Mechanical and optical properties of SiO2 thin films deposited on glass

Date

2018-09-01

Author

Simurka, Lukas
Ctvrtlik, Radim
Tomastik, Jan
Bektaş, Gence
Svoboda, Jan
Bange, Klaus

Metadata

Show full item record

This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.

Item Usage Stats

458
views

0
downloads

The optical and mechanical properties of amorphous SiO2 films deposited on soda-lime silicate float glass by reactive RF magnetron sputtering at room temperature were investigated in dependence of the process pressure. The densities of the films are strongly influenced by the process pressure and vary between 2.38 and 1.91 g cm(-3) as the pressure changes from 0.27 to 1.33 Pa. The refractive indices of the films shift between 1.52 and 1.37, while the residual compressive stresses in the deposited films vary in the range from 440 to 1 MPa. Hardness and reduced elastic modulus values follow the same trend and decline with the increase of process pressure from 8.5 to 2.2 GPa and from 73.7 to 30.9 GPa, respectively. The abrasive wear resistance decreases with the density of the films.

Subject Keywords

SiO2 films, Glass, Mechanical properties, Refractive index, Residual stress

URI

https://hdl.handle.net/11511/63007

Journal

CHEMICAL PAPERS

DOI

https://doi.org/10.1007/s11696-018-0420-z

Collections

Center for Solar Energy Research and Applications (GÜNAM), Article

Suggestions

OpenMETU
Core

Structural and electrical analysis of poly-Ge films fabricated by e-beam evaporation for optoelectronic applications Kabacelik, Ismail; KULAKCI, MUSTAFA; Turan, Raşit (2016-12-01) We have investigated the relationship between structural and electrical properties of Ge thin films deposited on single crystal silicon (100) substrates by electron beam evaporation at room temperature. Post-thermal annealing was applied to obtain poly-crystalline Ge thin films. The structural effects of the annealing temperature and annealing time on the crystallization of Ge films were analyzed using Raman and X-ray diffraction measurements. Raman and X-ray diffraction spectra revealed a structural evolut...
Structural and optical properties of thermally evaporated Ga-In-Se thin films IŞIK, MEHMET; Güllü, Hasan Hüseyin (2014-05-30) In this paper, structural and optical properties of Ga-In-Se (GIS) thin films deposited by thermal evaporation technique have been investigated. The effect of annealing was also studied for samples annealed at temperatures between 300 degrees C and 500 degrees C. X-ray diffraction, energy dispersive X-ray analysis and scanning electron microscopy have been used for structural characterization. It was reported that increase of annealing temperature results with better crystallization and chemical composition...
Electric and photoelectric properties of n-AgInSe2/p-Si heterojunction diode fabricated by successive layer deposition KALELİ, Murat; ALDEMİR, Durmuş Ali; Parlak, Mehmet (2017-09-01) Thin films of AgInSe2 ternary compound were grown by a successive process in which the production of AIS-Ag-AIS-Ag-AIS-Ag layers was deposited by e-beam and thermal evaporation on p-type silicon substrates. The formation of a stoichiometric AgInSe2 thin film with 75.2% crystallinity was achieved and the film had homogenous and smooth surfaces. n-AgInSe2/p-Si structure has exhibited good rectifying behavior with rectification ratio of 3.99 x 10(3). The ideality factor and saturation current were found to be ...
Absorption edge and optical constants of Tl2Ga2S3Se crystals from reflection and transmission, and ellipsometric measurements Isik, M.; Hasanlı, Nızamı (2012-06-15) The optical properties of Tl2Ga2S3Se layered crystalline semiconductors were investigated from transmission, reflection and ellipsometric measurements. The experimental results of the room temperature transmission and reflection measurements performed in the wavelength range of 400-1100 nm showed the presence of both indirect and direct transitions in the band structure of the crystals with 2.38 and 2.62 eV band gap energies.
Mechanical and microstructural evaluations of hot formed titanium sheets by electrical resistance heating process Ozturk, Fahrettin; Ece, Remzi Ecmel; Polat, Naki; Koksal, Arif; Evis, Zafer; Polat, Aytekin (Elsevier BV, 2013-08-20) In this study, effect of temperature in the electrical resistance heating process on mechanical properties and microstructures of commercially pure titanium grade 2 (CP2) and Ti-6Al-4V (T64) alloy sheets was investigated. Sheets were successfully heated by the electric resistance heating process, and their mechanical properties and microstructures were evaluated. Ductilities of both materials were increased significantly after 400 degrees C. Results indicate that no significant change was observed in grain ...

Citation Formats

L. Simurka, R. Ctvrtlik, J. Tomastik, G. Bektaş, J. Svoboda, and K. Bange, “Mechanical and optical properties of SiO2 thin films deposited on glass,” CHEMICAL PAPERS, pp. 2143–2151, 2018, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/63007.