GROWTH OF IN1-XTLXSB A NEW INFRARED MATERIAL, BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

1993-07-19
CHOI, YH
Beşikci, Cengiz
SUDHARSANAN, R
RAZEGHI, M
We report the growth of In1-xTlxSb, a new III-V alloy for long-wavelength infrared detector applications, by low-pressure metalorganic chemical vapor deposition. In1-xTlxSb with good surface morphology was obtained on both GaAs and InSb substrates at a growth temperature of 455-degrees-C. X-ray diffraction measurements showed resolved peaks of In1-xTlxSb and InSb films. Infrared absorption spectrum of In1-xTlxSb showed a shift toward lower energies compared to InSb spectrum. Hall mobility data on In1-xTlxSb/InSb/GaAs structure showed enhanced mobility at low temperatures compared to InSb/GaAs structure.

Citation Formats
Y. CHOI, C. Beşikci, R. SUDHARSANAN, and M. RAZEGHI, “GROWTH OF IN1-XTLXSB A NEW INFRARED MATERIAL, BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION,” APPLIED PHYSICS LETTERS, vol. 63, no. 3, pp. 361–363, 1993, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/46908.