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Defect luminescence in some layered binary chalcogenide semiconductors
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Date
2002-01-01
Author
Aydinli, A
Hasanlı, Nızamı
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A number of semiconductors such as GaS, GaSe, GaSSe show layered structure where intralayer bonding is strong and interlayer bonding quite weak. With bandgaps mostly in the visible and the near infrared and high crystal structure anisotropy, such semiconductors offer interesting possibilities for optoelectronic applications. In this review, we will summarize the recent developments on the photoluminescent properties of these materials such as luminescence due to donor-acceptor pair recombination. As these materials are undoped, the observed photoluminescence is attributed mostly to defect states present in these materials.
Subject Keywords
Chalcogenides
,
Optical properties
,
Layered semiconductors
,
Defects
URI
https://hdl.handle.net/11511/43146
Journal
DEFECTS AND DIFFUSION IN SEMICONDUCTORS
DOI
https://doi.org/10.4028/www.scientific.net/ddf.210-212.61
Collections
Department of Physics, Article
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A. Aydinli and N. Hasanlı, “Defect luminescence in some layered binary chalcogenide semiconductors,”
DEFECTS AND DIFFUSION IN SEMICONDUCTORS
, pp. 61–69, 2002, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/43146.