Growth of thick (11(2)over-bar0) GaN using a metal interlayer

Tavernier, PR
İmer, Muhsine Bilge
DenBaars, SP
Clarke, DR
Thick films of (11 (2) over bar0)-oriented GaN have been grown on Ti-coated metal organic chemical vapor deposition templates using hydride vapor phase epitaxy. Significant reductions in crack density were observed enabling 240 mum thick films to be grown on sapphire. The use of Ti interlayers was shown to generate significant fractions of voids at the interlayer regrowth interface facilitating void-assisted separation on cooling. Ti metal layers annealed under optimal conditions were found to produce a TiN nanomask suitable for lateral overgrowth during HVPE. An estimate of the void size required to allow spontaneous delamination of the substrate at the TiN-GaN interface is discussed with reference to growth conditions. (C) 2004 American Institute of Physics.


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Stability of (1(1)over-bar-00) m-plane GaN films grown by metalorganic chemical vapor deposition
İmer, Muhsine Bilge; Cravens, Michael D.; Speck, James S.; DenBaars, Steven P. (IOP Publishing, 2006-11-01)
We show the stability of planar nonpolar (1 (1) over bar 00) m-plane GaN thin films grown on m-plane 6H-SiC substrates using an AlN nucleation layer (NL) by metalorganic chemical vapor deposition (MOCVD). The stability of the m-plane GaN films was studied for a wide range of growth variables including reactor pressure, temperature, and group III and V flow rates. The surface morphology and crystal quality of the m-plane GaN films were less sensitive to changes in these growth variables than those of nonpola...
Citation Formats
P. Tavernier, M. B. İmer, S. DenBaars, and D. Clarke, “Growth of thick (11(2)over-bar0) GaN using a metal interlayer,” APPLIED PHYSICS LETTERS, pp. 4630–4632, 2004, Accessed: 00, 2020. [Online]. Available: