Show/Hide Menu
Hide/Show Apps
Logout
Türkçe
Türkçe
Search
Search
Login
Login
OpenMETU
OpenMETU
About
About
Open Science Policy
Open Science Policy
Open Access Guideline
Open Access Guideline
Postgraduate Thesis Guideline
Postgraduate Thesis Guideline
Communities & Collections
Communities & Collections
Help
Help
Frequently Asked Questions
Frequently Asked Questions
Guides
Guides
Thesis submission
Thesis submission
MS without thesis term project submission
MS without thesis term project submission
Publication submission with DOI
Publication submission with DOI
Publication submission
Publication submission
Supporting Information
Supporting Information
General Information
General Information
Copyright, Embargo and License
Copyright, Embargo and License
Contact us
Contact us
Growth of thick (11(2)over-bar0) GaN using a metal interlayer
Date
2004-11-15
Author
Tavernier, PR
İmer, Muhsine Bilge
DenBaars, SP
Clarke, DR
Metadata
Show full item record
This work is licensed under a
Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
.
Item Usage Stats
142
views
0
downloads
Cite This
Thick films of (11 (2) over bar0)-oriented GaN have been grown on Ti-coated metal organic chemical vapor deposition templates using hydride vapor phase epitaxy. Significant reductions in crack density were observed enabling 240 mum thick films to be grown on sapphire. The use of Ti interlayers was shown to generate significant fractions of voids at the interlayer regrowth interface facilitating void-assisted separation on cooling. Ti metal layers annealed under optimal conditions were found to produce a TiN nanomask suitable for lateral overgrowth during HVPE. An estimate of the void size required to allow spontaneous delamination of the substrate at the TiN-GaN interface is discussed with reference to growth conditions. (C) 2004 American Institute of Physics.
Subject Keywords
Physics and Astronomy (miscellaneous)
URI
https://hdl.handle.net/11511/42823
Journal
APPLIED PHYSICS LETTERS
DOI
https://doi.org/10.1063/1.1818736
Collections
Department of Metallurgical and Materials Engineering, Article
Suggestions
OpenMETU
Core
GROWTH OF IN1-XTLXSB A NEW INFRARED MATERIAL, BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
CHOI, YH; Beşikci, Cengiz; SUDHARSANAN, R; RAZEGHI, M (AIP Publishing, 1993-07-19)
We report the growth of In1-xTlxSb, a new III-V alloy for long-wavelength infrared detector applications, by low-pressure metalorganic chemical vapor deposition. In1-xTlxSb with good surface morphology was obtained on both GaAs and InSb substrates at a growth temperature of 455-degrees-C. X-ray diffraction measurements showed resolved peaks of In1-xTlxSb and InSb films. Infrared absorption spectrum of In1-xTlxSb showed a shift toward lower energies compared to InSb spectrum. Hall mobility data on In1-xTlxSb...
Modification of transparent and conducting single wall carbon nanotube thin films via bromine functionalization
Fanchini, Giovanni; Ünalan, Hüsnü Emrah; Chhowalla, Manish (AIP Publishing, 2007-02-26)
The results of bromine doping of transparent and conducting single wall carbon nanotube (SWNT) thin films are described. Br profoundly effects the density of states (DOS) of SWNTs which leads to dramatic improvement in the electrical properties. The authors show that the role of the Br is not only in shifting the Fermi level but also in forming acceptor sites in metallic SWNTs. These modifications of the DOS through bromination lead to simultaneous increase in both the on/off ratio and mobility of thin film...
Photoelectrochemical cell using dye sensitized zinc oxide nanowires grown on carbon fibers
Ünalan, Hüsnü Emrah; Suzuki, Kenichi; Dalal, Sharvari; Hiralal, Pritesh; Matsumoto, Hidetoshi; Imaizumi, Shinji; Minagawa, Mie; Tanioka, Akihiko; Flewitt, Andrew J.; Milne, William I.; Amaratunga, Gehan A. J. (AIP Publishing, 2008-09-29)
Zinc oxide (ZnO) nanowires (NWs) grown on carbon fibers using a vapor transport and condensation approach are used as the cathode of a photoelectrochemical cell. The carbon fibers were obtained by electrospray deposition and take the form of a flexible carbon fabric. The ZnO NW on carbon fiber anode is combined with a "black dye" photoabsorber, an electrolyte, and a platinum (Pt) counterelectrode to complete the cell. The results show that ZnO NW and carbon fibers can be used for photoinduced charge separat...
Measurement of the top quark mass using charged particles in pp collisions at root s=8 TeV
Khachatryan, V.; et. al. (American Physical Society (APS), 2016-05-01)
A novel technique for measuring the mass of the top quark that uses only the kinematic properties of its charged decay products is presented. Top quark pair events with final states with one or two charged leptons and hadronic jets are selected from the data set of 8 TeV proton-proton collisions, corresponding to an integrated luminosity of 19.7 fb(-1). By reconstructing secondary vertices inside the selected jets and computing the invariant mass of the system formed by the secondary vertex and an isolated ...
Stability of (1(1)over-bar-00) m-plane GaN films grown by metalorganic chemical vapor deposition
İmer, Muhsine Bilge; Cravens, Michael D.; Speck, James S.; DenBaars, Steven P. (IOP Publishing, 2006-11-01)
We show the stability of planar nonpolar (1 (1) over bar 00) m-plane GaN thin films grown on m-plane 6H-SiC substrates using an AlN nucleation layer (NL) by metalorganic chemical vapor deposition (MOCVD). The stability of the m-plane GaN films was studied for a wide range of growth variables including reactor pressure, temperature, and group III and V flow rates. The surface morphology and crystal quality of the m-plane GaN films were less sensitive to changes in these growth variables than those of nonpola...
Citation Formats
IEEE
ACM
APA
CHICAGO
MLA
BibTeX
P. Tavernier, M. B. İmer, S. DenBaars, and D. Clarke, “Growth of thick (11(2)over-bar0) GaN using a metal interlayer,”
APPLIED PHYSICS LETTERS
, pp. 4630–4632, 2004, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/42823.