A readout circuit for QWIP infrared detector arrays using current mirroring integration

Date

2003-09-18

Author

Tepegoz, M
Akın, Tayfun

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

269
views

0
downloads

This paper reports a current mirroring integration (CMI) CMOS readout circuit for high-resolution Quantum Well Infrared Photodetectors (QWIPs). The circuit uses a feedback structure with current mirrors to provide stable bias voltage across the photodetectors, which can be adjusted between 0 V and 3.5V. The photodetector current is mirrored to an integration capacitor which can be placed outside of the unit pixel, reducing the pixel area and allowing to integrate the current on larger capacitances for larger charge storage capacity and dynamic range. With the current feedback in the CMI structure, very low (ideally zero) input impedance is achieved. The readout circuit integrated with CMI provides a maximum charge storage capacity of 170x10(6) electrons and a maximum transimpedance of 17.6x10(6) for a 5 V power supply and 6.8 pF off-pixel integration capacitance. A 64x64 FPA circuit prototype has been implemented in a 0.8 mum CMOS process and hybrid connected to a 64x64 QWIP FPA. The fabricated chip has 38 mum pixel pitch and results in a total chip area of 3.2mmx4.0mm. The operation of the fabricated circuit together with QWIP FPA is verified. The measured dynamic range of the circuit is more than 96 dB for maximum charge storage case and non-linearity of the circuit is smaller than 4 Least Significant Bit (LSB) for 10-bit resolution.

Subject Keywords

Infrared detectors, Sensor arrays, Photodetectors, Capacitance, Dynamic range, Feedback circuits, Mirrors, Voltage, Capacitors, Impedance

URI

https://hdl.handle.net/11511/41812

DOI

https://doi.org/10.1109/esscirc.2003.1257090

Collections

Department of Electrical and Electronics Engineering, Conference / Seminar

Suggestions

OpenMETU
Core

A current mirroring integration based readout circuit for high performance infrared FPA applications Külah, Haluk; Akın, Tayfun (2003-04-01) This paper reports a current mirroring integration (CMI) CMOS readout circuit for high-resolution infrared focal plane array (FPA) applications. The circuit uses a feedback structure with current mirrors to provide stable bias voltage across the photodetector diode, while mirroring the diode current to an integration capacitor. The integration capacitor can be placed outside of the unit pixel, reducing the pixel area and allowing to integrate the current on larger capacitance for larger charge storage capac...
A CMOS current mirroring integration readout structure for infrared focal plane arrays Külah, Haluk; Akın, Tayfun (1998-09-24) This paper reports a new, high performance CMOS readout structure, called Current Mirroring Integration (CMI), for high-resolution infrared Focal Plane Array (FPA) applications. Using the integration capacitance outside the FPA, the unit cell area is decreased, making the circuit suitable for high-resolution applications. Moreover, the readout circuit offers high injection efficiency, perfect (almost-zero) detector bias, and large dynamic range in a small pixel area. The circuit provides a maximum charge st...
A low-cost 128x128 uncooled infrared detector array in CMOS process Eminoglu, Selim; Tanrikulu, Mahmud Yusuf; Akın, Tayfun (2008-02-01) This paper discusses the implementation of a low-cost 128 x 128 uncooled infrared microbolometer detector array together with its integrated readout circuit (ROC) using a standard 0.35 mu m n-well CMOS and post-CMOS MEMS processes. The detector array can be created with simple bulk-micromachining processes after the CMOS fabrication, without the need for any complicated lithography or deposition steps. The array detectors are based on suspended p(+)-active/n-well diode microbolometers with a pixel size of 4...
A low-cost small pixel uncooled infrared detector for large focal plane arrays using a standard CMOS process Eminoglu, S; Tanrikulu, MY; Tezcan, DS; Akın, Tayfun (2002-04-03) This paper reports the development of a low-cost, small pixel uncooled infrared detector using a standard CMOS process. The detector is based on a suspended and thermally isolated p(+)-active/n-well diode whose forward voltage changes due to an increase in the pixel temperature with absorbed infrared radiation. The detector is obtained with simple post-CMOS etching steps on dies fabricated using a standard n-well CMOS process. The post-CMOS process steps are achieved without needing any deposition or lithog...
A CMOS switched-capacitor interface circuit for an integrated accelerometer Külah, Haluk; Najafi, K (2000-01-01) This paper presents a CMOS interface electronics for monolithic micromachined capacitive accelerometer systems. The interface electronics is a fully differential switched-capacitor charge integrator with its internal clock generator and sensor feedback circuit for closed-loop operation. The circuit is designed for open-loop and closed-loop operations, and provides both digital and differential analog outputs. One of the main advantages of this chip is that it can be monolithically integrated with the sensor...

Citation Formats

M. Tepegoz and T. Akın, “A readout circuit for QWIP infrared detector arrays using current mirroring integration,” 2003, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/41812.