Defect characterization of cTl(4)GaIn(3)Se(2)S(6) layered single crystals by photoluminescence

Date

2015-10-01

Author

Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

200
views

0
downloads

Photoluminescence (PL) spectra of Tl4GaIn3Se2S6 layered crystals grown by the Bridgman method have been studied in the energy region of 2.02-2.35 eV and in the temperature range of 16-45 K. A broad PL band centered at 2.20 eV was observed at T = 16 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.1 to 149.9 mW cm(-2) range. Radiative transitions from shallow donor level located at 10 meV below the bottom of conduction band to moderately deep acceptor level located at 180 meV above the top of the valence band were suggested to be responsible for the observed PL band. An energy level diagram showing transitions in the band gap of the crystal was plotted taking into account the results of present work and previously reported paper on thermally stimulated current measurements carried out below room temperature. Analysis of the transmission and reflection measurements performed in the wavelength range of 400-1030 nm at room temperature revealed the presence of indirect transitions with 2.22 eV band gap energy.

Subject Keywords

Defects levels, Semiconductors, Chalcogenides, Photoluminescence

URI

https://hdl.handle.net/11511/37302

Journal

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

DOI

https://doi.org/10.1016/j.mssp.2015.03.049

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Temperature and excitation intensity tuned photoluminescence in Ga0.75In0.25Se crystals Isik, M.; Guler, I.; Hasanlı, Nızamı (2013-01-01) Photoluminescence (PL) spectra of Ga0.75In0.25Se layered single crystals have been studied in the wavelength range of 580-670 nm and temperature range of 7-59 K. Two PL emission bands centered at 613 nm (2.02 eV, A-band) and 623 nm (1.99 eV, B-band) were revealed at T = 7K. The excitation laser intensity dependence of the emission bands have been studied in the 0.06-1.40 W cm(-2) range. Radiative transitions from shallow donor levels located at E-A = 0.11 and E-B = 0.15 eV below the bottom of conduction ban...
Low-temperature visible photolummescence and optical absorption in Tl2In2Se3S semiconductor Güler, Işıkhan; Hasanlı, Nızamı; Turan, Raşit (2007-05-31) The emission band spectra of undoped T1(2)In(2)Se(3)S layered crystals have been studied in the temperature range of 25-63 K and the wavelength region of 570-700nm. A broad photoluminescence band centered at 633 nm (1.96 eV) was observed at T = 25 K. Variation of emission band has been studied as a function of excitation laser intensity in the 2.7-111.4mWcm(-2) range. Radiative transitions from shallow donor level located at 0.03 eV below the bottom of conduction band to deep acceptor level located at 0.23 ...
Low-temperature visible photoluminescence spectra of TlGaSe2 layered crystal Hasanlı, Nızamı; Aydinli, A; Baten, SMA (2000-02-01) The photoluminescence (PL) spectra of TlGaSe2 layered single crystals were investigated in the 8.5-35 K temperature, 0.2-15.2 W cm(-2) excitation laser intensity, and in the 600-700 nm wavelength range. The PL spectrum has a slightly asymmetric Gaussian lineshape with a peak position located at 1.937 eV (640 nm) at 8.5 K. The PL is quenched with increasing temperature. The blue shift of the PL peak and the sublinear increase of the PL intensity with increasing laser intensity is explained using the inhomoge...
Low-temperature photoluminescence in CuIn5S8 single crystals Hasanlı, Nızamı (2016-06-01) Photoluminescence (PL) spectra of CuIn5S8 single crystals grown by Bridgman method have been studied in the wavelength region of 720-1020 nm and in the temperature range of 10-34 K. A broad PL band centred at 861 nm (1.44 eV) was observed at T = 10 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.5- 60.2 mW cm(-2) range. Radiative transitions from shallow donor level located at 17 meV below the bottom of the conduction band to the acceptor level located at...
Comparative study of low-temperature photoluminescence and thermally stimulated current in quinary Tl4Ga3InSe6S2 layered crystals Hasanlı, Nızamı (2016-04-01) Photoluminescence (PL) and thermally stimulated current (TSC) spectra of Tl4Ga3InSe6S2 layered crystals grown by Bridgman method have been studied in the wavelength region of 560-690 nm and the temperature range of 15-45 K (PL) and in the temperature region of 10-90 K (TSC). A broad PL band centered at 620 nm (2.00 eV) was observed at T=15 K. Variations of emission band has been studied as a function of excitation laser intensity in the 0.7-36.5 mW cm(-2) range. Radiative transitions from donor level locate...

Citation Formats

N. Hasanlı, “Defect characterization of cTl(4)GaIn(3)Se(2)S(6) layered single crystals by photoluminescence,” MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, pp. 8–12, 2015, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/37302.