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Enhancement in Photovoltaic Characteristics of CdS/CdTe Heterojunction
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Date
2017-12-01
Author
Surucu, Gukhan
Gullu, HASAN HÜSEYİN
Bayrakli, Ozge
Parlak, Mehmet
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The polycrystalline p-type CdTe thin film was deposited to form a solar cell structure with n-type CdS thin film window layer. Material characterization of the deposited thin films were investigated by X-ray diffraction measurements and the preferred orientations were obtained along (111) direction at 2 theta congruent to 24 degrees and 2 theta congruent to 26.5 degrees for CdTe and CdS films, respectively. The optical behaviors were investigated according to the transmission spectrum and corresponding direct band gap values were found as 1.51 eV for CdTe and 2.22 eV for CdS thin films. The superstrate CdS/CdTe thin film heterostructure was investigated under the dark and illuminated current-voltage measurements. The heterostructure showed a photovoltaic behavior with the cell efficiency of % 1.4. The effects of the etching process on the photovoltaic behavior of CdS/CdTe thin film heterostructure were also discussed and the cell efficiency was enhanced as about % 1.6 eV.
Subject Keywords
CdS/CdTe
,
Thin Film Solar Cell
,
Etching
URI
https://hdl.handle.net/11511/42772
Journal
JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI
DOI
https://doi.org/10.2339/politeknik.368993
Collections
Department of Physics, Article
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BibTeX
G. Surucu, H. H. Gullu, O. Bayrakli, and M. Parlak, “Enhancement in Photovoltaic Characteristics of CdS/CdTe Heterojunction,”
JOURNAL OF POLYTECHNIC-POLITEKNIK DERGISI
, vol. 20, no. 4, pp. 801–805, 2017, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42772.