SHALLOW IMPURITIES IN HETEROJUNCTIONS

Date

1992-02-01

Author

ELKAWNI, MI
Tomak, Mehmet

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The shallow impurity states in Si/SiO2 and GaAs/Ga1-xAlxAs heterojunctions are studied variationally using an improved Fang-Howard trial wave function originally proposed for the Si/SiO2 system.

Subject Keywords

Heterojunctions, Semiconductors, Shallow impurities

URI

https://hdl.handle.net/11511/44291

Journal

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

DOI

https://doi.org/10.1016/0022-3697(92)90060-q

Collections

Department of Physics, Article

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Citation Formats

M. ELKAWNI and M. Tomak, “SHALLOW IMPURITIES IN HETEROJUNCTIONS,” JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, pp. 305–308, 1992, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/44291.