SHALLOW IMPURITIES IN HETEROJUNCTIONS

1992-02-01
ELKAWNI, MI
Tomak, Mehmet
The shallow impurity states in Si/SiO2 and GaAs/Ga1-xAlxAs heterojunctions are studied variationally using an improved Fang-Howard trial wave function originally proposed for the Si/SiO2 system.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS

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Citation Formats
M. ELKAWNI and M. Tomak, “SHALLOW IMPURITIES IN HETEROJUNCTIONS,” JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, pp. 305–308, 1992, Accessed: 00, 2020. [Online]. Available: https://hdl.handle.net/11511/44291.