INFRARED REFLECTIVITY SPECTRA OF TLGAS2-TYPE LAYER CRYSTALS

Date

1982-01-01

Author

Hasanlı, Nızamı
RAGIMOV, AS
TAGIROV, VI
GUSEINOV, RE

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

199
views

0
downloads

Infrared reflectivity spectra of TIGaS2, TIGaSe2 and TlInS2 layer crystals are measured for the polarization directions perpendicular and parallel to the optical c-axis in the spectral range from 20 to 400 cm-1. The optical dispersion parameters are obtained for both polarization directions. Besides, normal coordinates and effective force constants are determined for high-frequency lattice vibrations.

Subject Keywords

General Engineering

URI

https://hdl.handle.net/11511/41762

Journal

PHYSICA B & C

DOI

https://doi.org/10.1016/0378-4363(82)90133-4

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

DIRECTIONAL DEPENDENCE OF EXTRAORDINARY INFRARED OSCILLATOR PARAMETERS OF TLGAS2-TYPE LAYER CRYSTALS Hasanlı, Nızamı; TAGIROV, VI (Elsevier BV, 1983-01-01) The directional dispersion of IR-active modes of TlGaS2, TlGaSe2 and TlInS2 layersingle crystals has been investigated, depending on the angle between the phonon wave vector q and the optical c-axis. Owing to the possibility of preparation crystals with various orientations of reflecting surfaces with respect to the optical c-axis, it was of interest to check the applicability of the generalized Born and Huang theory of long-wave optical vibrations in uniaxial crystals to TlGaS2-type layer crystals.
Optical absorption and reflection studies of Tl4InGa3S8 layered single crystals Goksen, K.; Hasanlı, Nızamı; Ozkan, H. (Institute of Physics, Polish Academy of Sciences, 2007-07-01) The optical properties of Tl4InGa3S8 layered single crystals have been studied by means of transmission and reflection measurements in the wavelength region between 400 and 1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 2.40 and 2.61 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed the rate of change of the indirect band gap with temperature as g...
Electrochemical Formation of Brazing Alloys on Metal Substrates Ulu, F.; Karakaya, İshak; Demirci, G.; ERDOĞAN, MUSTAFA (2013-11-01) CusilTM is a eutectic brazing alloy of 72% silver, 28% copper composition; used to join different materials. The large difference between the standard reduction potentials of silver (0.799V) and copper (0.337V) makes their electrochemical codeposition difficult. A complex ion bath containing KAg(CN)2, CuCN and KCN was used to bring the reduction potentials closer together. The effect of electrolyte concentration on composition and microstructure of electrodeposited Ag-Cu films was investigated at 25oC. A cu...
Temperature-tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals Hasanlı, Nızamı (Wiley, 2009-03-01) The optical properties of Tl2InGaSe4 layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500-1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10-300 K revealed that the rate of change of the indirect band gap with temperature is gamma = -4...
CMOS planar spiral inductor modeling and low noise amplifier design Telli, A; Demir, S; Askar, M (Elsevier BV, 2006-01-01) During this study, various narrowband single-ended inductive source degenerated Low Noise Amplifiers (LNAs) for GSM and S-band low earth orbit (LEO) space applications have been designed, simulated and compared using Mietec CMOS 0.7 mu m process and the Cadence/BSIM3v3. To get more realistic results, parasitic effects due to layout have been calculated and added to the simulations. Also, considering the inductive source degenerative topology, most of the attention is given on the modeling of planar spiral i...

Citation Formats

N. Hasanlı, A. RAGIMOV, V. TAGIROV, and R. GUSEINOV, “INFRARED REFLECTIVITY SPECTRA OF TLGAS2-TYPE LAYER CRYSTALS,” PHYSICA B & C, pp. 78–82, 1982, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41762.