A CMOS switched-capacitor interface circuit for an integrated accelerometer

Külah, Haluk
Najafi, K
This paper presents a CMOS interface electronics for monolithic micromachined capacitive accelerometer systems. The interface electronics is a fully differential switched-capacitor charge integrator with its internal clock generator and sensor feedback circuit for closed-loop operation. The circuit is designed for open-loop and closed-loop operations, and provides both digital and differential analog outputs. One of the main advantages of this chip is that it can be monolithically integrated with the sensor, resulting in a considerably increased sensor module performance by decreasing the overall system area, minimizing the interface parasitics, and simplifying the packaging. The interface electronics operates at 200kHz sampling clock and provides an adjustable sensitivity between 0.3 and 1.2V/pF with better than 100aF expected resolution resulting in a 93dB dynamic range for 1Hz bandwidth. The total chip dissipates less than 7.2mW power from a single 5V supply, and occupies an area of 3.4x3.6 mm(2) in 3 mum one-metal two-poly p-well CMOS process of University of Michigan.


A self-powered integrated interface circuit for low power piezoelectric energy harvesters
Chamanian, S.; Zorlu, O.; Külah, Haluk; Muhtaroglu, A. (2013-12-18)
This paper presents a CMOS integrated interface circuit for piezoelectric energy harvesters (PEH). A fully self-powered circuit, based on Synchronous Electric Charge extraction (SECE) technique, is implemented for non-resonant piezoelectric harvesters generating low power, in 10s to 100s mu W range. The circuit is realized in standard 180 nm UMC CMOS technology. A switch control circuit is designed and optimized to extract maximum power independently from excitation changes of the PEH. The total power loss ...
A CMOS visible image sensor array using current mirroring integration readout circuitry
Akbay, Selim Sermet; Bircan, A.; Akın, Tayfun (null; 2000-08-30)
This paper reports the development of a CMOS visible sensor array using a high performance readout circuit called Current Mirroring Integration (CMI). The sensor element is a photodiode implemented using n-well and p+ -active layers available in any CMOS process. The current generated by optical excitation is mirrored and integrated in an off-pixel capacitor using the CMI readout circuit, which provides high injection efficiency, low input impedance, almost-zero and stable detector bias, and a high dynamic ...
A readout circuit for QWIP infrared detector arrays using current mirroring integration
Tepegoz, M; Akın, Tayfun (2003-09-18)
This paper reports a current mirroring integration (CMI) CMOS readout circuit for high-resolution Quantum Well Infrared Photodetectors (QWIPs). The circuit uses a feedback structure with current mirrors to provide stable bias voltage across the photodetectors, which can be adjusted between 0 V and 3.5V. The photodetector current is mirrored to an integration capacitor which can be placed outside of the unit pixel, reducing the pixel area and allowing to integrate the current on larger capacitances for large...
A 1024x768-12 mu m digital ROIC for uncooled microbolometer FPAs (Conference Presentation)
Akın, Tayfun (2017-04-13)
This paper reports the development of a new digital microbolometer Readout Integrated Circuit (D-ROIC), called MT10212BD. It has a format of 1024 × 768 (XGA) and a pixel pitch of 12μm. MT10212BD is Mikro Tasarim’s second 12μm pitch microbolometer ROIC, which is developed specifically for surface micro machined microbolometer detector arrays with small pixel pitch using high-TCR pixel materials, such as VOx and a Si. MT10212BD has an alldigital system on-chip architecture, which generates programmable timing...
A low-cost uncooled infrared detector array and its camera electronics
Akçören, Dinçay; Akın, Tayfun; Eminoğlu, Selim; Department of Electrical and Electronics Engineering (2011)
This thesis presents the development of integrated readout electronics for diode type microbolometers and development of external camera electronics for microbolometers. The developed readout electronics are fabricated with its integrated 160x120 resolution FPA (Focal Plane Array) in the XFAB SOI-CMOS 1.0 μm process. The pixels in the FPA have 70 μm pixel pitch, and they are sensitive in the 8–12 μm band of the infrared spectrum. Each pixel has 4 serially connected diodes, and diode turn on voltage changes ...
Citation Formats
H. Külah and K. Najafi, “A CMOS switched-capacitor interface circuit for an integrated accelerometer,” 2000, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/53863.