Enhancement of electrical conductivity of plasma polymerized fluorene-type thin film under iodine and chlorine dopants

Date

2017-08-31

Author

MANSUROGLU, Dogan
Uzun Kaymak, İlker Ümit

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

104
views

0
downloads

Electrical and optical properties of plasma-polymerized fluorene-type (C13H10) iodine-and chlorine-doped thin films are investigated. Fluorene-type thin films are produced using a mixture of biphenyl (C12H10) and methane (CH4) inside a single capacitively coupled radio frequency plasma system. The dopants are mixed with the plasmadirectly as vapor during the deposition. The chemical structures of the generated functional compounds, evaluated by a Fourier transform infrared spectroscopy, exhibit a changeable extension conjugation providing high crosslinking and branching. The structural orders of the doped films are analyzed using X-ray diffraction measurements. The film thickness is measured by ellipsometry. Measured difference in thickness due to doping varies from 16 nm to 50 nm. The structural characterization shows that the doped films are stable and of high quality. The current-voltage characteristics of devices are obtained using two-point probe measurements. As a result of doping, electrical conductivity as high as two orders of magnitude compared to that of the undoped films is measured. In addition, ultraviolet-visible spectroscopy is used to characterize the optical properties. Optical energy band gaps of the doped films as low as 2.4 eV are obtained. In conclusion, plasma processing is proven to improve the optical and electrical properties of the doped films.

Subject Keywords

Fluorene-type thin film, Plasma deposition, In situ doping, Conductivity

URI

https://hdl.handle.net/11511/44357

Journal

THIN SOLID FILMS

DOI

https://doi.org/10.1016/j.tsf.2017.03.053

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Investigation of structural and optical parameters of Cu-Ag-In-Se thin films deposited by thermal evaporation method Gullu, H. H.; CANDAN, İDRİS; COŞKUN, EMRE; Parlak, Mehmet (2015-01-01) Annealing effect on the structural and optical properties of the quaternary Cu-Ag-In-Se thin film deposited by the thermal evaporation has been investigated. The evaporation source was prepared by using vertical Bridgman-Stockbarger crystal growth system. Structural analysis indicated that annealing the films following to the deposition resulted in the changes from amorphous to polycrystalline phase with the preferred orientation along (1 1 2) direction. In order to determine the optical properties of the t...
Optical and electrical characteristics of thermally evaporated Cu0.5Ag0.5InSe2 thin films Gullu, H. H.; Bayrakli, O.; Parlak, Mehmet (2017-10-01) In this study, optical and electrical characteristics of the Cu0.5Ag0.5InSe2 (CAIS) polycrystalline thin films were investigated. They were deposited on soda lime glass substrates with the evaporation of pure elemental sources by using physical thermal evaporation technique at 200 degrees C substrate temperature. The thin films were characterized firstly in as-grown form, and then annealed under the nitrogen environment to deduce the effects of annealing on the optical and electrical properties of the depos...
Structural and optical characteristics of thermally evaporated TlGaSe2 thin films Isik, M.; KARATAY, AHMET; Hasanlı, Nızamı (2022-02-01) The present paper reports the structural and optical properties of thermally evaporated TlGaSe2 thin films. X-ray diffraction pattern of evaporated film presented two diffraction peaks around 24.15 and 36.00° which are associated with planes of monoclinic unit cell. Surface morphology of the TlGaSe2 thin films was investigated by scanning electron and atomic force microscopy techniques. Although there was observed some ignorable amount of clusters of quasi-spherical shape in the scanning electron microscope...
Fabrication of CdSexTe1-x thin films by sequential growth using double sources Demir, Medine; Terlemezoglu, M.; Parlak, Mehmet (2021-10-15) CdSexTe(1-x) (CST) ternary thin films were fabricated by stacking thermally evaporated CdSe and electron beam evaporated CdTe layers. The final structure was achieved in a stoichiometric form of approximately Cd:Se:Te = 50:25:25. The post-annealing processes at 300, 400, and 450 °C were applied to trigger the compound formation of CST thin films. The X-ray diffraction (XRD) profiles revealed that CdTe and CdSe have major peaks at 23.9° and 25.5° corresponds to (111) direction in cubic zinc-blend structure. ...
Study of the a-Si:H/c-Si Heterointerface by Ex-Situ Spectroscopic Ellipsometry, Infrared Spectroscopy, and Solar Cell Modeling Pehlivan, O.; KARATAŞ, SERÇİN; Yilmaz, O.; Kodolbas, A. O.; Duygulu, O.; DUYGULU, Nilüfer; İSKENDER, İRES; Tomak, Mehmet (2015-06-01) The interface formation between plasma-enhanced chemical vapor-deposited (PECVD) silicon thin films and H-terminated, p-type c-Si was investigated. The formation of hydrogenated amorphous silicon (a-Si:H), epitaxial Si, and mixed phase Si was detected through spectroscopic ellipsometry (SE) and high-resolution transmission electron microscopy (HRTEM). The evolution of the hydrogen content and hydrogen bonding configurations in the films were monitored by attenuated total reflection infrared spectroscopy (FT...

Citation Formats

D. MANSUROGLU and İ. Ü. Uzun Kaymak, “Enhancement of electrical conductivity of plasma polymerized fluorene-type thin film under iodine and chlorine dopants,” THIN SOLID FILMS, pp. 773–778, 2017, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/44357.