Defect luminescence in some layered binary chalcogenide semiconductors

Download

index.pdf

Date

2002-01-01

Author

Aydinli, A
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

10
views

18
downloads

A number of semiconductors such as GaS, GaSe, GaSSe show layered structure where intralayer bonding is strong and interlayer bonding quite weak. With bandgaps mostly in the visible and the near infrared and high crystal structure anisotropy, such semiconductors offer interesting possibilities for optoelectronic applications. In this review, we will summarize the recent developments on the photoluminescent properties of these materials such as luminescence due to donor-acceptor pair recombination. As these materials are undoped, the observed photoluminescence is attributed mostly to defect states present in these materials.

Subject Keywords

Chalcogenides, Optical properties, Layered semiconductors, Defects

URI

https://hdl.handle.net/11511/43146

Journal

DEFECTS AND DIFFUSION IN SEMICONDUCTORS

DOI

https://doi.org/10.4028/www.scientific.net/ddf.210-212.61

Collections

Department of Physics, Article

Citation Formats

A. Aydinli and N. Hasanlı, “Defect luminescence in some layered binary chalcogenide semiconductors,” DEFECTS AND DIFFUSION IN SEMICONDUCTORS, pp. 61–69, 2002, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/43146.