Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction

Date

2011-06-09

Author

OCAK, YUSUF SELİM
Kulakci, Mustafa
Turan, Raşit
KILIÇOĞLU, TAHSİN
GÜLLÜ, ÖMER

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AZnO/p-InP heterojunction has been fabricated by dc sputtering of ZnO on p-InP. It has been observed that the device has a good rectification. The electrical properties of the device such as ideality factor, barrier height, series resistance have been calculated using its current-voltage (I-V) measurements between 300 and 380K with 20K intervals. The short current density (J(sc)) and open circuit voltage (V-oc) parameters have been determined between 40 and 100mW/cm(2). The photovoltaic parameters of the device have been also determined under 100mW/cm(2) and AM1.5 illumination condition.

Subject Keywords

Mechanical Engineering, Materials Chemistry, Mechanics of Materials, Metals and Alloys

URI

https://hdl.handle.net/11511/42435

Journal

JOURNAL OF ALLOYS AND COMPOUNDS

DOI

https://doi.org/10.1016/j.jallcom.2011.03.114

Collections

Department of Physics, Article

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Citation Formats

Y. S. OCAK, M. Kulakci, R. Turan, T. KILIÇOĞLU, and Ö. GÜLLÜ, “Analysis of electrical and photoelectrical properties of ZnO/p-InP heterojunction,” JOURNAL OF ALLOYS AND COMPOUNDS, pp. 6631–6634, 2011, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42435.