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Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction

2011-06-09
OCAK, YUSUF SELİM
Kulakci, Mustafa
Turan, Raşit
KILIÇOĞLU, TAHSİN
GÜLLÜ, ÖMER
AZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, series resistance have been calculated using its current-voltage (I-V) measurements between 300 and 380K with 20K intervals. The short current density (J(sc)) and open circuit voltage (V-oc) parameters have been determined between 40 and 100mW/cm(2). The photovoltaic parameters of the device have been also determined under 100mW/cm(2) and AM1.5 illumination condition. (C) 2011 Elsevier B.V. All rights reserved.