Defect luminescence in some layered binary chalcogenide semiconductors

Aydinli, A
Hasanlı, Nızamı
A number of semiconductors such as GaS, GaSe, GaSSe show layered structure where intralayer bonding is strong and interlayer bonding quite weak. With bandgaps mostly in the visible and the near infrared and high crystal structure anisotropy, such semiconductors offer interesting possibilities for optoelectronic applications. In this review, we will summarize the recent developments on the photoluminescent properties of these materials such as luminescence due to donor-acceptor pair recombination. As these materials are undoped, the observed photoluminescence is attributed mostly to defect states present in these materials.


Thermoluminescence characteristics of GaSe and Ga2Se3 single crystals
Isik, M.; SARIGÜL, NESLİHAN; Hasanlı, Nızamı (2022-06-01)
GaSe and Ga2Se3 are semiconducting compounds formed from same constituent elements. These compounds have been attractive due to their optoelectronic and photovoltaic applications. Defects take remarkable attention since they affect quality of semiconductor devices. In the present paper, deep defect centers in GaSe and Ga2Se3 single crystals grown by Bridgman method were reported from the analyses of thermoluminescence measurements performed in the 350–675 K range. Experimental TL curves of GaSe and Ga2Se3 s...
Magnetically separable rhodium nanoparticles as catalysts for releasing hydrogen from the hydrolysis of ammonia borane
Tonbul, Yalcin; Akbayrak, Serdar; Özkar, Saim (Elsevier BV, 2019-10-01)
Magnetically separable catalysts attract considerable attention in catalysis due to their facile separation from the reaction medium. This propensity is crucial for efficient multiple use of precious noble metal nanoparticles in catalysis. In fact, the isolation of catalysts from the reaction medium by filtration and washing results usually in the loss of huge amount of activity in the subsequent run of catalysis. Although many transition metal nanoparticle catalysts have been reported for the H-2 generatio...
Temperature effects on the structural and optical properties of the TlInSe2xS2(1-x) mixed crystals (x=0.3)
Omar, A.; Qasrawi, A. F.; Hasanlı, Nızamı (2017-11-15)
In this work, we have studied the temperature effects on the recrystallization process and on the energy band gap of the TlInSe(2)xS(2(1 - x)) mixed crystals at the critical composition (x = 0.3) where structural phase transition from tetragonal to monoclinic takes place. Remarkable effect which included permanent recrystallization process, enlargements in the monoclinic crystallite size, decreases in the compressing strain and in the dislocation density as well as in the stacking faults and in the energy b...
Instanton molecules at high temperature - the Georgi-Glashow model and beyond
Kogan, II; Tekin, Bayram; Kovner, A (2001-03-01)
We show that correlators of some local operators in gauge theories are sensitive to the presence of the instantons even at high temperature where the latter are bound into instanton-anti-instanton "molecules". We calculate correlation functions of such operators in the deconfined phase of the 2+1 dimensional Georgi-Glashow model and discuss analogous quantities in the chirally symmetric phase of QCD. We clarify the mechanism by which the instanton-anti-instanton molecules contribute to the anomaly of axial ...
Defect characterization of cTl(4)GaIn(3)Se(2)S(6) layered single crystals by photoluminescence
Hasanlı, Nızamı (2015-10-01)
Photoluminescence (PL) spectra of Tl4GaIn3Se2S6 layered crystals grown by the Bridgman method have been studied in the energy region of 2.02-2.35 eV and in the temperature range of 16-45 K. A broad PL band centered at 2.20 eV was observed at T = 16 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.1 to 149.9 mW cm(-2) range. Radiative transitions from shallow donor level located at 10 meV below the bottom of conduction band to moderately deep acceptor level...
Citation Formats
A. Aydinli and N. Hasanlı, “Defect luminescence in some layered binary chalcogenide semiconductors,” DEFECTS AND DIFFUSION IN SEMICONDUCTORS, pp. 61–69, 2002, Accessed: 00, 2020. [Online]. Available: