Enhancement in Photovoltaic Characteristics of CdS/CdTe Heterojunction

Download

index.pdf

Date

2017-12-01

Author

Surucu, Gukhan
Gullu, HASAN HÜSEYİN
Bayrakli, Ozge
Parlak, Mehmet

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

157
views

60
downloads

The polycrystalline p-type CdTe thin film was deposited to form a solar cell structure with n-type CdS thin film window layer. Material characterization of the deposited thin films were investigated by X-ray diffraction measurements and the preferred orientations were obtained along (111) direction at 2 theta congruent to 24 degrees and 2 theta congruent to 26.5 degrees for CdTe and CdS films, respectively. The optical behaviors were investigated according to the transmission spectrum and corresponding direct band gap values were found as 1.51 eV for CdTe and 2.22 eV for CdS thin films. The superstrate CdS/CdTe thin film heterostructure was investigated under the dark and illuminated current-voltage measurements. The heterostructure showed a photovoltaic behavior with the cell efficiency of % 1.4. The effects of the etching process on the photovoltaic behavior of CdS/CdTe thin film heterostructure were also discussed and the cell efficiency was enhanced as about % 1.6 eV.

Subject Keywords

CdS/CdTe, Thin Film Solar Cell, Etching

URI

https://hdl.handle.net/11511/42772

Journal

JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI

DOI

https://doi.org/10.2339/politeknik.368993

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Improvement of Laser-Crystallized Silicon Film Quality via Intermediate Dielectric Layers on a Glass Substrate Cinar, Kamil; Karaman, Mehmet; Bek, Alpan (2018-05-01) The laser crystallization (LC) of amorphous silicon thin films into polycrystalline silicon (pc-Si) thin films on glass substrates is an active field of research in the fabrication of Si-based thin film transistors and thin film solar cells. Efforts have been, in particular, focused on the improvement of LC technique. Adhesion promoters of the crystallized Si thin films at the glass interface play a crucial role in the stability and device performance of fabricated structures. The crystalline Si thin films ...
Enhancement of electrical conductivity of plasma polymerized fluorene-type thin film under iodine and chlorine dopants MANSUROGLU, Dogan; Uzun Kaymak, İlker Ümit (2017-08-31) Electrical and optical properties of plasma-polymerized fluorene-type (C13H10) iodine-and chlorine-doped thin films are investigated. Fluorene-type thin films are produced using a mixture of biphenyl (C12H10) and methane (CH4) inside a single capacitively coupled radio frequency plasma system. The dopants are mixed with the plasmadirectly as vapor during the deposition. The chemical structures of the generated functional compounds, evaluated by a Fourier transform infrared spectroscopy, exhibit a changeable...
Development of indium tin oxide (ITO) nanoparticle incorporated transparent conductive oxide thin films Yavaş, Hakan; Durucan, Caner; Department of Metallurgical and Materials Engineering (2012) Indium tin oxide (ITO) thin films have been used as transparent electrodes in many technological applications such as display panels, solar cells, touch screens and electrochromic devices. Commercial grade ITO thin films are usually deposited by sputtering. Solution-based coating methods, such as sol-gel however, can be simple and economic alternative method for obtaining oxide films and also ITO. In this thesis, “ITO sols” and “ITO nanoparticle-incorporated hybrid ITO coating sols” were prepared using indi...
Investigation of structural and optical characteristics of thermally evaporated Ga2Se3 thin films Isik, M.; Hasanlı, Nızamı (2020-09-01) Ga2Se3 thin films were prepared by thermal evaporation technique and structural, optical characteristics of the deposited thin films were investigated in the present study. X-ray diffraction pattern of the thin film exhibited one intensive and sharp peak associated with (111) plane of cubic crystalline structure of the compound. Energy dispersive spectroscopic analyses pointed out the atomic compositional ratio of the constituent elements as consistent with chemical formula of Ga2Se3. The optical characteri...
Fabrication of CdSexTe1-x thin films by sequential growth using double sources Demir, Medine; Terlemezoglu, M.; Parlak, Mehmet (2021-10-15) CdSexTe(1-x) (CST) ternary thin films were fabricated by stacking thermally evaporated CdSe and electron beam evaporated CdTe layers. The final structure was achieved in a stoichiometric form of approximately Cd:Se:Te = 50:25:25. The post-annealing processes at 300, 400, and 450 °C were applied to trigger the compound formation of CST thin films. The X-ray diffraction (XRD) profiles revealed that CdTe and CdSe have major peaks at 23.9° and 25.5° corresponds to (111) direction in cubic zinc-blend structure. ...

Citation Formats

G. Surucu, H. H. Gullu, O. Bayrakli, and M. Parlak, “Enhancement in Photovoltaic Characteristics of CdS/CdTe Heterojunction,” JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI, pp. 801–805, 2017, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42772.