Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy

Date

2007-01-01

Author

Behn, Udo
Misra, Pranob
Grahn, Holger T.
İmer, Muhsine Bilge
Nakamura, Shuji
DenBaars, Steven P.
Speck, James S.

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We have used polarized photoreflectance spectroscopy to study the electronic-band-structure modification of GaN films grown along different nonpolar orientations due to biaxial, anisotropic in-plane strain. For nonpolar oriented films, the c-axis of GaN lies in the film plane. An unstrained, high-quality C-plane GaN film is used to estimate the difference in the band gap energies between 10 K and room temperature. We use the crystal-field and spin-orbit splitting energies and the deformation potential D, determined at low temperatures to calculate the transition energies and the polarization properties of nonpolar oriented films at room temperature using the k-p perturbation approach. The calculated transition energies and oscillator strengths are then compared to the experimentally obtained values. (c) 2007 WELEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Subject Keywords

Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Surfaces, Coatings and Films, Surfaces and Interfaces, Condensed Matter Physics

URI

https://hdl.handle.net/11511/36677

Journal

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

DOI

https://doi.org/10.1002/pssa.200673539

Collections

Department of Metallurgical and Materials Engineering, Article

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Citation Formats

U. Behn et al., “Polarization anisotropy in nonpolar oriented GaN films studied by polarized photoreflectance spectroscopy,” PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, pp. 299–303, 2007, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/36677.