Electroluminescence generated by a metal oxide semiconductor light emitting diode (MOS-LED) with Si nanocrystals embedded in SiO2 layers by ion implantation

Date

2006-12-01

Author

Kulakci, M.
Serincan, U.
Turan, Raşit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

206
views

0
downloads

Electroluminescence ( EL) and photoluminescence ( PL) measurements were conducted on Si-implanted SiO2 layers as a function of process and measurement parameters. Measurable light emission was observed from the metal oxide semiconductor light emitting diode ( MOS-LED) when holes are injected from the substrate. It was shown that major PL and EL emissions have the same origin. However, two important differences were observed between EL and PL spectra. The first one is the light emission from the Si substrate due to the recombination of electrons supplied by the front contact and holes that were accumulated in the inversion region at the substrate/SiO2 interface. This might be a factor reducing the contribution of Si nanocrystals to the EL emission of the MOS-LED structure as a result of decrease in the number of holes in the inversion layer. The second difference is that EL emission peaks stay at a slightly higher energy than PL peaks. It was observed that the EL peak shifts towards the PL peak with increasing bias voltage. This behaviour is explained by considering the size distribution of nanocrystals formed by ion implantation.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics

URI

https://hdl.handle.net/11511/39353

Journal

SEMICONDUCTOR SCIENCE AND TECHNOLOGY

DOI

https://doi.org/10.1088/0268-1242/21/12/004

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Thermally stimulated currents in layered semiconductor Tl4In3GaS8 Hasanlı, Nızamı; Mogaddam, N. A. P. (IOP Publishing, 2006-09-01) We have carried out thermally stimulated current measurements on as-grown Tl4In3GaS8 layered single crystals in the temperature range 10-90 K with different heating rates of 0.10-0.30 K s(-1). The data were analysed by curve fitting, heating rates and isothermal decay methods. The results were in good agreement with each other. Experimental evidence was found for one trapping centre in Tl4In3GaS8 crystal with an activation energy of 12 meV. The capture cross section and concentration of the traps were found...
Thermally stimulated currents in layered Ga4SeS3 semiconductor Aytekin, S; Yuksek, NS; Goktepe, M; Hasanlı, Nızamı; Aydinli, A (Wiley, 2004-10-01) Thermally stimulated current (TSC) measurements are carried out on nominally undoped Ga4SeS3 layered semiconductor samples with the cur-rent flowing along the c-axis in the temperature range of 10 to 150 K. The results are analyzed according to various methods, such as curve fitting, initial rise and Chen's methods, which seem to be in good agreement with each other. Experimental evidence is found for the presence of three trapping centers in Ga4SeS3 with activation energies of 70, 210 and 357 meV. The calc...
Direct measurement of molecular stiffness and damping in confined water layers JEFFERY, STEVE; HOFFMANN, PETER M; PETHİCA, JOHN B; RAMANUJAN, CHANDRA; ÖZER, HAKAN ÖZGÜR; Oral, Ahmet (American Physical Society (APS), 2004-08-01) We present direct and linear measurements of the normal stiffness and damping of a confined, few molecule thick water layer. The measurements were obtained by use of a small amplitude (0.36 Angstrom), off-resonance atomic force microscopy technique. We measured stiffness and damping oscillations revealing up to seven molecular layers separated by 2.526+/-0.482 Angstrom. Relaxation times could also be calculated and were found to indicate a significant slow-down of the dynamics of the system as the confining...
Thermally stimulated current analysis of shallow levels in TlGaS2 layered single crystals Yuksek, NS; Hasanlı, Nızamı; Ozkan, H (IOP Publishing, 2003-09-01) We have carried out thermally stimulated current measurements on as-grown T1GaS(2) layered single crystals in the temperature range of 10-60 K with various heating rates. We found experimental evidence for the presence of three trapping centres in TlGaS2, located at 6, 12 and 26 meV. We have determined the trap parameters using various methods of analysis, and these agree well with each other. The retrapping process is negligible for these levels, as confirmed by the good agreement between the experimental ...
Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode Yigiterol, F.; Güllü, Hasan Hüseyin; Bayraklı, Özge; YILDIZ, DİLBER ESRA (Springer Science and Business Media LLC, 2018-05-01) Electrical characteristics of the Au/Si3N4/4H n-SiC metal–insulator-semiconductor (MIS) diode were investigated under the temperature, T, interval of 160–400 K using current–voltage (I–V), capacitance–voltage (C−V) and conductance–voltage (G/ω−V) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height (ΦB0) and ideality factor (n) were calculated according to the thermionic emission (TE) from forward bias I–V analysis in the whole working T. Experimental results showed that the valu...

Citation Formats

M. Kulakci, U. Serincan, and R. Turan, “Electroluminescence generated by a metal oxide semiconductor light emitting diode (MOS-LED) with Si nanocrystals embedded in SiO2 layers by ion implantation,” SEMICONDUCTOR SCIENCE AND TECHNOLOGY, pp. 1527–1532, 2006, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/39353.