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SHALLOW IMPURITIES IN HETEROJUNCTIONS
Date
1992-02-01
Author
ELKAWNI, MI
Tomak, Mehmet
Metadata
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Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License
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The shallow impurity states in Si/SiO2 and GaAs/Ga1-xAlxAs heterojunctions are studied variationally using an improved Fang-Howard trial wave function originally proposed for the Si/SiO2 system.
Subject Keywords
Heterojunctions
,
Semiconductors
,
Shallow impurities
URI
https://hdl.handle.net/11511/44291
Journal
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
DOI
https://doi.org/10.1016/0022-3697(92)90060-q
Collections
Department of Physics, Article
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M. ELKAWNI and M. Tomak, “SHALLOW IMPURITIES IN HETEROJUNCTIONS,”
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
, pp. 305–308, 1992, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/44291.