Optical Modulation With Silicon Microspheres

Yüce, Emre
Serpenguzel, Ali
In this letter, a silicon microsphere coupled to a silica optical fiber half coupler has been characterized for electrooptical modulation in the L-band at 1.55 mu m. Electrooptical modulation of the transmitted and the 90 degrees elastic scattered signals for both the TE and the TM polarizations of the microsphere resonances has been observed.


Optical parameters of anisotropic chain-structured Tl2InGaTe4 crystals by spectroscopic ellipsometry
IŞIK, MEHMET; Hasanlı, Nızamı (Elsevier BV, 2016-01-01)
Spectroscopic ellipsometry measurements were performed on Tl2InGaTe4 single crystals in the 1.2-6.2 eV range for orientations of electric field, parallel (E//c) and perpendicular (E perpendicular to c) to optic axis c. Spectral dependence of optical parameters; real and imaginary components of the dielectric function, refractive index and extinction coefficient were obtained from the analyses of experimental data using an ambient-substrate optical model. The analysis of the absorption data calculated using ...
Frequency effect on electrical and dielectric characteristics of In/Cu2ZnSnTe4/Si/Ag diode structure
Gullu, H. H.; Surucu, O. Bayrakli; Terlemezoğlu, Makbule; Yildiz, D. E.; Parlak, Mehmet (Springer Science and Business Media LLC, 2019-05-01)
In/Cu2ZnSnTe4/Si/Ag diode structure was fabricated by sputtering Cu2ZnSnTe4 (CZTTe) thin film layer on the Si layer with In front contact. The frequency dependent room temperature capacitance and conductance measurements were carried out to obtain detailed information of its electrical characteristics. Admittance spectra of the diode exhibited strong frequency dependence and the obtained values showed decreasing behavior with the increase in the applied frequency. The effect of interfacial film layer with s...
Spectroscopic ellipsometry investigation of optical properties of beta-Ga2S3 single crystals
Işık, Mehmet; Hasanlı, Nızamı; Gasanova, L. (Elsevier BV, 2018-12-01)
Ga2S3 single crystals were studied by x-ray diffraction (XRD), energy dispersive spectroscopy and spectroscopic ellipsometry measurements. XRD pattern of the sample is well-matched with reported hexagonal structure of beta-Ga2S3 . The spectra of real and imaginary parts of complex dielectric function (epsilon = epsilon(1) + epsilon(2)) and refractive index (N = n + ik) were plotted in the 1.2-6.2 eV range according to results of ellipsometric data. The e 2 -spectrum and analyses of absorption coefficient po...
Quantitative analysis of nonlinear dynamics of quantum light transmission in strongly coupled quantum dot-cavity systems
Tugen, Alperen; Kocaman, Serdar (Elsevier BV, 2019-04-01)
We compared transmission spectra of coupled high-Q cavity with quantum dot (QD) systems in the strong coupling regime with Input-Output Formalism (IOF) and Incoherent Pumping Mechanism (IPM) based on Lindblad master equation approach. The peak transmission of Dipole Induced Transparency (DIT) together with its full-width-half-maximum (FWHM) are enquired for detailed analysis. Both methods exhibit the same vacuum Rabi splitting in on-resonant case, in contrast, the peak of DIT is estimated smaller between 50...
Frequency effect on electrical and dielectric characteristics of HfO2-interlayered Si-based Schottky barrier diode
Gullu, H. H.; Yildiz, D. E.; Surucu, O.; Parlak, Mehmet (Springer Science and Business Media LLC, 2020-06-01)
This study reveals the electrical properties of In/HfO2/n-Si structure with atomic layer-deposited interfacial oxide layer, HfO2 thin film between In top metal contact and monocrystalline Si wafer substrate. From the dark current-voltage measurements, the diode structure showed good rectifying behavior and low saturation current of about two order of magnitude and 1.2 x 10(- 9) A, respectively. According to the conventional thermionic emission model, zero-bias barrier height and ideality factor were calcula...
Citation Formats
E. Yüce and A. Serpenguzel, “Optical Modulation With Silicon Microspheres,” IEEE PHOTONICS TECHNOLOGY LETTERS, pp. 1481–1483, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/34917.