Investigation of structural and optical characteristics of thermally evaporated Ga2Se3 thin films

Date

2020-09-01

Author

Isik, M.
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

198
views

0
downloads

Ga2Se3 thin films were prepared by thermal evaporation technique and structural, optical characteristics of the deposited thin films were investigated in the present study. X-ray diffraction pattern of the thin film exhibited one intensive and sharp peak associated with (111) plane of cubic crystalline structure of the compound. Energy dispersive spectroscopic analyses pointed out the atomic compositional ratio of the constituent elements as consistent with chemical formula of Ga2Se3. The optical characteristics of thin film were studied by means of temperature-dependent transmission experiments carried out in between 10 and 300 K. The analyses to get band gap energies at applied temperatures were accomplished using absorption coefficient according to Tauc relation and derivative transmittance spectra. Absorption coefficient analyses end up with band gap energies increasing from 2.60 eV (room temperature) to 2.67 eV (10 K). The derivatives of transmittance spectra were also utilized for purpose and band gap energies were found very closer (max. +/- 0.02 eV deviation) to those of absorption coefficient analyses. Varshni and Fan models were applied to band gap energy vs. temperature plot and various optical parameters of Ga2Se3 thin film were determined.

Subject Keywords

Ga2Se3, Thin film, Optical properties

URI

https://hdl.handle.net/11511/33296

Journal

Vacuum

DOI

https://doi.org/10.1016/j.vacuum.2020.109501

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Investigation of structural and optical parameters of Cu-Ag-In-Se thin films deposited by thermal evaporation method Gullu, H. H.; CANDAN, İDRİS; COŞKUN, EMRE; Parlak, Mehmet (2015-01-01) Annealing effect on the structural and optical properties of the quaternary Cu-Ag-In-Se thin film deposited by the thermal evaporation has been investigated. The evaporation source was prepared by using vertical Bridgman-Stockbarger crystal growth system. Structural analysis indicated that annealing the films following to the deposition resulted in the changes from amorphous to polycrystalline phase with the preferred orientation along (1 1 2) direction. In order to determine the optical properties of the t...
Structural and optical properties of thermally evaporated Ga-In-Se thin films IŞIK, MEHMET; Güllü, Hasan Hüseyin (2014-05-30) In this paper, structural and optical properties of Ga-In-Se (GIS) thin films deposited by thermal evaporation technique have been investigated. The effect of annealing was also studied for samples annealed at temperatures between 300 degrees C and 500 degrees C. X-ray diffraction, energy dispersive X-ray analysis and scanning electron microscopy have been used for structural characterization. It was reported that increase of annealing temperature results with better crystallization and chemical composition...
Investigation of optical parameters of thermally evaporated ZnSe thin films Gullu, H. H.; Coşkun, Emre; Parlak, Mehmet (2015-04-29) In this work, zinc selenide (ZnSe) thin films were deposited by thermal evaporation method using pure elemental (Zn and Se) sources. The physical properties of the films have been investigated in terms of the structural and optical characterizations depending on the post-annealing process under nitrogen atmosphere in the temperature between 300 and 500 degrees C for 30 min. The structural and compositional analyses were carried out by means of X-ray diffraction (XRD) and energy dispersive X-ray spectroscopy...
Optical and structural characteristics of electrodeposited Cd 1-xZnxS nanostructured thin films Erturk, K.; Isik, M.; Terlemezoglu, M.; Hasanlı, Nızamı (2021-04-01) The structural and optical characteristics of Cd1-xZnxS (CdZnS) thin films grown by the electrodeposition method were investigated in the present paper. The crystalline structure of the grown CdZnS thin film was determined as cubic wurtzite due to observed diffraction peaks associated with (111) and (220) planes. Atomic compositional ratios of the constituent elements were obtained using energy dispersive spectroscopy and doping concentration of the Zn was found as 5% (x ~ 0.05). Scanning electron microscop...
Structural and optical properties of Zn-In-Te thin films deposited by thermal evaporation technique Gullu, H. H.; Bayrakli, O.; CANDAN, İDRİS; COŞKUN, EMRE; Parlak, Mehmet (2013-07-25) Annealing effects on structural and optical properties of the thermally evaporated Zn-In-Te(ZIT) thin films have been investigated. The structural and the compositional analyses were carried out by means of X-ray diffraction (XRD) and energy dispersive X-ray analysis (EDXA). The as-grown and annealed ZIT films had polycrystalline structure and the preferred orientation changed from (220) to (112) direction with increasing annealing temperature. The optical properties and constants were determined by transmi...

Citation Formats

M. Isik and N. Hasanlı, “Investigation of structural and optical characteristics of thermally evaporated Ga2Se3 thin films,” Vacuum, pp. 0–0, 2020, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/33296.