Determination of deep trapping center parameters in as-grown Tl2Ga2S3Se layered crystals

Date

2009-09-01

Author

YILDIRIM, TACETTİN
Hasanlı, Nızamı

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

234
views

0
downloads

Thermally stimulated current measurements were carried out on as-grown Tl2Ga2S3Se layered single crystals. The investigations were performed in temperatures ranging from 10 to 320 K with heating rates of 0.6-1.2 K s(-1). The analysis of the data revealed the hole trap level located at 498 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 2.1 x 10(-18) cm(2) for capture cross-section and 2.3 x 10(9) cm(-3) for the concentration. It was concluded that in this center retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. (C) 2009 Elsevier Masson SAS. All rights reserved.

Subject Keywords

General Materials Science, General Chemistry, Condensed Matter Physics

URI

https://hdl.handle.net/11511/38003

Journal

SOLID STATE SCIENCES

DOI

https://doi.org/10.1016/j.solidstatesciences.2009.06.025

Collections

Department of Physics, Article

Suggestions

OpenMETU
Core

Shallow trapping center parameters in as-grown AgIn5S8 crystals determined by thermally stimulated current measurements YILDIRIM, TACETTİN; Hasanlı, Nızamı (Wiley, 2009-12-01) Thermally stimulated current measurements were carried out on as-grown AgIn5S8 single crystals. The investigations were performed in temperatures ranging from 10 to 70 K with heating rate of 0.2 K/s. The analysis of the data revealed the electron trap level located at 5 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 2.2 x 10(-25) cm(2) for capture cross section and 6.1 x 10(12) cm(-3) f...
Investigation of carrier scattering mechanisms in TIInS2 single crystals by Hall effect measurements Qasrawi, AF; Hasanlı, Nızamı (Wiley, 2004-05-01) TlInS2 single crystals are studied through the conductivity and Hall effect measurements in the temperature regions of 100-400 and 170-400 K, respectively. An anomalous behavior of Hall voltage, which changes sign below 315 K, is interpreted through the existence of deep donor impurity levels that behave as acceptor levels when are empty. The hole and electron mobility are limited by the hole- and electron-phonon short range interactions scattering above and below 315 K, respectively. An energy level of 35 ...
Thermally stimulated current observation of trapping centers and their distribution in as-grown TlGaSeS layered single crystals YILDIRIM, TACETTİN; Hasanlı, Nızamı (Elsevier BV, 2009-11-15) Thermally stimulated current (TSC) measurements were carried out in as-grown TlGaSeS layered single crystals. The investigations were performed in temperatures ranging from 10 to 160 K with heating rate of 0.8 K s(-1). The analysis of the data revealed three electron trap levels at 13, 20 and 50 meV The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The calculation for these traps yielded 3.3 x 10(-24), 1.0 x 10(-24), and 11 x 10(-24)...
Analysis of the Specific Heat in the Supercooled Solid Phase of Liquid Crystals Kilit, Emel; Yurtseven, Hasan Hamit (Informa UK Limited, 2011-01-01) The specific heat Cp is analyzed using the experimental data at various temperatures in the solid phase of cholesteryl myristate according to a power-law formula for the rapidly and slowly cooled solid in the stability limit. We also analyze the temperature dependence of the Cp using the experimental data for the supercooled solid phase of p-azoxyanisole in the stability limit and the stability temperatures are determined for both cholesteryl myristate and p-azoxyanisole.
Evaluation of the radiative recombination mechanism in Si nanocrystals embedded in silica matrix Righini, Marcofabio; Gnoli, Andrea; Razzari, Luca; Serincan, Ugur; Turan, Raşit (American Scientific Publishers, 2008-02-01) We report measurements of the temperature dependence of photoluminescence (PQ life-time and efficiency of Si nanocrystals (Si-Nc) embedded in silica matrix. We use a practical technique based on lock-in acquisition that allows us to simultaneously evaluate, at each emission-energy, intensity and decay-time of the detected signal. Samples are prepared by Silicon-ion implantation in a SiO2 layer followed by thermal annealing. The implantation dose of Si ions ranges between 2 x 10(16) cm(-2) and 2 x 10(17) cm(...

Citation Formats

T. YILDIRIM and N. Hasanlı, “Determination of deep trapping center parameters in as-grown Tl2Ga2S3Se layered crystals,” SOLID STATE SCIENCES, pp. 1562–1566, 2009, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/38003.