Trap characterization by photo-transferred thermoluminescence in MgO nanoparticles

Hasanlı, Nızamı
Shallow trapping centers in MgO nanoparticles were characterized using photo-transferred thermoluminescence (TL) measurements. Experiments were carried out in low temperature range of 10-280 K with constant heating rate. Shallow traps were filled with charge carriers firstly by irradiating the sample at room temperature using S-90/Y-90 source and then illuminating at 10 K using blue LED. TL glow curve exhibited one peak around 150 K. Curve fitting analyses showed that this peak is composed of two individual peaks with maximum temperatures of 149.0 and 155.3 K. The activation energies of corresponding trapping centers were revealed as 0.70 and 0.91 eV. The dominant mechanism for TL process was found as second order kinetics which represent that fast retrapping is effective transitions taking place within the band gap. Structural characterization of MgO nanoparticles were investigated using x-ray diffraction, scanning electron microscopy and Fourier transform infrared spectroscopy measurements. Analyses of experimental observations indicated that MgO nanoparticles show good crystallinity with particle size in nanometer scale.


Characteristics of HfO2 and SiO2 on p-type silicon wafers using terahertz spectroscopy
Altan, Hakan; Pham, D.; Grebel, H.; Federici, J. F. (IOP Publishing, 2007-05-01)
The effect of high-kappa dielectric HfO2 films on 200 mm diameter p-type silicon substrates was investigated and compared with conventional dielectric material, SiO2. We employed all-optical characterization methods using terahertz (THz) time-domain spectroscopy and visible cw pump/THz probe spectroscopy. Measurements were performed on two sets of samples, each set containing both HfO2 and SiO2 coated wafers with varying thickness of oxide layer. One set had a protective coating of either photoresist or Si3...
Trapping center parameters of TlGaSe2 layered crystals
Yuksek, NS; Kavas, H; Hasanlı, Nızamı; Ozkan, H (Elsevier BV, 2004-02-15)
Thermally stimulated current measurements are carried out on as-grown TlGaSe2 layered single crystals in the temperature range of 90-220 K with various heating rates. Experimental evidence is found for the presence of two trapping centers with activation energy 98 and 130 meV. The retrapping process is negligible for these levels, as confirmed by good agreement between the experimental results and theoretical predictions of the model that assumes slow retrapping. The calculation yielded 2.3 x 10(-24) and 1....
Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode
Yigiterol, F.; Güllü, Hasan Hüseyin; Bayraklı, Özge; YILDIZ, DİLBER ESRA (Springer Science and Business Media LLC, 2018-05-01)
Electrical characteristics of the Au/Si3N4/4H n-SiC metal–insulator-semiconductor (MIS) diode were investigated under the temperature, T, interval of 160–400 K using current–voltage (I–V), capacitance–voltage (C−V) and conductance–voltage (G/ω−V) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height (ΦB0) and ideality factor (n) were calculated according to the thermionic emission (TE) from forward bias I–V analysis in the whole working T. Experimental results showed that the valu...
Electroluminescence generated by a metal oxide semiconductor light emitting diode (MOS-LED) with Si nanocrystals embedded in SiO2 layers by ion implantation
Kulakci, M.; Serincan, U.; Turan, Raşit (IOP Publishing, 2006-12-01)
Electroluminescence ( EL) and photoluminescence ( PL) measurements were conducted on Si-implanted SiO2 layers as a function of process and measurement parameters. Measurable light emission was observed from the metal oxide semiconductor light emitting diode ( MOS-LED) when holes are injected from the substrate. It was shown that major PL and EL emissions have the same origin. However, two important differences were observed between EL and PL spectra. The first one is the light emission from the Si substrate...
Gas source molecular beam epitaxy growth and characterization of Ga0.51In0.49P/InxGa1-xAs/GaAs modulation-doped field-effect transistor structures
Beşikci, Cengiz; Ozder, S; Sen, O; Jelen, C; Slivken, S; Razeghi, M (IOP Publishing, 1997-11-01)
Lattice-matched Ga0.51In0.49P/GaAs and strained Ga0.51In0.49P/InxGa1-xAs/GaAs (0.1 less than or equal to x less than or equal to 0.25) modulation-doped field-effect transistor structures were grown by gas source molecular beam epitaxy by using Si as dopant. Detailed electrical characterization results are presented, The Ga0.5In0.49P/In0.25Ga0.75As/GaAs sample yielded dark two-dimensional electron gas densities of 3.75 x 10(12) cm(-2) (300 K) and 2.3 x 10(12) cm(-2) (77 K) which are comparable to the highest...
Citation Formats
M. IŞIK and N. Hasanlı, “Trap characterization by photo-transferred thermoluminescence in MgO nanoparticles,” PHYSICA B-CONDENSED MATTER, pp. 301–305, 2018, Accessed: 00, 2020. [Online]. Available: