Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction

Kulakci, Mustafa
Turan, Raşit
AZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, series resistance have been calculated using its current-voltage (I-V) measurements between 300 and 380K with 20K intervals. The short current density (J(sc)) and open circuit voltage (V-oc) parameters have been determined between 40 and 100mW/cm(2). The photovoltaic parameters of the device have been also determined under 100mW/cm(2) and AM1.5 illumination condition.


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Very recently, a novel Dirac half-metal has been investigated in the perovskite-type lanthanum manganite (LaMnO3) by Ma et al. [1] and the half metallicity with 100% spin polarization is discovered. More remarkably, multiple linear Dirac crossings are observed around the Fermi energy level in the spin-up direction. Inspired by this work, another perovskite-type material YbBO3, which has been synthesized before, is investigated by first principles calculation. Results confirm the presence of half metallicity...
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Citation Formats
Y. S. OCAK, M. Kulakci, R. Turan, T. KILIÇOĞLU, and Ö. GÜLLÜ, “Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction,” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 6631–6634, 2011, Accessed: 00, 2020. [Online]. Available: