİYA; Aydınol, Mehmet Kadri; Dericioğlu, Arcan Fehmi (Elsevier BV, 2020-02-01)
The corrosion behaviors of pure magnesium, AZ91, and WE43 alloys have been evaluated by weight loss, hydrogen evolution rate, pH change measurements and potentiodynamic polarization as well as electrochemical impedance spectroscopy (EIS) methods. Main corrosion product formed on the surface of Mg/Mg-alloys after immersion of 24 h was Mg(OH)(2) on the other hand, at the end of the 20 days additional CaCO3 which was found to display a critical role in degradation characteristics of the samples, was found. Exa...
Electron-lattice interaction scattering mobility in Tl(2)InGaSe(4) single crystals
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (IOP Publishing, 2008-04-16)
In this work, the dark electrical resistivity, charge carrier density and Hall mobility of Tl(2)InGaSe(4) single crystal have been recorded and analyzed to investigate the dominant scattering mechanism in the crystal. The data analyses have shown that this crystal exhibits an extrinsic n-type conduction. The temperature-dependent dark electrical resistivity analysis reflected the existence of two energy levels as 0.396 and 0.512 eV, being dominant above and below 260 K, respectively. The temperature depende...
Study of trapping and recombination centres in Tl2InGaTe4 chain crystals by dark electrical conductivity and photoconductivity measurements
QASRAWI, ATEF FAYEZ HASAN; Hasanlı, Nızamı (Informa UK Limited, 2007-01-01)
Dark electrical conductivity and photoconductivity of Tl2InGaTe4 single crystals have been measured and analyzed in the temperature region 100-300 K. The dark electrical conductivity measurements revealed an intrinsic- or extrinsic-type of conductivity above or below 210 K, respectively. From intrinsic conductivity data analysis, the energy band gap of Tl2InGaTe4 crystals was determined as 0.85 eV. In the extrinsic region, the dark conductivity arises from a donor energy level located at 0.30 eV below the c...
Visible photoluminescence from chain Tl4In3GaSe8 semiconductor
Hasanlı, Nızamı (IOP Publishing, 2006-07-05)
The emission band spectra of undoped Tl4In3GaSe8 chain crystals have been studied in the 16-300 K temperature range and the 535-740 nm wavelength range. Two visible photoluminescence bands centred at 589 and 633 nm were observed at T = 16 K. Variations of both bands have been investigated over a wide range of laser excitation intensity ( 3 x 10(-4) -1.2 W cm(-2)). Radiative transitions with energies of 2.10 and 1.96 eV from two upper conduction bands to two shallow acceptor levels (0.03 and 0.01 eV), respec...
Citation Formats
A. F. H. QASRAWI and N. Hasanlı, “Analysis of the Hall effect in TlGaTe2 single crystals,” JOURNAL OF PHYSICS-CONDENSED MATTER, pp. 0–0, 2009, Accessed: 00, 2020. [Online]. Available: