Determination of deep trapping center parameters in as-grown Tl2Ga2S3Se layered crystals

Date

2009-09-01

Author

YILDIRIM, TACETTİN
Hasanlı, Nızamı

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Thermally stimulated current measurements were carried out on as-grown Tl2Ga2S3Se layered single crystals. The investigations were performed in temperatures ranging from 10 to 320 K with heating rates of 0.6-1.2 K s(-1). The analysis of the data revealed the hole trap level located at 498 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 2.1 x 10(-18) cm(2) for capture cross-section and 2.3 x 10(9) cm(-3) for the concentration. It was concluded that in this center retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. (C) 2009 Elsevier Masson SAS. All rights reserved.

Subject Keywords

General Materials Science, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/38003

Journal

SOLID STATE SCIENCES

DOI

https://doi.org/10.1016/j.solidstatesciences.2009.06.025

Collections

Department of Physics, Article

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Citation Formats

T. YILDIRIM and N. Hasanlı, “Determination of deep trapping center parameters in as-grown Tl2Ga2S3Se layered crystals,” SOLID STATE SCIENCES, pp. 1562–1566, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/38003.